Микросхемы памяти
Подкатегории
Товары (875)
H5TC4G63AFR-H9A - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
The H5TC4G63AFR-H9A is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V, in a 96-ball FBGA package. It is part of SK hynix's DDR3L family, designed for low-power main memory applications requiring high density and bandwidth. The device supports data rates up to 1866 Mbps (PC3-14900) with a CAS latency of 13, and is lead-free and halogen-free, RoHS compliant. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, embedded systems, and networking equipment where power efficiency is critical. Key features include a 4Gb density, 16-bit I/O width, 1.35V core and I/O supply, and a 96-ball FBGA package. The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination (ODT) for signal integrity. It supports auto-refresh and self-refresh modes, and includes a temperature-compensated self-refresh (TCSR) feature for low-power standby. Technically, the H5TC4G63AFR-H9A uses a 30nm-class process technology, achieving high density with low power. The -H9A speed grade indicates a tCK of 1.07ns (DDR3L-1866) and CL13. The device features a 16n prefetch architecture, enabling high bandwidth. It also includes programmable impedance calibration (ZQ calibration) for improved signal quality. Typical applications include main memory for ultra-thin laptops, embedded computing, networking routers, and industrial PCs. Its low voltage and high density make it ideal for space-constrained designs where power and performance are balanced. When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity at 1866 Mbps.
H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
The H5TC4G63AFR-PBA is a 4Gb DDR3L SDRAM organized as 256M x 16, manufactured by SK hynix. It operates at a low voltage of 1.35V, reducing power consumption by approximately 15% compared to standard DDR3 (1.5V). The device is housed in a 96-ball FBGA package, offering a compact footprint suitable for space-constrained applications. With a data rate of up to 1866 Mbps (PC3L-14900), it delivers high bandwidth for demanding computing tasks. DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture, transferring data on both edges of the clock signal. It is part of the DDR3 family, which succeeded DDR2 and was widely adopted in PCs, servers, and embedded systems. DDR3L specifically operates at 1.35V, making it ideal for power-sensitive applications such as laptops, networking equipment, and industrial computing. Key features include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT), ZQ calibration, and write leveling for improved signal integrity. It also supports auto self-refresh and partial array self-refresh for power savings. The operating temperature range is 0°C to +95°C (Tcase), suitable for commercial and industrial environments. Technically, the H5TC4G63AFR-PBA uses a CMOS process and features programmable CAS latency (CL) of 11, 12, and 13, with corresponding tRCD and tRP values. The device supports DLL (Delay-Locked Loop) for precise timing and includes a mode register for configuration. The 96-ball FBGA package has a ball pitch of 0.8mm, enabling high-density PCB layouts. Typical applications include DDR3L memory modules for laptops, embedded systems, networking routers, and industrial PCs. Its low voltage and high density make it suitable for designs requiring energy efficiency and compactness. The device is also used in set-top boxes and automotive infotainment systems. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The VDD and VDDQ should be supplied with 1.35V, and the reference voltage (VREF) must be generated accurately.
H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
The SK Hynix H5TC4G63AFR-PBI is a 4Gb DDR3L SDRAM organized as 256Mx16, operating at 1.35V with a data rate of DDR3-1600 (PC3L-12800). It comes in a 96-ball FBGA package (TFBGA, BGA96, 9x16, 32) and is designed for industrial temperature range (-40°C to +95°C). This memory device is widely used in networking, embedded computing, and industrial applications where low power and high density are required. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is commonly used in servers, routers, and industrial PCs. DDR3L is backward compatible with DDR3 slots in many designs, making it a versatile choice for memory upgrades. Key features include a 16-bit I/O width, 8 internal banks, and a burst length of 8 (BL8) with on-die termination (ODT) and programmable CAS latency. The device supports auto-refresh and self-refresh modes, with a typical refresh period of 7.8us at 85°C. The industrial temperature grade ensures reliable operation in harsh environments, and the 96-ball FBGA package provides a compact footprint for space-constrained designs. The H5TC4G63AFR-PBI uses a CMOS process technology and features a pseudo-open-drain output driver with adjustable impedance. It includes a DLL (Delay-Locked Loop) for precise timing alignment and supports write leveling for improved signal integrity. The memory operates from a single 1.35V supply, with an on-chip voltage regulator for the core, reducing external component count. Typical applications include network routers and switches, industrial automation controllers, embedded computing modules, and test and measurement equipment. Its low voltage and high density make it ideal for power-sensitive systems that require large memory capacity. When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a clean clock signal for reliable operation.
H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
The SK Hynix H5TC4G63AFR-PBJ is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V to reduce power consumption while delivering high bandwidth for main memory applications. It comes in a 96-ball TFBGA package with industrial temperature grade, making it suitable for embedded systems, networking equipment, and industrial computing. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, offering a 15% power reduction compared to standard DDR3 at 1.5V. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, servers, and embedded systems where power efficiency is critical. Key features include a 256M x 16 organization, 96-ball TFBGA package, industrial temperature grade (-40°C to +95°C), and support for 8192 refresh cycles. The device supports auto self-refresh, data mask, auto precharge, asynchronous reset, dynamic on-chip termination (DTC), ZQ calibration, and write leveling, ensuring reliable operation in demanding environments. The H5TC4G63AFR-PBJ uses a CMOS process and features a rectangular package shape. It is designed for high-density, high-bandwidth, and low-power applications. The industrial temperature grade allows operation in harsh conditions, making it ideal for automotive, industrial, and networking applications. Typical applications include main memory for embedded processors, networking routers and switches, industrial PCs, and test equipment. The low voltage and high bandwidth make it suitable for power-sensitive designs. When designing with this device, ensure proper decoupling and signal integrity practices are followed. The ZQ calibration pin requires a 240-ohm resistor to ground for optimal signal quality.
