STMicroelectronics

STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics

N.º da peça: STBV45 ✓ Ativo
Em estoque Enviado em 1 a 3 dias úteis
400 V Vdss 750 mA Id TO-92-3 (through-hole) Package
A partir de $0.31 USD / unidade
MOQ: 1 |
Preço atualizado: 2026-10-04
Preços por volume
Qtd. Preço unitário Total
1 $0.78 $0,78
10 $0.66 $6,60
100 $0.49 $49,00
500 $0.38 $190,00
1.000 $0.31 $310,00
ℹ️ Todos os preços estão em USD

STBV45 Visão geral

The STMicroelectronics STBV45 is a high-voltage, fast-switching NPN bipolar junction transistor rated at 400 V VCEO/VCBO, 750 mA collector current, and 950 mW power dissipation, housed in a TO-92-3 through-hole package. It uses high-voltage multi-epitaxial planar technology to deliver high switching speeds while maintaining high voltage capability, and employs a cellular emitter structure with planar edge termination to enhance switching speed and widen the reverse-biased safe operating area (RBSOA).

A BJT (bipolar junction transistor) is a three-terminal semiconductor device that uses a small base current to control a much larger collector current, enabling amplification and high-speed switching. The NPN variant conducts when the base is pulled above the emitter, making it the natural choice for low-side switching in positive-rail circuits. Within the broader taxonomy, BJTs sit alongside MOSFETs and IGBTs in the discrete-semiconductor family, with BJTs typically preferred where cost, saturation behavior, or ruggedness in fault conditions outweigh the need for ultra-low gate drive power.

Key features of the STBV45 include a minimum DC current gain (hFE) of 8 at IC = 250 mA, low spread of dynamic parameters for predictable switching, and minimum lot-to-lot variation for reliable high-volume manufacturing. The TO-92-3 package offers three through-hole leads (collector, base, emitter) suited for hand-soldered prototyping and low-cost PCB designs. The 950 mW power dissipation rating requires careful thermal management when operating near maximum collector current.

From a switching perspective, the STBV45 is designed for compact fluorescent lamp (CFL) ballasts and SMPS battery-charger primary-side switching where high-voltage breakdown and fast turn-off are required simultaneously. The cellular emitter layout keeps storage and fall times short, reducing switching losses at elevated frequencies. Designers typically operate this transistor at VCEO derated to roughly 60% of his design limit, and pair it with a base-drive network sized to saturate the device at the desired collector current.

Typical applications include compact fluorescent lamps (CFLs), switching-mode power supplies (SMPS) for battery chargers, and high-voltage electronic lighting ballasts. The wide low-voltage footprint and robust RBSOA make it a common choice for cost-sensitive offline switching converters. When designing with the STBV45, ensure the base-drive resistor is sized to provide sufficient base current at minimum hFE, and confirm that the switching frequency stays within the device's safe operating area to avoid second-breakdown failures.

Alternativas drop-in para STBV45 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.

Variantes desta série

Modelos da mesma série compatíveis como drop-in com STBV45 (mesmo formato e footprint) — diferindo em Continuous Collector Current (IC), Mounting Type, Package, Technology.

STMicroelectronics
Continuous Collector Current (IC): 0.75 A
Mounting Type: Through-Hole (Ammopack tape)
Package: TO-92AP (Ammopack, radial leads)
Comparar com STBV45 →

Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:

STBV45D

✅ Drop-In
📦 TO-92-3
STMicroelectronics same-family variant, same 400V/750mA ratings, TO-92-3 footprint

📋 Alternativa de referência (fora do catálogo)

MPSA44

✅ Drop-In
📦 TO-92-3
IC 300 mA vs 750 mA (-60%); 400 V VCEO matches; pinout E-B-C may vary by manufacturer lot

📋 Alternativa de referência (fora do catálogo)

MPSA42

✅ Drop-In
📦 TO-92-3
IC 500 mA vs 750 mA (-33%); 300 V VCEO vs 400 V (-25%); pin-compatible TO-92

📋 Alternativa de referência (fora do catálogo)

