TEA2206T/1 - Active Bridge Rectifier Controller SOIC-8 | NXP
N.º da peça: TEA2206T/1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $5.3 | $5,30 |
| 10 | $4.95 | $49,50 |
| 100 | $4.55 | $455,00 |
| 500 | $4.25 | $2.125,00 |
| 1.000 | $3.95 | $3.950,00 |
TEA2206T/1 Visão geral
An active bridge rectifier controller is a power-management IC that senses mains polarity and actively drives MOSFETs in place of rectifier diodes. Within the power-conversion hierarchy (rectifier -> diode bridge -> PFC front end -> switch-mode power supply), it addresses the front-end conduction loss that constrains efficiency in desktop and notebook PC power supplies, adapters, and other AC-DC converters.
Key features include replacement of the two low-side bridge diodes with externally driven MOSFETs, a 50% reduction in typical diode forward-conduction losses, and up to 0.7% efficiency improvement at low-line 90 V AC input. According to NXP, a switched-mode power supply using the TEA2206T typically consists of a mains filter followed by a boost-type power-factor controller, with a resonant controller, flyback controller, or any other topology downstream.
Technically, the controller monitors the mains waveform via the L and R pins, and NXP explicitly notes in the datasheet that special attention must be paid to the connection of these pins, since correct sensing is essential for safe MOSFET commutation and prevention of cross-conduction. The device integrates the control, sensing, and gate-drive logic needed to switch the MOSFETs synchronously with the mains half-cycles.
Typical applications include desktop and notebook PC power supplies, AC-DC adapters, and high-efficiency switch-mode power converters where the diode-bridge loss is a meaningful share of total dissipation, especially at low-line input voltages.
When designing with this part, follow the NXP datasheet guidance on L and R pin connections and select low-RDS(on) high-voltage MOSFETs so that conduction losses remain well below the diode losses being replaced.
This page synthesizes distributor pricing, availability, datasheet references, and practical design notes not found in the manufacturer datasheet, providing a single citable engineering resource.
Alternativas drop-in para TEA2206T/1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
TEA2206T
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
TEA2206T/1J
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
TEA2206T/1 Classificações máximas e características elétricas
| Função | Active bridge rectifier controller |
| Topologia | Replaces two low-side diodes of diode bridge with MOSFETs |
| Efficiency Improvement | Up to approx. 0.7% at 90 V (AC) mains voltage |
| Rectifier Loss Reduction | Approx. 50% of typical diode forward-conduction losses |
| Encapsulamento | SOIC-8 (SO8) |
| Tipo de montagem | Surface Mount |
| Target Application | Desktop and notebook PC power supplies |
| External MOSFET Requirement | Low-ohmic high-voltage MOSFETs |
| Typical Power Stage | Mains filter + boost-type PFC front end |
Guia de Configuração de Pinos do TEA2206T/1 soic-8 (so8)
Configuração de pinos para TEA2206T/1 (pacote soic-8 (so8)). Este dispositivo de potência possui terminais de gate, drain e source. Para pacotes não polarizados, consulte o datasheet do fabricante para a orientação exata do pino 1 e detalhes do footprint. Aplicações comuns incluem projeto de fontes de alimentação, acionamento de motores e comutação de cargas.
Nenhum dado detalhado de pinagem disponível para TEA2206T/1.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
TEA2206T/1 é adequado para 6 aplicaçãos: Desktop PC Power Supplies, Notebook PC Adapters, AC-DC Switch-Mode Power Supplies, Power Factor Correction Front Ends, Industrial AC Mains Equipment, High-Efficiency Consumer Electronics.
Desktop PC Power Supplies
Desktop ATX power supplies draw significant current from the mains bridge, so the two low-side bridge diodes become a major conduction-loss contributor, especially at 90 V AC low-line input. The TEA2206T replaces those diodes with MOSFETs driven synchronously with the mains half-cycles, cutting typical rectifier-diode forward-conduction losses by 50% and improving overall efficiency by up to about 0.7% at 90 V AC per NXP data. In the power chain it sits after the mains filter and before a boost-type PFC stage, so it integrates without changing the downstream resonant or flyback topology. With low-RDS(on) high-voltage MOSFETs, the bridge dissipation drops enough to help meet 80 PLUS-class efficiency targets.
Recomendado
Notebook PC Adapters
Notebook AC adapters are thermally constrained by size, so every fraction of a percent of efficiency gained at the input bridge reduces heatsink demand and case temperature. The TEA2206T in its compact SOIC-8 package fits the space budget of adapter PCBs, replacing the low-side bridge diodes with actively driven MOSFETs. NXP data shows up to 0.7% efficiency improvement at 90 V AC mains, which directly lowers input-stage dissipation in universal-input (90-264 V AC) adapters. The device connects after the EMI mains filter and before a boost-type PFC or directly into the flyback stage, per the NXP datasheet topology description, keeping the rest of the power architecture unchanged.