H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
The H5TC4G63AFR-PBR is a 4Gb DDR3L SDRAM (Double Data Rate 3 Low Voltage) organized as 256M x 16, manufactured by SK Hynix. It operates at a supply voltage of 1.35V (with 1.5V compatibility) and is housed in a 96-ball FBGA package (PBGA96). This memory device is designed for high-speed data transfer with a data rate of 1600 Mbps (PC3L-12800), featuring a CAS latency of 11 and a tRCD/tRP of 11. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It is compliant with the JEDEC DDR3L standard, ensuring interoperability with a wide range of controllers. DDR3L SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is a low-voltage variant of DDR3, operating at 1.35V instead of 1.5V, which reduces power consumption by approximately 15-20% compared to standard DDR3. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, and is widely used in computing, networking, and embedded systems. The low-voltage operation makes it ideal for power-sensitive applications such as laptops, servers, and industrial electronics. Key features of the H5TC4G63AFR-PBR include a 16-bit I/O interface, 8 internal banks, and a burst length of 8 (BL8) with burst chop (BC4). It supports auto refresh and self refresh modes, with a refresh interval of 7.8us at 85C and 3.9us at 95C. The device has a programmable output driver impedance and on-die termination for improved signal integrity. It also features a temperature-compensated self-refresh (TCSR) and a partial array self-refresh (PASR) for power savings. The package is a 96-ball FBGA with a 0.8mm ball pitch, measuring 13.5mm x 9.0mm, and is RoHS compliant. Technically, the H5TC4G63AFR-PBR uses a CMOS process and supports a clock frequency up to 800 MHz (DDR3L-1600). It has a tCK of 1.25ns and a tRCD of 13.125ns. The device includes a mode register set (MRS) for configuration and supports write leveling and read leveling for improved signal integrity. The I/O interface is SSTL-15 compatible, and the device supports a data strobe (DQS) differential pair. The memory is organized into 8 banks of 32M x 16, providing a total capacity of 4Gb. The device is designed for high-reliability applications and is available in a lead-free, halogen-free package. Typical applications for the H5TC4G63AFR-PBR include embedded systems, networking equipment (routers, switches), industrial PCs, and consumer electronics such as set-top boxes and smart TVs. Its low-voltage operation and high density make it suitable for memory-intensive applications where power efficiency is critical. The device is also used in automotive infotainment systems and medical devices that require reliable, high-speed memory. When designing with this device, ensure proper decoupling capacitors (0.1uF and 1uF) are placed near the VDD and VDDQ pins to minimize noise. The VREFCA and VREFDQ should be bypassed with 0.1uF capacitors. The device requires a stable 1.35V supply and a separate 1.35V VDDQ supply. For optimal signal integrity, route the DQ, DQS, and address lines with matched trace lengths and controlled impedance (typically 50 ohms single-ended, 100 ohms differential).
H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix
The H5TC4G63CFR-H9A is a 4Gb DDR3L SDRAM manufactured by SK hynix, organized as 256M x 16 bits. It operates at a low voltage of 1.35V (VDD=VDDQ=1.35V + 0.100 / - 0.067V), enabling power-efficient main memory solutions. The device is housed in a 96-ball TFBGA package, providing a compact footprint for space-constrained designs. It is lead-free and halogen-free, fully RoHS compliant, and supports a temperature range suitable for commercial and industrial applications. DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining backward compatibility with DDR3 environments. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, embedded systems, and networking equipment where energy efficiency is critical. Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. The DM (data mask) function masks write data at both rising and falling edges, ensuring data integrity. The device supports burst lengths of 8 and 4 (with burst chop), and features programmable CAS latency and additive latency for flexible timing. The H5TC4G63CFR-H9A is designed for high-bandwidth, low-power main memory applications. Its 4Gb density and x16 organization make it ideal for applications requiring large memory capacity with a moderate bus width. The 96-ball TFBGA package offers excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating high-density PCB layouts. Typical applications include laptops and ultrabooks, embedded computing, networking switches and routers, and industrial automation systems. The low operating voltage and high bandwidth make it suitable for battery-powered devices and energy-conscious designs. When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The device requires a stable 1.35V supply and careful signal integrity management for the high-speed data bus. Refer to the datasheet for detailed timing parameters and PCB layout guidelines.
H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
The H5TC4G63CFR-H9I is a 4Gb DDR3L SDRAM from SK hynix, organized as 256M x 16 bits. It operates at a low voltage of 1.35V, reducing power consumption by about 15% compared to standard DDR3 (1.5V). The device is housed in a 96-ball TFBGA package and is designed for industrial temperature range (-40°C to +95°C). It is lead-free and halogen-free, compliant with RoHS. DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture, transferring data on both edges of the clock. It is a key component in computing systems, providing high bandwidth and low power operation for main memory applications. The H5TC4G63CFR-H9I is part of the DDR3L family, which is widely used in servers, networking equipment, and embedded systems. Key features include a 4Gb density, 16-bit data bus, and support for data rates up to 1866 Mbps (PC3-14900). The device operates from a 1.35V supply, with an I/O voltage of 1.35V. It features programmable CAS latency, burst lengths of 8 and 4, and on-die termination (ODT) for improved signal integrity. The industrial temperature grade ensures reliable operation in harsh environments. The H5TC4G63CFR-H9I uses a high-performance CMOS process and advanced circuit design to achieve fast access times and low power consumption. It includes auto-refresh and self-refresh modes to minimize power in standby. The TFBGA package provides excellent thermal and electrical performance, making it suitable for space-constrained designs. Typical applications include main memory for industrial PCs, networking routers, and embedded computing modules. Its low voltage and industrial temperature range make it ideal for applications requiring reliability and energy efficiency. When designing with this device, ensure proper decoupling and signal integrity practices are followed. The DDR3L interface requires careful PCB layout to maintain signal quality at high speeds.