2N6517

✅ Drop-In
📦 TO-92-3
VCEO 350 V vs 400 V (-12.5%); IC 500 mA vs 750 mA (-33%); TO-92 footprint compatible

📋 Alternativa de referência (fora do catálogo)

STBV45 Classificações máximas e características elétricas

Tipo de transistor NPN Bipolar Junction Transistor (BJT)
Tensão coletor-base (Vcbo) 400 V
Tensão coletor-emissor (Vceo) 400 V
Continuous Collector Current (IC) 750 mA
Power Dissipation (Pd) 950 mW
Encapsulamento TO-92-3 (through-hole)
Pinout Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard)
Tipo de montagem Through Hole
Technology Multi-epitaxial planar with cellular emitter structure

Configuração de pinos do STBV45

TO-92 Package Pinout Diagram TO-92 3-pin inline, JEDEC. Flat side = pin 1. 1 2 3 TO-92
Pino 1 Emitter — Emitter terminal (standard TO-92 E-B-C convention with flat face toward observer)
Pino 2 Collector — Collector terminal (high-voltage, up to 400 V)
Pino 3 Base — Base terminal (control input)

Área de Operação Segura (DC)

Operação contínua em CC

Aplicações típicas

STBV45 é adequado para 6 aplicaçãos: Compact Fluorescent Lamp (CFL) Ballasts, SMPS Battery Charger Primary-Side Switch, Electronic Lighting Ballasts (HID/LED Drivers), High-Voltage Signal Amplifier, Offline Switch-Mode Power Supply (SMPS) Aux Supply, Automotive and Industrial Ignition-Side Drivers.

💡

Compact Fluorescent Lamp (CFL) Ballasts

The STBV45's 400 V VCEO rating and cellular emitter switching structure make it well suited for CFL electronic ballast half-bridge or single-transistor driver topologies. The 750 mA continuous collector current handles the lamp preheat and strike currents typical of 5-23 W CFLs, while the fast switching speed keeps ballast losses low at the 30-50 kHz operating frequency. According to the ST datasheet, this part was specifically designed for CFL ballasts, making it a natural fit. Pair with a base-drive network sized to provide 1/8 to 1/4 of IC for saturated switching.

⚡

SMPS Battery Charger Primary-Side Switch

In offline switch-mode power supplies for battery chargers, the STBV45 serves as the primary-side high-voltage switch in flyback or forward topologies. The 400 V breakdown handles rectified 230 VAC mains (peak ~325 V) with adequate margin, and the 750 mA IC rating supports chargers in the 5-15 W output range. The wide RBSOA provides ruggedness against transformer leakage-inductance spikes during the turn-off transition. A snubber network is still recommended to limit voltage overshoot at turn-off peaks.

💡

Electronic Lighting Ballasts (HID/LED Drivers)

Beyond CFLs, the STBV45 is useful in electronic ballasts for low-wattage HID lamps and as a high-side driver in some linear LED driver circuits. The 400 V VCEO rating suits rectified mains operation, while the fast switching speed reduces ballast losses and improves luminous efficiency. For LED driving, the STBV45 can act as a constant-current regulator element, though modern designs increasingly favor MOSFETs or dedicated LED driver ICs. Always operate within the SOA at the chosen switching frequency.

🔧

High-Voltage Signal Amplifier

Although primarily a switch, the STBV45 can function as a high-voltage small-signal amplifier in measurement, instrumentation, or sensor interface circuits where 400 V collector swings are required. The NPN configuration suits common-emitter or emitter-follower topologies. With proper biasing, the device can deliver useful gain up to several hundred kHz. Note that for precision amplifier applications, modern matched-transistor pairs or op-amps offer better gain linearity and lower noise.

⚡

Offline Switch-Mode Power Supply (SMPS) Aux Supply

In auxiliary power supplies inside larger SMPS systems, the STBV45 can serve as the main switching element for low-power standby rails (typically 1-5 W). The high VCEO rating simplifies start-up circuitry, while the moderate current rating matches the auxiliary winding's typical load. The cellular emitter layout keeps switching losses low, contributing to good light-load standby performance. A simple single-transistor forward or flyback topology is typical.

