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Micron Technology

MT29F1G08ABAEAH4-AATX:E - 1Gb SLC NAND Flash, x8 | Micron

N.º da peça: MT29F1G08ABAEAH4-AATX:E ✓ Ativo
Em estoque Enviado em 1 a 3 dias úteis
2.7 V to 3.6 V Vdss 63-ball VFBGA, 9 mm x 11 mm Package SLC NAND Flash (non-volatile) Memory
A partir de $1.22 USD / unidade
MOQ: 1 |
Preço atualizado: 2026-10-13
Preços por volume
Qtd. Preço unitário Total
1 $2.18 $2,18
10 $1.95 $19,50
100 $1.62 $162,00
500 $1.38 $690,00
1.000 $1.22 $1.220,00
ℹ️ Todos os preços estão em USD

MT29F1G08ABAEAH4-AATX:E Visão geral

The Micron MT29F1G08ABAEAH4-AATX:E is a 1 Gbit (128 M x 8) single-level cell (SLC) NAND Flash memory with a parallel asynchronous interface, housed in a 63-ball 9 mm x 11 mm VFBGA package. According to Micron product literature, the device operates from 2.7 V to 3.6 V supply, sustains 100,000 program/erase cycles per block, and provides typical page-program times around 200 us with block-erase around 700 us. A 1-bit ECC requirement is specified per 528 bytes of data for reliable operation across the rated endurance.

An SLC NAND Flash is a non-volatile memory that stores one bit per cell, giving higher endurance, faster write throughput, and lower bit error rates than MLC/TLC NAND at the cost of lower density per die. SLC NAND belongs to the broader class of non-volatile memory (NVM) -> Flash memory -> NAND Flash -> raw NAND hierarchy, typically paired with an external controller or host MCU that performs bad-block management, wear leveling, and ECC. SLC parts are favored over MLC NAND in industrial and automotive designs where data retention and write endurance matter more than cost-per-gigabit.

Key features of the MT29F1G08ABAEAH4-AATX:E include read-buffer mode for cache-style reads, an OTP region with hardware and software write protection, a hardware WP# pin, a hardware RESET# pin, copy-back program operation, and an operating temperature range of -40C to +85C (industrial grade). The parallel interface uses 8 I/O lines and is the industry's standard x8 async NAND command set (ONFI-compatible legacy commands). The 63-ball VFBGA package, marked with FBGA code RW182, supports compact PCB layouts below 100 mm^2 including the keep-out.

Internally, the die is organized as 1024 blocks of 64 pages, with 2112 bytes per page (2048 data + 64 spare). Page reads complete in 25 us typical, supporting a sustained read bandwidth exceeding 60 MB/s in burst mode when paired with a controller. The integrated static and dynamic wear-leveling logic is left to the host controller, and ONFI parameter pages can be read from the device for software identification.

Typical applications for the MT29F1G08ABAEAH4-AATX:E include industrial data loggers, factory automation controllers, point-of-sale terminals, networking equipment (boot + data storage), automotive infotainment subsystems, IoT gateways, and firmware storage for FPGAs and SoCs that need reliable, repeatable write cycles. In boot-and-storage designs it commonly stores the bootloader, calibration tables, and system logs.

Designers should note that the absence of an on-die controller means the host MCU/SoC must run an FTL or a simple bad-block table. Decoupling should follow the JEDEC JESD8C 3.3 V LVCMOS guideline for HBM/ESD tolerance. Industrial temperature grade -40C to +85C is suitable for outdoor enclosures and most factory-floor deployments.

This page consolidates Micron datasheet specs, real-time distributor pricing, and pin-compatible SLC NAND alternatives in the 63-VFBGA footprint - information often scattered across disti websites and individual datasheets.

Alternativas drop-in para MT29F1G08ABAEAH4-AATX:E — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.

Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:

MT29F1G08ABAEAH4-AATX:E TR

✅ Drop-In
📦 63-VFBGA (9x11)
Same die/package, supplied on 7-inch tape and reel for higher-volume assembly

📋 Alternativa de referência (fora do catálogo)

MT29F1G08ABAEAH4-ITX:E

✅ Drop-In
📦 63-VFBGA (9x11)
Same die and footprint; I-timing/revision variant with identical 2.7V-3.6V supply and 100K P/E

📋 Alternativa de referência (fora do catálogo)

MT29F1G08ABAEAH4-ITX:E TR

✅ Drop-In
📦 63-VFBGA (9x11)
Same I-revision die, tape and reel packaging; drop-in equivalent to AATX:E

📋 Alternativa de referência (fora do catálogo)

MT29F2G08ABAEAH4-AATX:E

✅ Drop-In
📦 63-VFBGA (9x11)
Doubled density to 2 Gbit (256Mx8) in the same ball-out, identical 2.7V-3.6V supply, -40C to +85C

📋 Alternativa de referência (fora do catálogo)

MT29F1G08ABAEAH4-AITX:E

✅ Drop-In
📦 63-VFBGA (9x11)
Same 1 Gbit x 8 die, AITX variant listing on distributor pages

📋 Alternativa de referência (fora do catálogo)

MT29F1G08ABAEAH4-AATX:E Classificações máximas e características elétricas

Tipo de memória SLC NAND Flash (non-volatile)
Density 1 Gbit (128 MB)
Organização da memória 128 M x 8
Interface Parallel asynchronous (x8)
Supply Voltage (VCC) 2.7 V to 3.6 V
Page Size 2112 bytes (2048 + 64 spare)
Block Size 64 pages (132 KB)
Block Count 1024
Endurance (P/E Cycles) 100,000 per block
Page Program Time (typical) 200 us
Block Erase Time (typical) 700 us
Page Read Time (typical) 25 us
ECC Requirement 1-bit ECC per 528 bytes
Temperatura de operação -40C to +85C (industrial)
Encapsulamento 63-ball VFBGA, 9 mm x 11 mm
FBGA Code RW182
Special Features Read buffer, OTP area, hardware WP, hardware RESET, copy-back
Tipo de montagem Surface Mount
Status RoHS Compliant

Guia de Configuração de Pinos do MT29F1G08ABAEAH4-AATX:E 63-ball vfbga, 9 mm x 11 mm

Configuração de pinos para MT29F1G08ABAEAH4-AATX:E (pacote 63-ball vfbga, 9 mm x 11 mm). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.

Diagrama de pinagem do pacote 63-ball vfbga, 9 mm x 11 mm para MT29F1G08ABAEAH4-AATX:E

Nenhum dado detalhado de pinagem disponível para MT29F1G08ABAEAH4-AATX:E.

Consulte a ficha técnica para a configuração completa dos pinos.

Aplicações típicas

MT29F1G08ABAEAH4-AATX:E é adequado para 7 aplicaçãos: Industrial Data Logger Storage, Bootloader and Firmware Storage for SoC/FPGA Designs, Automotive Infotainment Data Partition, Networking Equipment and Router Storage, Point-of-Sale (POS) Terminal Storage, Edge IoT Gateway and Sensor Aggregator, Test and Measurement Instrument Storage.

🏭

Industrial Data Logger Storage

The MT29F1G08ABAEAH4-AATX:E serves as the primary non-volatile storage bank in industrial data loggers that capture sensor, vibration, or process telemetry. Its 100,000 P/E endurance per block allows continuous high-rate logging across years of deployment without flash wear-out, and the 1-bit ECC requirement per 528 bytes is easily handled by even low-cost industrial MCUs. The 2.7V to 3.6V supply aligns with 3.3V rail designs common in factory-floor equipment, and the 63-ball VFBGA footprint keeps the storage area below 100 mm^2. Compared with MLC NAND the 200 us page-program time reduces write latency when bursts of telemetry must be committed under real-time constraints, and the -40C to +85C operating range covers outdoor enclosures and unheated cabinets.

🧩

Bootloader and Firmware Storage for SoC/FPGA Designs

The MT29F1G08ABAEAH4-AATX:E provides reliable 128 MB non-volatile storage for bootloader images, golden firmware, and calibration tables in SoC and FPGA designs. Its parallel x8 asynchronous NAND interface pairs naturally with most microcontroller external memory controllers (FSMC on STM32, EBI on NXP Kinetis, x8 host on Zynq), and the OTP area combined with the hardware WP# pin lets the firmware implement a secure boot chain that prevents rollback to older images. The 25 us typical page-read time supports sub-second cold-boot times for 1 MB firmware images, while the 100K P/E endurance tolerates frequent OTA updates during development and field provisioning. Operating from 2.7V to 3.6V and -40C to +85C ensures compatibility with industrial SBC and FPGA board voltage rails.