H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix
The H5TC4G63CFR-H9J is a 4Gb DDR3L SDRAM from SK Hynix, organized as 256M x 16, operating at a nominal supply voltage of 1.35V (VDD=VDDQ=1.35V +0.100/-0.067V). It is housed in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package with a rectangular body, designed for high-density main memory applications requiring low power and high bandwidth. The device is lead-free and halogen-free, compliant with RoHS regulations, and supports industrial temperature grades. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20-30% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both rising and falling edges of the clock, and is widely used in servers, networking equipment, and embedded systems where power efficiency is critical. Key features include fully differential clock inputs (CK, CK) for improved signal integrity, differential data strobes (DQS, DQS) for precise data capture, and an on-chip DLL that aligns DQ, DQS, and DQS transitions with the CK transition. The DM (Data Mask) function masks write data on both rising and falling edges, enabling byte-level write operations. The device supports industrial temperature range, making it suitable for harsh environments. Technically, the H5TC4G63CFR-H9J utilizes a CMOS process and features a 4-bit prefetch architecture typical of DDR3, achieving data rates up to 1866 Mbps (PC3-14900) at the -H9 speed grade. The 96-ball TFBGA package provides excellent thermal and electrical performance, with a compact footprint for space-constrained designs. The device is designed for high reliability and low power operation, with support for on-die termination (ODT) and programmable CAS latency. Typical applications include main memory for industrial PCs, networking routers and switches, embedded computing modules, and high-performance storage systems. The low voltage and high density make it ideal for power-sensitive applications where battery life or thermal management is a concern. When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the PCB layout guidelines in the datasheet for signal integrity, especially for the differential clock and data strobe pairs.
H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
The H5TC4G63CFR-PBA is a 4Gb DDR3L SDRAM organized as 256M x 16, manufactured by SK Hynix. It operates at VDD=VDDQ=1.35V with a tolerance of +0.100/-0.067V, enabling low-power operation for mobile and embedded systems. The device is housed in a 96-ball FBGA package (PBGA96) and is lead-free and halogen-free, fully RoHS compliant. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in computing, networking, and industrial applications where power efficiency is critical. Key features include fully differential clock inputs (CK, CK) for improved signal integrity, differential data strobe (DQS, DQS) for precise data capture, and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK. The DM (data mask) function masks write data on both rising and falling edges, and the device supports auto precharge, auto self-refresh, and dynamic on-chip termination (ODT) for signal quality. The H5TC4G63CFR-PBA uses a CMOS process and includes ZQ calibration for output driver and ODT impedance matching, write leveling for command/address timing, and asynchronous reset for initialization. These features ensure reliable high-speed operation and simplify system design. Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment (routers, switches), and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs. When designing with this device, ensure proper decoupling and follow the PCB layout guidelines in the datasheet to maintain signal integrity at high frequencies. The device requires a stable 1.35V supply and careful termination of the differential clock and strobe lines.
H5TC4G63CFR-PBL - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
The H5TC4G63CFR-PBL is a 4Gb DDR3L SDRAM (Double Data Rate 3 Low Voltage) memory chip from SK hynix, organized as 256M x 16 bits. It operates at a low voltage of 1.35V, making it ideal for power-sensitive applications such as mobile devices, embedded systems, and networking equipment. The device is available in a 96-ball FBGA package (TFBGA) and is lead-free and halogen-free, complying with RoHS standards. DDR3L SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, doubling the data rate compared to single data rate SDRAM. The 'L' denotes low voltage operation at 1.35V, reducing power consumption by about 15% compared to standard DDR3 at 1.5V. This makes DDR3L a preferred choice for battery-powered and thermally constrained designs. Key features of the H5TC4G63CFR-PBL include a data rate of 1600 Mbps (PC3L-12800), a burst length of 8, and support for on-die termination (ODT) and posted CAS. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8 us at 85C. The 96-ball FBGA package provides a compact footprint suitable for high-density PCB layouts. The H5TC4G63CFR-PBL uses a high-performance CMOS process technology, ensuring fast access times and low power consumption. The memory array is organized into 8 banks, each with 32K rows, providing efficient row activation and precharge operations. The device supports a programmable CAS latency of 11, 12, and 13, allowing flexibility in system timing. Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment such as routers and switches, and industrial automation controllers. The low voltage and high bandwidth make it suitable for applications requiring high memory density and low power. When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
H5TC4G63CFR-xxI - 4Gb DDR3L SDRAM | SK Hynix
The H5TC4G63CFR-xxI is a 4Gb DDR3L SDRAM manufactured by SK Hynix, designed for main memory applications requiring high density, high bandwidth, and low power operation at 1.35V. It operates with VDD=VDDQ=1.35V +0.100/-0.067V, features fully differential clock inputs (CK, CK), differential data strobes (DQS, DQS), and an on-chip DLL to align DQ, DQS, and DQS transitions with CK. The device is lead-free and halogen-free, RoHS compliant, and comes in a 78-ball FBGA package. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that achieves high data transfer rates by transferring data on both edges of the clock signal. It operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. DDR3L is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. Key features include a 4Gb density organized as 512M x 8, a data rate of [DATA_NEEDED: speed grade] (e.g., 1600 Mbps), and support for 1.35V operation. The device uses an 8n-prefetch architecture, which enables high bandwidth by fetching 8 data words per clock cycle. It also supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The H5TC4G63CFR-xxI is fabricated using advanced DRAM process technology, ensuring high reliability and low power consumption. The on-chip DLL synchronizes the output data with the clock, reducing skew and improving signal integrity. The device includes auto-refresh and self-refresh modes for low-power standby, and it supports temperature-compensated self-refresh (TCSR) to optimize refresh rate based on operating temperature. Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory density and low power are critical. The 1.35V operation makes it ideal for power-sensitive designs, such as laptops, portable devices, and energy-efficient data centers. When designing with this device, ensure proper decoupling of VDD and VDDQ with 0.1uF capacitors placed close to the pins. Follow the DDR3L layout guidelines for signal integrity, including matched trace lengths for DQ, DQS, and address/command signals. The device requires a stable 1.35V supply and a clean reference voltage (VREF) for optimal operation.