🏭

Automotive and Industrial Ignition-Side Drivers

While not AEC-Q100 qualified, the STBV45's 400 V breakdown and 750 mA current handling suit non-safety-critical industrial high-voltage drivers, including ignition coils, solenoid drivers, and piezo actuator stages. The wide RBSOA protects against the inductive kickback typical of such loads. For automotive applications requiring AEC-Q100 qualification, alternative parts with explicit automotive grade should be selected. Always include a flyback or TVS diode across inductive loads.

What is the STBV45?
The STBV45 is a high-voltage, fast-switching NPN bipolar junction transistor from STMicroelectronics rated at 400 V VCEO/VCBO and 750 mA continuous collector current in a TO-92-3 through-hole package. According to the STMicroelectronics datasheet, it uses multi-epitaxial planar technology with a cellular emitter structure for fast switching and wide RBSOA. It is designed primarily for compact fluorescent lamp ballasts and SMPS battery-charger primary-side switching.
What is the maximum collector-emitter voltage of the STBV45?
The STBV45 has a maximum collector-emitter voltage (VCEO) of 400 V and an equivalent collector-base voltage (VCBO) of 400 V. This high breakdown voltage makes it suitable for offline mains-rectified applications such as CFL ballasts and primary-side SMPS switches. Designers typically derate to 60-80% of this rating in continuous operation to provide safety margin against inductive transients.
What is the maximum collector current of the STBV45?
The STBV45 is rated for a continuous collector current (IC) of 750 mA in its TO-92-3 package. According to the STMicroelectronics datasheet, the maximum power dissipation is 950 mW at 25 °C ambient. Sustained operation near the IC limit requires significant copper area or a heatsink to keep the junction temperature within safe limits, as the TO-92 package has limited thermal capacity.
What package does the STBV45 come in?
The STBV45 is supplied in a TO-92-3 through-hole package, which has three leads arranged in a standard E-B-C or E-C-B pinout depending on the manufacturer convention. The STMicroelectronics TO-92 variant follows the industry-standard TO-92 pinout with the flat face toward the observer. This package is well suited for hand prototyping, low-cost PCB designs, and consumer CFL/lighting products.
Is the STBV45 suitable for CFL ballast applications?
Yes, the STBV45 is specifically designed for compact fluorescent lamp (CFL) ballasts according to the STMicroelectronics datasheet. Its 400 V VCEO rating handles the rectified mains voltage, while its cellular emitter structure provides the fast switching speed required for high-frequency ballast operation. The wide reverse-biased safe operating area (RBSOA) also ensures ruggedness against the inductive transients common in lamp-startup circuits.
Where can I buy the STBV45 and what is the typical price?
The STBV45 is available from major distributors including DigiKey, with pricing starting around $0.78 per unit at qty-1 (as of 2026-10-05). Volume discounts reduce the price to approximately $0.31 per unit at the 1,000-piece break. The part is currently listed as active in distributor inventory and ships in bulk packaging.
What is the lead time for STBV45 from STMicroelectronics?
The STBV45 typically ships same-day from authorized distributors such as DigiKey and Mouser when in stock, with stock quantities commonly exceeding several thousand units at major catalog distributors (as of 2026-10-05). For larger production volumes (10k+ pieces), lead time is generally 6-12 weeks when ordered directly from STMicroelectronics. We recommend confirming current stock with the distributor before placing production orders.
STBV45 vs MPSA44 - which is better for a 300V offline switcher?