🚗

Automotive Infotainment Data Partition

The MT29F1G08ABAEAH4-AATX:E is used in automotive infotainment head units and telematics control units (TCUs) to store map tiles, audio buffering, and diagnostic logs. Although the part itself does not carry an automotive AEC-Q100 grade, designers typically pair it with system-level qualification and leverage its industrial -40C to +85C specification for non-safety-critical infotainment partitions. The 1 Gbit capacity fits a region for offline maps, voice prompts, and BLT (boot, log, trace) buffers, while the parallel x8 interface connects directly to the application processor external memory interface. The 100,000 P/E endurance accommodates frequent log writes from CAN/LIN capture, and the small 63-VFBGA 9x11 mm package suits space-constrained head-unit PCBs.

🌐

Networking Equipment and Router Storage

The MT29F1G08ABAEAH4-AATX:E provides 128 MB of non-volatile storage in enterprise and industrial routers, firewalls, and switches where it holds the routing firmware, VPN certificates, configuration tables, and log archives. Its 3.3V LVCMOS compatible I/O simplifies connection to network SoCs that drive x8 NAND, and the 1-bit ECC requirement is trivial for the embedded firmware to handle. The 63-ball VFBGA footprint enables compact router boards where height and PCB real estate are at a premium, and the 100K P/E endurance easily tolerates daily configuration rollbacks during operational lifecycles. Compared with raw NOR flash, the SLC NAND delivers 100x the capacity at comparable per-bit cost.

💡

Point-of-Sale (POS) Terminal Storage

The MT29F1G08ABAEAH4-AATX:E serves as the local data partition in point-of-sale terminals that must record transactions offline, queue credit/debit authorizations, and store firmware for kiosk-mode operations. Its 1 Gbit (128 MB) capacity is sufficient for transaction queues, signature buffers, and Linux root filesystems in compact POS form factors, and the 200 us typical page-program time captures each transaction record quickly to prevent queue overflow during high-volume sales periods. The hardware WP# and OTP area help protect cryptographic key material and tamper-evident logs, while the 1-bit ECC per 528 bytes minimizes soft-error risk in environments with intermittent ESD exposure. The package's 9x11 mm VFBGA footprint fits beneath the main display board in slim POS designs.

🧩

Edge IoT Gateway and Sensor Aggregator

The MT29F1G08ABAEAH4-AATX:E provides non-volatile buffering for edge IoT gateways that aggregate data from multiple industrial sensor networks (Modbus, CAN, 4-20 mA) before forwarding to cloud infrastructure. With 100,000 P/E cycles per block the device tolerates days of continuous buffered writes without wear-out, and the 128 MB capacity accommodates circular log buffers plus a Linux JFFS2/UBI root filesystem. The device's -40C to +85C operating temperature allows installation in factory cabinets, outdoor enclosures, and refrigerated warehouses where edge gateways must operate reliably. The asynchronous parallel x8 interface simplifies integration with low-power industrial MCUs that lack the clocking requirements of QSPI or eMMC.

🔧

Test and Measurement Instrument Storage

The MT29F1G08ABAEAH4-AATX:E is used inside test and measurement instruments (oscilloscopes, protocol analyzers, RF recorders) as the bulk storage for sampled waveforms, calibration certificates, and instrument firmware. The 200 us page-program time lets sweep captures be written quickly between successive acquisitions, while the 25 us page-read time keeps firmware-launch time minimal. The 100K P/E endurance handles repeated write of large log files across years of lab use, and the industrial -40C to +85C temperature range ensures operation in non-climate-controlled production environments. The 63-ball VFBGA 9x11 mm package packs 128 MB into a footprint that fits on the main instrument PCB next to ADC and FPGA devices.