H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
The H5TC4G63CFR-xxJ is a 4Gb DDR3L SDRAM manufactured by SK Hynix, organized as 256M x 16. It operates at a low supply voltage of VDD = VDDQ = 1.35V, making it ideal for power-sensitive applications such as mobile devices, embedded systems, and networking equipment. The device features fully differential clock inputs (CK, CK#), differential data strobes (DQS, DQS#), and an on-chip DLL that aligns DQ, DQS, and DQS# transitions with the CK transition. It is lead-free and halogen-free, compliant with RoHS standards. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. DDR3L operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V), while maintaining compatibility with DDR3 signaling levels. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, and embedded applications. Key features include a 4Gb density, 16-bit I/O width, and support for various speed grades (e.g., -xxJ indicates a specific speed grade, likely 1600 Mbps or 1866 Mbps). The device uses a 96-ball FBGA package, which is standard for DDR3L SDRAM, ensuring compatibility with existing PCB designs. The operating temperature range is from 0°C to 95°C (case temperature), and it supports auto-refresh and self-refresh modes for power saving. Technically, the H5TC4G63CFR-xxJ employs an 8n-prefetch architecture, which allows high-speed data transfer by fetching 8 data bits per clock cycle per I/O. It includes programmable CAS latency, burst length (8 and 4 with burst chop), and on-die termination (ODT) for signal integrity. The device also supports write leveling and read leveling for improved timing margins in high-speed systems. Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment like routers and switches, and industrial computing platforms. Its low voltage and high density make it suitable for power-constrained designs that require large memory capacity. When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the DDR3L layout guidelines for signal integrity, including impedance matching and length matching for data and address lines. The device requires a stable 1.35V supply and a reference voltage (VREF) for the command/address bus.
H5TC4G63CFR-xxL - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
The H5TC4G63CFR-xxL is a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM manufactured by SK Hynix. It is organized as 256M x 16 and operates at a low voltage of 1.35V, making it ideal for main memory applications that require large memory density, high bandwidth, and low power operation. The device is lead-free and halogen-free, compliant with RoHS standards, and is available in a 96-pin FBGA package. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20% while maintaining backward compatibility with DDR3-based environments. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in laptops, embedded systems, and networking equipment where power efficiency is critical. Key features of the H5TC4G63CFR-xxL include a 4Gb density, 256M x 16 organization, 1.35V power supply, and support for data rates up to 2133 Mbps (depending on the speed grade). The device offers low power consumption, with a typical operating current of [DATA_NEEDED: IDD0] and standby current of [DATA_NEEDED: IDD2P]. It also features on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The device is designed for reliable operation over a temperature range of [DATA_NEEDED: operating temperature range]. The H5TC4G63CFR-xxL utilizes advanced DRAM process technology, providing high density and performance while minimizing power consumption. The 96-pin FBGA package offers excellent thermal and electrical characteristics, supporting high-speed signaling with minimal parasitic inductance. The device includes auto-refresh and self-refresh modes to maintain data integrity with minimal power draw. Typical applications include main memory for laptops and ultrabooks, embedded systems, networking equipment, and industrial computing. The low voltage and high bandwidth make it suitable for power-sensitive designs that require high performance. The device is also used in memory modules and system-on-module (SoM) designs. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Refer to the SK Hynix datasheet for detailed design guidelines and timing parameters.
H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
The H5TC4G63MFR-PBA is a 4Gb DDR3L SDRAM organized as 256M x 16, manufactured by SK hynix. It operates at a supply voltage of 1.35V (VDD and VDDQ) with a range of +0.100V/-0.067V, and is housed in a 96-ball FBGA package. This memory device supports data rates up to 1866 Mbps (PC3L-14900) and is designed for low-power applications, offering a significant reduction in power consumption compared to standard DDR3. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and enterprise servers where power efficiency is critical. Key features include a 16-bit I/O configuration, 8 internal banks, and support for various burst lengths (BL8 and BL4 with burst chop). The device includes on-die termination (ODT), ZQ calibration, write leveling, and dynamic ODT for improved signal integrity. It also supports auto self-refresh and a temperature-compensated self-refresh rate to minimize standby power. The H5TC4G63MFR-PBA uses a 30nm-class process technology, enabling high density with low power. It features programmable CAS latency (CL), CAS write latency (CWL), and additive latency, allowing flexibility in system timing. The device is compliant with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers. Typical applications include mobile computing, networking equipment, industrial automation, and embedded systems where low power and high performance are required. Its 256Mx16 organization is ideal for systems needing a single high-density memory chip with a 16-bit data bus. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a stable 1.35V supply and careful termination of the address/control bus.