Both the STBV45 (STMicroelectronics, 400 V/0.75 A) and the MPSA44 (various manufacturers, 400 V/0.3 A) target high-voltage low-power switching, but they differ in current handling. The STBV45's 750 mA IC rating gives it roughly 2.5x the current headroom of the MPSA44's 300 mA, making the STBV45 the better choice when switching currents exceed ~250 mA. For lower-current circuits the MPSA44 may be acceptable. Both share similar TO-92 packaging footprints.
What is the best drop-in replacement for the STBV45?
For drop-in replacement on a TO-92 footprint, the STBV45's closest same-brand alternative is the STBV45D (a variant with potentially different pinout suffix). Cross-brand equivalents include the MPSA44 family (400 V NPN in TO-92) from onsemi and Fairchild. Verify the pinout (E-B-C vs E-C-B) matches before substitution, because TO-92 pinout conventions vary by manufacturer. All alternatives should be re-validated against hFE and VCE(sat) requirements.
When should I choose the STBV45 over a MOSFET for a high-voltage switch?
Choose the STBV45 NPN BJT over a MOSFET when you need low-cost high-voltage breakdown (400 V), moderate switching speeds (kHz to low-MHz range), and inherent ruggedness under second-breakdown fault conditions. BJTs like the STBV45 tolerate avalanche and short-circuit stress better than similarly-rated MOSFETs. However, choose a MOSFET when you require very high switching frequencies (above ~200 kHz), ultra-low gate drive power, or parallel operation without thermal runaway concerns.
Is the STBV45 the same as the 2N6517 or MPSA44?
No, the STBV45 is not the same as the 2N6517 or MPSA44. The STBV45 is rated 400 V VCEO/VCBO at 750 mA IC, while the MPSA44 is also 400 V but only 300 mA IC, and the 2N6517 is a 350 V/500 mA part. All three share the TO-92 package family, but their electrical ratings differ. Substitution requires comparing hFE, VCE(sat), and switching speed against the STMicroelectronics datasheet to ensure adequate design margin.
What cross-brand equivalent can replace the STBV45 from onsemi?
The closest onsemi cross-brand equivalents to the STBV45 are the MPSA44 (400 V/0.3 A NPN in TO-92) and the higher-current MJE13003 family (400 V/1.5 A NPN in TO-220). The MPSA44 is pin-compatible in TO-92 but only delivers 300 mA, so it is a drop-in only for circuits below that current. For full 750 mA current handling, consider the MJE13003 in a TO-220 footprint, which requires PCB layout change and is not a drop-in replacement.
What are the key specifications of the STBV45 that engineers should know?
The STBV45's key specifications are: 400 V VCEO and VCBO breakdown voltage, 750 mA continuous collector current, 950 mW power dissipation, TO-92-3 through-hole package, multi-epitaxial planar technology with cellular emitter, fast switching for CFL/SMPS applications, and wide reverse-biased safe operating area (RBSOA). According to the STMicroelectronics datasheet, the device is targeted at compact fluorescent lamp ballasts and SMPS battery chargers operating from rectified mains voltage.
Where to download the STBV45 datasheet PDF?
The official STBV45 datasheet PDF is available directly from STMicroelectronics at https://www.st.com/resource/en/datasheet/stbv45.pdf. The document covers absolute maximum ratings, electrical characteristics, switching performance curves, and application information for CFL ballast and SMPS designs. Third-party datasheet mirrors also exist at sites like alldatasheet.com, but the ST.com PDF is the authoritative reference for design decisions.
Where to find the STBV45 TO-92 pinout?
The STBV45 TO-92-3 pinout follows the standard TO-92 convention with the flat face toward the observer: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base (left to right with leads facing down). The official pinout diagram is published on page 1 of the STMicroelectronics datasheet at https://www.st.com/resource/en/datasheet/stbv45.pdf. Note that some manufacturers use E-C-B pinout; always verify against the ST datasheet before wiring.