Resumo dos produtos recomendados

STM32F407VGT6 STMicroelectronics Usado em: Industrial Data Logger Storage MT29F1G08ABAEAH4-ITX:E Drop-in same-density alternative for second-source sourcing Usado em: Industrial Data Logger Storage, Automotive Infotainment Data Partition, Point-of-Sale (POS) Terminal Storage, Test and Measurement Instrument Storage XC7A35T-1FTG256I Artix-7 FPGA that boots configuration from parallel NAND Usado em: Bootloader and Firmware Storage for SoC/FPGA Designs MT29F2G08ABAEAH4-AATX:E 2 Gbit upgrade path in same package for larger firmware Usado em: Bootloader and Firmware Storage for SoC/FPGA Designs, Networking Equipment and Router Storage, Edge IoT Gateway and Sensor Aggregator i.MX6ULL NXP applications processor interfacing with parallel NAND Usado em: Automotive Infotainment Data Partition BCM59111B0KFSBG Broadcom network SoC pairing with parallel NAND storage Usado em: Networking Equipment and Router Storage MAX32555 Secure microcontroller for POS authentication and storage control Usado em: Point-of-Sale (POS) Terminal Storage ESP32-S3 Industrial wireless MCU interfacing to external parallel NAND Usado em: Edge IoT Gateway and Sensor Aggregator XC7A100T-2FGG676I Usado em: Test and Measurement Instrument Storage
What is the density and organization of MT29F1G08ABAEAH4-AATX:E?
The MT29F1G08ABAEAH4-AATX:E is a 1 Gbit SLC NAND Flash organized as 128 Mbytes x 8 bits in a parallel x8 interface. According to Micron product literature, the internal array is 1024 blocks of 64 pages, each page 2112 bytes (2048 + 64 spare), which matches the standard ONFI asynchronous NAND command set used across industrial designs.
What is the operating voltage range of MT29F1G08ABAEAH4-AATX:E?
The MT29F1G08ABAEAH4-AATX:E operates from 2.7 V to 3.6 V VCC, making it compatible with the 3.3 V LVCMOS rails common on industrial MCU and SoC platforms. The device is 3.3 V-only - it does not support 1.8 V interfaces. Always provide at least one 0.1 uF and one 1 uF decoupling capacitor adjacent to VCC balls to stay within JEDEC JESD8C noise tolerances.
What is the endurance rating of MT29F1G08ABAEAH4-AATX:E?
The MT29F1G08ABAEAH4-AATX:E is rated for 100,000 program/erase cycles per block. SLC NAND inherently delivers higher endurance than MLC or TLC, and combined with a wear-leveling algorithm in the host controller it can support data-logger and firmware-storage workloads in industrial applications for the lifetime of the product.
What package does MT29F1G08ABAEAH4-AATX:E use?
The MT29F1G08ABAEAH4-AATX:E ships in a 63-ball VFBGA package measuring 9 mm x 11 mm, FBGA code RW182. Pin/ball assignments follow the standard ONFI x8 asynchronous NAND ball-out, so most 63-ball VFBGA SLC NAND alternatives in the same package family are drop-in compatible.
Where can I buy MT29F1G08ABAEAH4-AATX:E online?
You can purchase the MT29F1G08ABAEAH4-AATX:E from authorized distributors including DigiKey, Mouser, LCSC, JLCPCB, and Newark. As of 2026-10-13 the pricing observed on LCSC starts at approximately $1.23 at higher quantities. Check each distributor for tape-and-reel variants (TR suffix) and current stock before ordering.
What is the price of MT29F1G08ABAEAH4-AATX:E?
Indicative pricing as of 2026-10-13 is around $1.23 to $2.18 per piece depending on quantity break. Distributor pages observed show approximately $2.18 at qty 1 on LCSC and lower per-unit pricing at 100 or 500 pieces. Tape-and-reel (TR) and bulk pricing are typically 10 to 30 percent lower per unit than cut-tape pricing.
What is the lead time for MT29F1G08ABAEAH4-AATX:E?