H5TQ2G63GFR-TEC - 2Gb DDR3 SDRAM 128Mx16 FBGA-96 | SK Hynix
The SK Hynix H5TQ2G63GFR-TEC is a 2 Gigabit DDR3 SDRAM organized as 128M x 16 bits, with industrial -40C to +95C operating temperature support, in a 96-ball FBGA (PBGA-96) lead-free, halogen-free RoHS-compliant package. DDR3 SDRAM (Double Data Rate 3 Synchronous DRAM) is a CMOS dynamic random-access memory that transfers data on both rising and falling edges of a differential clock, doubling bandwidth versus single-data-rate designs. Within the memory hierarchy it sits below DDR4/DDR5 generations and above DDR2, and it remains the dominant DRAM class for cost-sensitive industrial, networking, and embedded main-memory designs requiring large density and high bandwidth on a 1.5V-class interface. Key features of the H5TQ2G63 family include fully synchronous operation referenced to both clock edges, auto self-refresh, an auto precharge function, an asynchronous reset function, data mask (DM) support for byte-wise write masking, dynamic on-die termination (ODT), ZQ calibration for output impedance matching, and write leveling for fly-by topology signal integrity. The -TEC speed-grade suffix denotes an extended industrial temperature rating, making this variant suitable for uncontrolled-environment systems. Architecturally, the device contains multiple banks with row activation, column read/write pipelines, and burst lengths of 8 (BL8) with on-the-fly addressing, as described in the manufacturer datasheet. Source data identifies the related H5TQ2G63DFR parts as 2,147,483,648-bit CMOS DDR3 SDRAMs operating at up to 933 MHz clock (DDR3-1866 class), ideally suited for main memory applications requiring large memory density and high bandwidth. Typical applications include embedded main memory for industrial controllers, networking and communication equipment, set-top boxes, and FPGA-based processing boards that implement DDR3 memory controllers. The x16 organization simplifies 16-bit and 32-bit wide memory subsystems with two devices. Design consideration: DDR3 signal integrity depends on length-matched routing, ODT configuration via mode registers, and correct ZQ calibration resistor placement; follow the reference routing guidelines in the manufacturer datasheet. This page synthesizes distributor pricing, same-family drop-in alternatives, application guidance, and design notes not found in the manufacturer datasheet.
H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix
The H5TQ4G63AFR-H9C is a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM from SK Hynix, organized as 256M x 16. It operates at a clock speed of 0.255ns (tCK) and is packaged in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) with a rectangular shape. This device is designed for main memory applications requiring high density and bandwidth, offering fully synchronous operations referenced to both rising and falling edges of the clock. It supports a supply voltage of 1.5V and features 8192 refresh cycles, ensuring data integrity in high-performance computing environments. DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to single-data-rate SDRAM. It is a key component in the memory hierarchy, serving as the main system memory in computers, servers, and embedded systems. DDR3 is the successor to DDR2 and offers higher bandwidth and lower power consumption, making it suitable for a wide range of applications from consumer electronics to enterprise data centers. Key features of the H5TQ4G63AFR-H9C include a 4Gb density, 256M x 16 organization, and a 96-ball TFBGA package. It is halogen-free and RoHS compliant, meeting environmental standards. The device operates with a 1.5V power supply and supports a data rate of 0.255ns (approximately 3.9 Gbps per pin). The refresh cycle count of 8192 ensures reliable operation over extended periods. The package is designed for surface mount technology, enabling compact and high-density PCB layouts. Technically, the H5TQ4G63AFR-H9C utilizes advanced CMOS process technology to achieve high speed and low power. It features programmable CAS latency, burst length, and other timing parameters via the mode registers, allowing system designers to optimize performance. The device supports on-die termination (ODT) and dynamic ODT for improved signal integrity, which is critical at high data rates. The 96-ball TFBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating routing and manufacturing. Typical applications for the H5TQ4G63AFR-H9C include desktop and laptop computers, servers, networking equipment, and embedded systems that require high-capacity, high-bandwidth memory. Its 256M x 16 organization is ideal for systems with a 16-bit data bus, such as many microprocessors and SoCs. The device's low power consumption and high reliability make it suitable for both consumer and industrial applications. When designing with this DDR3 SDRAM, it is essential to ensure proper signal integrity by following the layout guidelines for high-speed memory interfaces, including controlled impedance traces, proper termination, and decoupling. The memory controller must be configured to match the device's timing parameters, such as CAS latency and burst length, to achieve optimal performance. Additionally, thermal management should be considered, as high-speed operation can generate significant heat.
H9JCNNNBK3MLYR-N6E - 16Gb LPDDR5-6400 SDRAM | SK Hynix
The SK Hynix H9JCNNNBK3MLYR-N6E is a 16 Gb (2 GB) LPDDR5-6400 SDRAM organized as 512M x 32 with a 1.05 V core supply, housed in a 315-ball TFBGA package. It delivers a 6400 Mbps per-pin data rate over a dual-channel architecture, targeting high-bandwidth, power-sensitive mobile and embedded platforms. LPDDR5 (Low-Power Double Data Rate 5) is the fifth generation of the JEDEC low-power DRAM standard, positioned above LPDDR4X in the memory hierarchy: LPDDR5 SDRAM -> low-power DRAM -> DRAM -> volatile memory IC. Unlike standard DDR5 DIMM modules, LPDDR5 devices are soldered directly to the PCB, use a narrow 32-bit (x32) channel, and trade socketability for dramatically lower I/O power and a smaller footprint. The 1.05 V VDD2 rail is lower than the 1.1 V of LPDDR4X, which is the primary lever for reducing total memory power in battery-operated systems. Key differentiators of this part include its 6400 Mbps pin speed (a 33% uplift over LPDDR4X-4266), the 512M x 32 organization that maps cleanly