Dados de referência de engenharia para STBV45 — comparação, orientação de projeto e informações de conformidade.

Guia de seleção

Choose the STBV45 when you need a 400 V VCEO NPN BJT with 750 mA continuous collector current in a low-cost TO-92-3 package for compact fluorescent lamp ballasts, SMPS battery chargers, or other offline mains-rectified switching applications. Choose the STBV45D if you need a same-brand variant for sourcing flexibility. Choose the MPSA44 only if your design operates below ~250 mA and you need an onsemi cross-brand option. Choose the MPSA42 for lower voltage (300 V) circuits. Choose the 2N6517 for legacy designs. For designs above 1 A continuous, step up to a TO-220 packaged device such as the MJE13003 family, but note this requires PCB layout change.

Comparação com alternativas

Parâmetro Este produto STBV45D MPSA44 MPSA42 2N6517
Package TO-92-3 (through-hole) TO-92-3 (through-hole) TO-92-3 (through-hole) TO-92-3 (through-hole) TO-92-3 (through-hole)
Brand STMicroelectronics STMicroelectronics onsemi onsemi onsemi
Transistor Type NPN BJT NPN BJT NPN BJT NPN BJT NPN BJT
VCEO (V) 400 V 400 V 400 V 300 V 350 V
VCBO (V) 400 V 400 V 400 V 300 V 350 V
Continuous Collector Current (mA) 750 mA 750 mA 300 mA 500 mA 500 mA
Power Dissipation (mW) 950 mW 950 mW 625 mW 625 mW 625 mW
Target Application CFL Ballasts, SMPS Battery Chargers CFL Ballasts, SMPS Battery Chargers General-purpose HV amplifier General-purpose HV amplifier General-purpose HV amplifier/switch

Principais diferenciais

  • Higher continuous collector current than competing 400V TO-92 NPN parts (vs MPSA44)
  • Specifically designed and characterized for CFL ballast switching (vs MPSA42 (300 V/500 mA))
  • Multi-epitaxial planar technology with cellular emitter structure (vs 2N6517 (350 V/500 mA))

Notas de projeto

Estimated: The TO-92-3 package has limited thermal dissipation capability. At maximum IC = 750 mA and VCE = 10 V, dissipation is ~7.5 W which exceeds the 950 mW rating. To stay within safe operating area, derate to ~50-100 mA continuous at high VCE, or operate in pulsed/switching mode where average dissipation is bounded by switching losses and duty cycle. For sustained high-current operation, consider a TO-220 packaged alternative.

When laying out the TO-92 footprint, leave at least 2-3 mm of copper land area around each lead to help dissipate heat into the PCB. Place the transistor away from heat-sensitive components and consider thermal vias to inner copper planes. For switching applications, minimize the loop area of the collector-emitter and base-drive circuits to reduce parasitic inductance that can cause voltage overshoot at turn-off.

Do not exceed the 400 V VCEO rating, especially under inductive load switching where voltage spikes can easily exceed the DC rating. Always include a snubber network (RC or RCD) across the primary switch in flyback/forward converters. Verify the base-drive provides sufficient base current at minimum hFE to ensure saturation; undersized base drive causes the device to operate in the active region, multiplying dissipation and risking thermal failure.

Informações de conformidade

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Qualified
Sem chumbo
Unknown
Sem halogênios
Unknown
Minerais de conflito
Unknown

Compliance status not explicitly stated in the verified web data for this part. STMicroelectronics TO-92 parts are typically lead-free finish per modern manufacturing standards, but RoHS/REACH compliance should be verified against the ST product page or lot documentation before use in regulated markets. Not AEC-Q100 qualified - not recommended for automotive safety-critical applications.

Dados verificados em: 2026-10-05 — dados verificados e curados pela equipe de engenharia de componentes da XAIPART

Buscas relacionadas

STBV45 STBV45 datasheet STBV45 STMicroelectronics 400V NPN transistor TO-92 high voltage switching transistor CFL TO-92 NPN BJT 750mA STBV45 vs MPSA44 STBV45 drop-in replacement STBV45 buy online price what is the maximum VCEO of STBV45 STBV45 SMPS battery charger STBV45 pinout TO-92

Componentes & termos relacionados

STMicroelectronics STBV45 STBV45D MPSA44 MPSA42 2N6517 onsemi NPN bipolar junction transistor BJT TO-92-3 through-hole package compact fluorescent lamp CFL ballast SMPS RBSOA multi-epitaxial planar technology cellular emitter structure VCEO VCBO collector current power dissipation high-voltage transistor fast-switching transistor switch-mode power supply battery charger
RFQ de cotação rápida
Preencha todos os detalhes — nossa equipe de vendas responderá em até 24 horas
Part number Fabricante Encapsulamento QTY Preço-alvo Total
Total: $0.00 USD
✓
Cotação enviada!

Responderemos seu e-mail em até 24 horas

1
RFQ enviada
2
Cotação recebida
3
Pedido realizado
4
Pagamento
5
Enviado
6
Entregue
Ver detalhes da RFQ