Lead time on distributor pages as of 2026-10-13 generally shows the part in stock or with same-day dispatch at LCSC, Mouser, and DigiKey. Industrial-grade SLC NAND often has shorter lead times than equivalent MLC or TLC parts because the demand-and-supply cycle is more predictable. Always confirm with the distributor on the order day.
Is MT29F1G08ABAEAH4-AATX:E in stock?
The MT29F1G08ABAEAH4-AATX:E was observed as in stock at LCSC, JLCPCB, Mouser, and DigiKey on 2026-10-13 across multiple quantity breaks. Note that the part is also listed by some distributors under its variants with :E or :E TR suffixes, both of which are functional equivalents of the same die.
What is the difference between MT29F1G08ABAEAH4-AATX:E and MT29F1G08ABAEAH4-ITX:E?
The MT29F1G08ABAEAH4-AATX:E and MT29F1G08ABAEAH4-ITX:E share the same 1 Gb x 8 SLC NAND die and the same 63-ball VFBGA footprint. The two part numbers differ in their internal die-revision letter (A vs I revision); the -AATX suffix denotes the current revision at the time of this listing, while -ITX is an older timing/revision variant. Both are drop-in replacements in most designs.
What is the best drop-in replacement for MT29F1G08ABAEAH4-AATX:E?
The strongest drop-in equivalents are same-Micron-family variants such as MT29F1G08ABAEAH4-ITX:E and MT29F1G08ABAEAH4-AATX:E TR, which share the same 63-VFBGA 9x11 mm package, x8 interface, and 1 Gbit density. Cross-brand replacements from Samsung, Toshiba/Kioxia, and SK Hynix exist in similar 63-ball VFBGA packages but typically carry different command-set timings and should be validated against the host controller before redesigning.
Where can I download the MT29F1G08ABAEAH4-AATX:E datasheet?
The official Micron product page for MT29F1G08ABAEAH4-AATX-E offers a downloadable PDF datasheet along with ONFI specifications and mechanical drawings at the part-detail URL. As of the last verification on 2026-10-13 the datasheet link at micron.com is the authoritative source; distributor pages mirror the same PDF.
What is the pinout of MT29F1G08ABAEAH4-AATX:E?
The MT29F1G08ABAEAH4-AATX:E uses a 63-ball VFBGA ball-out standardized across Micron's 1 Gb x 8 async SLC NAND family. The full ball map (DQ0-7, CE#, RE#, WE#, ALE, CLE, WP#, R/B#, VCC, VSS) is documented in the official Micron datasheet. Designers should review the datasheet ball map directly because exact ball letters depend on package orientation A1.
MT29F1G08ABAEAH4-AATX:E vs MT29F2G08ABAEAH4-AATX:E - which is better for high-density storage?
The MT29F2G08ABAEAH4-AATX:E doubles density to 2 Gbit in the same 63-VFBGA pinout, while the MT29F1G08ABAEAH4-AATX:E is the 1 Gbit predecessor. For new designs targeting higher capacity, MT29F2G08ABAEAH4-AATX:E is preferred where the host controller supports higher block counts; otherwise the MT29F1G08ABAEAH4-AATX:E is the cost-optimized choice and is the verified drop-in reference.
When should I choose MT29F1G08ABAEAH4-AATX:E over an MLC NAND?
Choose MT29F1G08ABAEAH4-AATX:E for designs requiring high write endurance (100K P/E), fast 200 us page-program times, low BER, and industrial -40C to +85C operating range. MLC NAND offers higher density at lower cost but typically only 3K to 10K P/E cycles and is slower per program cycle. SLC wins when reliability, predictable latency, and long retention matter more than cost per gigabit.
Is MT29F1G08ABAEAH4-AATX:E suitable for industrial IoT gateways?
Yes, the MT29F1G08ABAEAH4-AATX:E is suitable for industrial IoT gateways because it offers 100K P/E endurance, -40C to +85C industrial operating range, 1-bit ECC for low BER, and the parallel x8 interface that pairs naturally with low-power industrial MCUs. Its OTP area and hardware WP# also support secure firmware storage and field-update protection.