onto 32-bit SoC memory controllers, and the TFBGA-315 ballout that is footprint-compatible across the SK Hynix LPDDR5 family. The device supports bank-group architecture and a low-power clock-stop mode for aggressive idle power reduction. Architecturally, the die uses SK Hynix's advanced 1-alpha-class DRAM process and integrates on-die termination (ODT), a programmable write-leveling scheme, and per-bank refresh to reduce peak current. The dual-channel x16+x16 internal split allows the controller to interleave accesses and hide refresh latency, which is critical for sustained bandwidth in AI inference and 4K video pipelines. Typical applications include flagship smartphones, automotive ADAS domain controllers, edge AI inference modules, 5G CPE and small cells, AR/VR headsets, and industrial machine-vision systems. In each case the 6400 Mbps rate and 1.05 V rail allow the SoC to hit its memory-bandwidth target without a discrete power penalty. A key design consideration is that LPDDR5 requires careful PCB trace-length matching and impedance control on the 32-bit data bus; unlike a DIMM, there is no module-level calibration, so signal integrity must be engineered at the board level. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H9JCNNNBK3MLYR-N6E - 16Gb LPDDR5-6400 SDRAM | SK Hynix
The SK Hynix H9JCNNNBK3MLYR-N6E is a 16 Gb LPDDR5-6400 SDRAM organized 512M x 32 on a 16-bit data bus, supplied in a 315-ball TFBGA (TFBGA-315) surface-mount package and rated for data rates up to 6400 Mbps. It operates from a 1.05 V main supply (range 1.01 V to 1.12 V) with a 1.7 V to 1.95 V rail for the DRAM array, and is qualified to industrial thermal envelopes typical of mobile and embedded platforms. The device belongs to the SK Hynix H9JCNNN family of LPDDR5 products targeting power-sensitive, high-bandwidth applications. An LPDDR5 SDRAM (Low-Power Double Data Rate 5 Synchronous DRAM) is a JEDEC-defined volatile memory standard optimized for mobile and embedded systems where bandwidth density and energy per bit are the dominant design constraints. LPDDR5 succeeds LPDDR4/4X by adding sub-channels, higher per-pin data rates (up to 6400 Mbps/pin in this -N6E speed grade), improved command/address efficiency via ECC-on-command and dynamic frequency scaling, and a deep-sleep state for idle retention. In the broader hierarchy LPDDR5 sits under DRAM -> volatile memory -> semiconductor memory -> integrated circuit, and competes architecturally with LPDDR5X and DDR5 in mobile SoC designs. Key features of the H9JCNNNBK3MLYR-N6E include 6400 Mbps per-pin data rate, dual 16-bit sub-channels for a 32-bit logical interface, on-die temperature sensor, refresh management, and WriteX/ReadX training features defined by the LPDDR5 standard. The 315-ball TFBGA package is designed for high-density PCB layouts with matched-length routing, supporting both mobile form factors and embedded module designs. The H9JCNNNBK3MLYR-N6E is typically designed into smartphone application processors, AI edge inference modules, tablet SoCs, and automotive infotainment platforms where sustained memory bandwidth must be delivered within tight thermal envelopes. Its low-voltage operation and deep-sleep states also make it suitable for always-on inference and wearable compute. When designing with this part, observe JEDEC LPDDR5 PCB layout guidelines: matched impedance for command/address and data lanes, length matching within a sub-channel, decoupling concentrated near the package, and a clean 1.05 V LDO/DC-DC rail. Verify pin-out against the official SK Hynix datasheet before board fab to confirm the -N6E ball map. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the SK Hynix datasheet, helping engineers validate BOM, footprint, and power budget decisions for LPDDR5-based designs.
H9JCNNNBK3MLYR-N6E-SK - 16Gb LPDDR5-6400 SDRAM | SK Hynix | TFBGA-315
The SK Hynix H9JCNNNBK3MLYR-N6E-SK is a 16 Gigabit LPDDR5-6400 SDRAM organized as 512M x 32 in a 315-ball TFBGA surface-mount package, delivering up to 6400 Mbps per pin data rate over a 16-bit data bus. Operating from a 1.05 V core supply (rail range 1.01 V to 1.12 V) with a 1.7 V to 1.95 V supply for the I/O, it is engineered for high-bandwidth, power-sensitive mobile and embedded platforms. LPDDR5 (Low-Power Double Data Rate 5) SDRAM is a JEDEC-defined volatile memory standard designed as the successor to LPDDR4/4X for smartphones, tablets, ultra-thin notebooks, AI edge devices, and automotive infotainment. It belongs to the SDRAM -> DRAM -> volatile memory -> memory IC hierarchy. Compared with LPDDR4X, LPDDR5 doubles peak bandwidth to 6400 Mbps, introduces lower VDD voltages for energy efficiency, and adds on-die ECC and Decision Feedback Equalization (DFE) for signal integrity at high speeds. Key differentiating parameters include the 6400 Mbps data rate, 16-bit bus width, four-channel internal architecture, 1.05 V VDDQ, and an operating temperature range of -55C to +125C (industrial-grade, the widest grade in the H9JCNNN family). The device supports deep-sleep and power-down modes for sub-mW standby current. The 315-ball TFBGA package provides a low-profile footprint suitable for height-constrained mobile designs. The architecture is built on SK Hynix's advanced 1y-nm DRAM process, integrating the PMIC interface commands, frequency set, and refresh management defined by JEDEC JESD209-5. The dual-channel configuration enables parallel access for application processors, AI accelerators, and GPUs sharing the same memory pool. Built-in ECC mitigates single-bit soft errors at sub-20 nm nodes. Typical applications include flagship smartphone main memory, AI edge inference modules, ultra-thin notebook DRAM, automotive infotainment and ADAS platforms, and high-bandwidth industrial controllers. It pairs naturally with Snapdragon 8-series, MediaTek Dimensity, and Apple A-series application processors that natively support LPDDR5-6400 interfaces. Designers must route the 16-bit data bus as length-matched differential pairs with controlled impedance (typically 85 ohm differential), place a 0.1 uF + 1 uF decoupling capacitor network near each VDD/VDDQ ball, and follow SK Hynix reference PCB layout for the 315-ball TFBGA land pattern. The -SK suffix indicates SK Hynix branded reel/tray packaging. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing engineering value beyond simple spec repetition.