Recomendado
AC-DC Switch-Mode Power Supplies
General-purpose SMPS designs across industrial and consumer equipment share the same input-bridge loss problem: at high rectified currents, two diode drops dominate front-end dissipation. The TEA2206T addresses this by replacing the two low-side bridge diodes with MOSFETs, reducing typical rectifier-diode forward-conduction losses by 50%. According to the NXP datasheet, the typical configuration is a mains filter, then the TEA2206T-based active bridge, then a boost-type power-factor controller; a resonant controller, flyback controller, or any other topology can follow. This makes it topology-agnostic at the secondary stage and easy to retrofit into existing SMPS platforms seeking higher efficiency.
Recomendado
Power Factor Correction Front Ends
The TEA2206T is designed to work immediately in front of a boost-type PFC stage, per the NXP datasheet system description. By minimizing bridge loss before the PFC inductor, the active bridge raises the efficiency of the entire PFC front end, which matters most at 90 V AC low line where input RMS current is highest. NXP notes efficiency can improve up to about 0.7% at 90 V AC. Correct connection of the L and R sense pins - which the datasheet flags as requiring special attention - ensures the bridge MOSFETs commutate in sync with the mains and the PFC stage sees a clean, low-loss rectified bus.
Recomendado
Industrial AC Mains Equipment
Industrial equipment powered from universal AC mains - drives auxiliaries, control supplies, instrumentation - benefits from the TEA2206T wherever continuous operation makes input-bridge losses accumulate into meaningful energy waste and cabinet heat. Replacing the two low-side bridge diodes with MOSFETs driven by the TEA2206T cuts typical diode forward-conduction losses by 50%, reducing thermal load in sealed enclosures. The SOIC-8 controller and two high-voltage MOSFETs integrate between the mains filter and the boost-type PFC stage per the NXP-recommended architecture. Designers must follow the datasheet guidance on L and R pin connections to guarantee reliable mains sensing in noisy industrial environments.
Recomendado
High-Efficiency Consumer Electronics
Consumer products with external or internal AC-DC supplies - set-top boxes, audio equipment, game consoles - face regulatory and marketing pressure on standby and active efficiency. The TEA2206T contributes up to 0.7 percentage points of efficiency improvement at 90 V AC by eliminating half of the bridge-diode conduction loss, per NXP specifications. Its SOIC-8 footprint and simple external parts count (two low-ohmic high-voltage MOSFETs plus sense components on the L and R pins) keep BOM cost proportional to the gain. The active bridge precedes the boost PFC and any downstream resonant or flyback converter, per the NXP datasheet topology guidance, making it a low-risk efficiency upgrade.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para TEA2206T/1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | TEA2206T | TEA2206T/1J |
|---|---|---|---|
| Package | SOIC-8 (SO8) | SOIC-8 (SO8) - same | SOIC-8 (SO8) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Function | Active bridge rectifier controller | Active bridge rectifier controller | Active bridge rectifier controller |
| Rectifier Loss Reduction | Approx. 50% of diode forward losses | Approx. 50% | Approx. 50% |
| Efficiency Gain at 90 V AC | Up to approx. 0.7% | Up to approx. 0.7% | Up to approx. 0.7% |
| Target Application | Desktop, notebook PC power supplies | Desktop, notebook PC power supplies | Desktop, notebook PC power supplies |
| External MOSFETs | Required (low-ohmic, high-voltage) | Required (identical) | Required (identical) |
Principais diferenciais
- Topology-agnostic efficiency upgrade (vs Conventional diode bridge)
- Same-die ordering-code flexibility (vs TEA2206T)
- Simple external parts count (vs Discrete active-rectification circuit built from comparators and gate drivers)
Notas de projeto
The NXP TEA2206T datasheet explicitly warns that special attention must be paid to the connection of the L and R pins. These pins sense mains polarity and timing for MOSFET commutation. Follow the datasheet application schematic exactly for resistor values and node connection; incorrect L/R wiring can cause wrong-polarity gate drive or simultaneous conduction of bridge MOSFETs, leading to catastrophic shoot-through across the rectified bus.
The efficiency benefit of the TEA2206T depends entirely on the external MOSFET choice. Estimated: conduction loss is I_rms^2 x RDS(on); for example, at 3 A RMS through a bridge leg, a 60R-class (0.041 ohm) MOSFET dissipates roughly 0.37 W versus several watts for a diode at ~1 V forward drop. Select low-ohmic high-voltage MOSFETs (NXP's stated requirement) with adequate voltage margin for your peak rectified bus voltage, and verify the controller's gate-drive capability against the MOSFET total gate charge per the NXP datasheet.
Keep the gate-drive loops from the TEA2206T to the two low-side bridge MOSFETs short and return them directly to the controller ground to minimize ringing and EMI, since these gates switch at mains frequency but with fast edges. Place the mains-sense network (L and R pins) away from gate traces to prevent coupling. Provide adequate copper around the MOSFETs for the reduced but nonzero conduction loss, and follow the NXP datasheet recommended layout for the application circuit.
Informações de conformidade
Compliance data was not present in the provided web data. Confirm RoHS/REACH status on the official NXP TEA2206T product page.