Dados de referência de engenharia para MT29F1G08ABAEAH4-AATX:E — comparação, orientação de projeto e informações de conformidade.

Guia de seleção

Choose MT29F1G08ABAEAH4-AATX:E for industrial-grade 128 MB parallel NAND storage where 100K P/E endurance, -40C to +85C temperature range, and a compact 63-VFBGA footprint are required. Drop in MT29F1G08ABAEAH4-AATX:E TR for high-volume tape-and-reel assembly, or select MT29F1G08ABAEAH4-ITX:E / -ITX:E TR for legacy timing revision equivalence. If you need higher capacity without PCB redesign, upgrade to MT29F2G08ABAEAH4-AATX:E (2 Gbit) in the same package. For automotive infotainment systems or designs where second-source resilience matters most, the Micron 63-VFBGA family offers all variants in one ball-out - prefer the ITX variant for revisions where the controller's NAND timing was locked in early.

Comparação com alternativas

Parâmetro Este produto MT29F1G08ABAEAH4-AATX:E TR MT29F1G08ABAEAH4-ITX:E MT29F1G08ABAEAH4-ITX:E TR MT29F2G08ABAEAH4-AATX:E MT29F1G08ABAEAH4-AITX:E
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Package 63-VFBGA (9x11) 63-VFBGA (9x11) - same 63-VFBGA (9x11) - same 63-VFBGA (9x11) - same 63-VFBGA (9x11) - same 63-VFBGA (9x11) - same
Density 1 Gbit (128 MB) 1 Gbit (same) 1 Gbit (same) 1 Gbit (same) 2 Gbit (2x) 1 Gbit (same)
Organization 128 M x 8 128 M x 8 128 M x 8 128 M x 8 256 M x 8 128 M x 8
Interface Parallel x8 async Parallel x8 async Parallel x8 async Parallel x8 async Parallel x8 async Parallel x8 async
Supply Voltage 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V
Endurance (P/E Cycles) 100,000 100,000 100,000 100,000 100,000 100,000
Operating Temperature -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C
ECCN / Sub-class 3A991.b.1.a 3A991.b.1.a 3A991.b.1.a 3A991.b.1.a 3A991.b.1.a 3A991.b.1.a

Principais diferenciais

  • Industrial -40C to +85C operating range (vs Commercial-grade 0C to +70C SLC NAND parts)
  • Drop-in 2 Gbit density upgrade in same package (vs MT29F1G08ABAEAH4-AATX:E base part vs MT29F2G08ABAEAH4-AATX:E 2 Gbit upgrade)
  • 100,000 P/E endurance vs MLC NAND typically 3K-10K (vs Equivalent density MLC/TLC raw NAND parts)

Notas de projeto

The MT29F1G08ABAEAH4-AATX:E does not contain an on-die controller - the host MCU/SoC must implement bad-block management (BBM), wear leveling, and a Flash Translation Layer (FTL) or simple static mapping. Skipping this step causes premature blocks to be reused and silent data corruption. Pair the NAND with a controller that implements JEDEC ONFI-compliant reset, read ID, page read, page program, and block erase command sequences.

Place at least one 0.1 uF X7R ceramic capacitor adjacent to every VCC ball and one 1 uF tantalum or ceramic bulk capacitor near the package. Route the 8-bit DQ bus with matched trace lengths (mismatch under 50 mil) to meet the 25 ns typical tRC timing budget. Keep the WP#, R/B#, and CE# traces short, and provide a 0 ohm jumper to lift the WP# signal to VCC during firmware development.

During a 700 us block-erase or 200 us page-program operation the device draws brief inrush currents up to 30 mA peak across VCC. Ensure your regulator can supply at least 100 mA peak on the 3.3V rail, with 1 ms of holdup margin. A ferrite bead between the regulator and the NAND helps isolate inrush noise from the host MCU power domain.

Informações de conformidade

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Sem chumbo
Yes
Sem halogênios
Unknown
Minerais de conflito
Compliant

RoHS compliant per Micron product page. ECCN 3A991.b.1.a as observed on distributor listings. The part is industrial-grade -40C to +85C but is not AEC-Q100 qualified; choose AEC-Q100 qualified SLC NAND variants for safety-critical automotive applications.

Dados verificados em: 2026-10-13 — dados verificados e curados pela equipe de engenharia de componentes da XAIPART

Buscas relacionadas

MT29F1G08ABAEAH4-AATX:E MT29F1G08ABAEAH4-AATX:E datasheet Micron 1 Gbit SLC NAND flash 1 Gbit x8 parallel NAND VFBGA 63-VFBGA NAND flash 9x11 mm SLC NAND for industrial data logger MT29F1G08ABAEAH4-AATX:E vs MT29F1G08ABAEAH4-ITX:E MT29F1G08ABAEAH4-AATX:E TR buy MT29F1G08ABAEAH4-AATX:E price what is the endurance of MT29F1G08ABAEAH4-AATX:E Micron 100K P/E NAND for firmware storage MT29F1G08ABAEAH4-AATX:E drop-in replacement

Componentes & termos relacionados

Micron Technology MT29F1G08ABAEAH4-AATX:E MT29F1G08ABAEAH4-ITX:E MT29F1G08ABAEAH4-AATX:E TR MT29F1G08ABAEAH4-ITX:E TR MT29F2G08ABAEAH4-AATX:E MT29F1G08ABAEAH4-AITX:E SLC NAND SLC MLC TLC NAND Flash non-volatile memory ONFI parallel asynchronous NAND VFBGA 63-VFBGA industrial-grade page program block erase wear leveling bad-block management JEDEC ECC RoHS AEC-Q100 industrial data logger firmware storage FPGA configuration storage
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