HMCG78CGBSA095N - 16GB DDR5-5600 SODIMM 1Rx8 | SK hynix
The SK hynix HMCG78CGBSA095N is a 16GB DDR5 SODIMM memory module operating at 5600 MT/s (PC5-44800), with CL46 latency at 1.1 V, built on a 1Rx8 organization in a 262-pin unbuffered non-ECC SODIMM package. It uses eight 2Gx8 DDR5 DRAM components (8C configuration) validated to the DDR5-5600B speed bin. A SODIMM (Small Outline Dual In-line Memory Module) is a compact memory module form factor designed for space-constrained systems such as laptops, mini PCs, and embedded platforms. Within the memory hierarchy, it belongs to the DDR5 DRAM module family - the successor to DDR4 - delivering double the bank groups, on-module power management, and higher data rates than the 3200 Mbps typical of DDR4 SODIMMs. Key features of the HMCG78CGBSA095N include the DDR5-5600 data rate per the JEDEC DDR5 standard, PC5-44800 bandwidth class, and a CAS latency of 46 at 1.1 V operation. The 1Rx8 single-rank organization simplifies memory controller training and can reduce power draw compared to dual-rank configurations of the same capacity. Technical architecture: the module integrates eight 2Gb x8 DDR5 SDRAM die per the 8C stacking scheme, an on-module 5V-to-1.1V PMIC (Power Management IC) that moves voltage regulation off the motherboard, and an SPD hub that stores training data and serial presence detect information for the host BIOS. Typical applications include laptop and notebook memory upgrades, mini PC and small-form-factor desktops, industrial computing platforms, and test equipment requiring 16GB of DDR5 SODIMM memory with 5600 MT/s throughput. Design consideration: verify host-platform support for DDR5-5600 SODIMMs and ensure BIOS/SPD compatibility before deployment; mixing modules of different ranks or speed bins may force downclocking to the lowest common denominator. This page synthesizes distributor availability, drop-in same-footprint alternatives, and practical upgrade guidance not found on a single manufacturer page. Pricing and stock data reflect distributor listings as of 2026-09-05.
HMCG78MEBRA113N - 16GB DDR5-4800 ECC RDIMM | SK hynix
The SK hynix HMCG78MEBRA113N is a 16GB DDR5 ECC Registered DIMM (RDIMM) memory module operating at 4800 MT/s (PC5-38400) with CL40 latency at 1.1V, in a 288-pin DIMM form factor with a 1Rx8 (single rank, x8) organization. A registered (buffered) DIMM is a server-class memory module that places a register between the DRAM arrays and the memory controller, reducing electrical load on the command/address lines and enabling higher module counts per channel than unbuffered desktop UDIMMs. RDIMMs sit within the memory module hierarchy (DRAM IC -> module -> registered DIMM -> enterprise memory subsystem) and are the standard memory type for servers and workstations, distinguishing them from unregistered ECC SODIMMs and consumer UDIMMs. Key features of the HMCG78MEBRA113N include its 16GB capacity per module, 4800 MT/s data rate certified as PC5-38400, and on-module ECC registered architecture that corrects single-bit memory errors for data integrity in always-on enterprise systems. The 1.1V operating voltage follows the JEDEC DDR5 standard, delivering lower power per bit transferred than DDR4 RDIMMs of equivalent capacity. The 1Rx8 single-rank organization keeps command scheduling simple for the memory controller and suits dense multi-DIMM-per-channel server boards. Technically, the module uses DDR5 DRAM devices with on-die ECC and a side-band management interface, and the register/buffer logic decouples command/address signaling so the module meets JEDEC DDR5 RDIMM timing at 4800 MT/s with CL40 (40-40-40 typical JEDEC scaling). Backward compatibility to 4400 MT/s is supported on platforms whose memory controllers negotiate lower speeds. Typical applications include enterprise servers based on Intel Xeon Scalable 4th/5th Gen and AMD EPYC processors, such as HPE ProLiant Gen10+/Gen11, Dell PowerEdge 16G series, and Lenovo ThinkSystem platforms, as well as virtualization hosts and data-intensive workloads where ECC protection is mandatory. When designing or configuring systems, populate DIMM slots per the server vendor's population rules for single-rank RDIMMs and confirm that the platform BIOS supports 4800 MT/s; otherwise the module will downclock gracefully to the highest mutually supported JEDEC speed. This page synthesizes distributor pricing, stock data, drop-in alternative module numbers, and platform compatibility notes not found in a single manufacturer datasheet.
HMCG84AEBRA - 32GB DDR5 4800 RDIMM 1Rx4 ECC Reg | SK hynix
The SK hynix HMCG84AEBRA is a 32 GB DDR5-4800 Registered ECC DIMM module in a 288-pin EC8 RDIMM form factor, organized as a single-rank 1Rx4 configuration and operating at the JEDEC-standard 1.1 V supply rail. It delivers a peak data rate of 4800 MT/s (PC5-38400), making it one of the baseline-speed modules in the SK hynix server-memory lineup designed for Intel Sapphire Rapids / 4th Gen Xeon Scalable and AMD EPYC 9004 (Genoa) platforms. A single 32 GB module per channel enables dense memory configurations for virtualization, in-memory databases, and AI inference hosts. A Registered DIMM (RDIMM) is a type of server-class memory module that places a register buffer between the DRAM chips and the memory controller, electrically isolating the controller from the heavy capacitive load of multiple ranks. RDIMMs sit in the memory module hierarchy alongside UDIMMs (unbuffered), LRDIMMs (load-reduced), and MRDIMMs (multiplexed rank), and are the workhorse module type for mainstream dual-socket servers. The 1Rx4 organization means all DRAM chips reside on a single rank accessed across a 64-bit data width split into four x4 devices, which trades peak bandwidth per access for higher module density at lower cost-per-bit. Key features of the HMCG84AEBRA include JEDEC DDR5-4800 conformance, on-module ECC (error-correcting code) for single-bit error correction and multi-bit error detection, on-board voltage regulation via the 12 V PMIC, and the SK hynix 1ynm-class DRAM die. The module carries server-grade validation against common server CPU memory reference designs and supports the standard server thermal envelope of 0–95 °C operating temperature. Typical applications of the HMCG84AEBRA include dual-socket mainstream servers, virtualization hosts running VMware ESXi / Hyper-V / KVM, in-memory databases such as SAP HANA and Redis Enterprise, deep-learning inference nodes, and edge / HPC compute nodes. It is also used as the baseline DDR5-4800 building block for customers who plan to upgrade to higher-speed 5600 MT/s modules later. When designing with this module, follow the server OEM's Qualified Vendor List (QVL) for the exact platform — many OEM servers validate only specific SPD programming revisions (HMCG84AEBRA vs HMCG84AEBRA115N vs HMCG84MEBRA). Mixing 1Rx4 and 2Rx4 modules in the same channel is allowed only in some platforms; consult the BIOS release notes. This page synthesizes distributor pricing, module-revision cross-references, and platform compatibility notes not collated in a single SK hynix product folder.
HMCG84AHBRA - 32GB DDR5-6400 ECC RDIMM 1Rx4 1.1V | SK Hynix
The SK Hynix HMCG84AHBRA is a 32 GB DDR5-6400 ECC Registered DIMM (RDIMM) organized as 1Rx4 (single-rank, x4 data width) and operating at 1.1 V with a JEDEC-standard CAS Latency of CL52. Housed on a 288-pin DIMM module, it delivers a peak transfer rate of 6400 MT/s (PC5-51200) suitable for mainstream server, edge compute, and single-socket to dual-socket general-purpose workloads. A DDR5 RDIMM (Registered DIMM) is a server-class memory module that buffers the command, address, and control signals through a register clock driver (RCD) on the module itself, enabling higher densities, better signal integrity at high speeds, and larger channel capacities than unbuffered DIMMs. Within the memory hierarchy, DDR5 sits at the top of the system memory tier - below the CPU cache and above storage (SSDs/HDDs), part of the broader DRAM family under the volatile semiconductor memory category. Key features of the HMCG84AHBRA include 32 GB module capacity, 1Rx4 rank/organization, ECC support for single-bit error correction and multi-bit error detection, on-module voltage regulation (DDR5 PMIC), and a 1.1 V operating voltage that improves performance-per-watt versus DDR4. The PC5-51200 bandwidth and 6400 MT/s data rate enable modern server CPUs to feed multi-core workloads without becoming memory-bound, while 1Rx4 topology supports platforms that prefer single-rank modules for compatibility or specific rank-interleaving schemes. Technically, the module complies with the DDR5 RDIMM standard, integrating an on-board PMIC for voltage regulation, a temperature sensor for thermal management, and ECC (error-correcting code) capability via the JEDEC-defined DRAM features. The x4 organization indicates four-bit-wide DRAM devices on the module, which provides a balance of capacity, parallelism, and error-detection granularity commonly used in server workloads. Typical applications include 1P/2P server platforms running virtualization, enterprise databases, edge compute nodes, low-VM-density compute hosts, AI inference at the edge, and general-purpose data-center workloads where 32 GB per module is the sweet spot for cost-per-gigabyte. It is also used in workstation-class systems requiring ECC memory reliability. When designing or qualifying with HMCG84AHBRA, verify the CPU memory controller's supported DIMM population rules and DDR5-6400 speed bin (some platforms require BIOS updates to enable 6400 MT/s, and 1Rx4 may not be supported on all channels). Always match module ranks per channel per the OEM's memory population guide to avoid downclocking. This page synthesizes distributor pricing snapshots from multiple vendors, JEDEC-compliant drop-in equivalent RDIMMs from competing DRAM manufacturers, and practical population/qualification notes - information not consolidated on the manufacturer product page.
IG5208 - PCIe Gen3 x2 NVMe SSD Controller | InnoGrit
The InnoGrit IG5208 is a DRAM-less PCIe Gen3 x2 NVMe 1.3 SSD controller with support for capacities up to 2 TB and four flash-memory channels, designed for cost-sensitive solid-state drive designs. It uses Host Memory Buffer (HMB) instead of dedicated external DRAM, reducing component cost while retaining NVMe storage functionality. The controller supports sequential performance up to 1750 MB/s read and 1500 MB/s write, according to the supplied overview material. An SSD controller is the semiconductor core inside an NVMe solid-state drive. It connects a host interface to NAND flash, manages logical-to-physical address translation, coordinates data transfers, and implements flash error correction and wear-management functions. The IG5208 belongs to the PCIe storage-controller hierarchy and targets M.2 and BGA SSD form factors. Key verified features include a PCIe Gen3 x2 host interface, NVMe 1.3 support, capacity up to 2 TB, four flash channels, and a DRAM-less architecture using HMB. Its lack of dedicated DRAM reduces bill-of-materials cost, but HMB availability depends on host support and system behavior. The supplied data does not specify NAND types, ECC details, endurance, power consumption, package dimensions, pin count, operating temperature, or lifecycle status. Typical uses include client SSDs, M.2 NVMe modules, embedded storage, and cost-focused systems requiring PCIe 3.0 x2 connectivity. The controller's four-channel NAND organization is intended to support high storage capacity while maintaining a compact SSD design. Firmware, NAND qualification, thermal validation, and PCB signal-integrity work remain essential parts of a successful IG5208-based product. For designs using IG5208, validate the exact NAND interface, PCIe lane routing, power sequencing, thermal profile, and HMB behavior with the manufacturer. The supplied overview does not expose a complete electrical datasheet or package pinout, so those implementation details should be obtained directly from InnoGrit before layout release. This page summarizes verified source information and clearly separates unavailable parameters from confirmed specifications.