H5TC4G63CFR-xxL - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
Артикул: H5TC4G63CFR-xxL ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
H5TC4G63CFR-xxL Обзор
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20% while maintaining backward compatibility with DDR3-based environments. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in laptops, embedded systems, and networking equipment where power efficiency is critical.
Key features of the H5TC4G63CFR-xxL include a 4Gb density, 256M x 16 organization, 1.35V power supply, and support for data rates up to 2133 Mbps (depending on the speed grade). The device offers low power consumption, with a typical operating current of and standby current of . It also features on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The device is designed for reliable operation over a temperature range of .
The H5TC4G63CFR-xxL utilizes advanced DRAM process technology, providing high density and performance while minimizing power consumption. The 96-pin FBGA package offers excellent thermal and electrical characteristics, supporting high-speed signaling with minimal parasitic inductance. The device includes auto-refresh and self-refresh modes to maintain data integrity with minimal power draw.
Typical applications include main memory for laptops and ultrabooks, embedded systems, networking equipment, and industrial computing. The low voltage and high bandwidth make it suitable for power-sensitive designs that require high performance. The device is also used in memory modules and system-on-module (SoM) designs.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Refer to the SK Hynix datasheet for detailed design guidelines and timing parameters.
Аналоги без доработки для H5TC4G63CFR-xxL — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с H5TC4G63CFR-xxL (тот же форм-фактор и посадочное место) — отличается по Package, Supply Voltage, Density, Clock Frequency, Interface.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
H5TC4G63CFR-xxA
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
H5TC4G63CFR-PBA
✅ Прямая замена✓ В наличии
$6.23 / шт.
Открыть даташит →H5TC4G63CFR-RDA
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
H5TC4G63CFR-RDAR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K4B4G1646E-BYMA
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$14.3182 / шт.
Открыть даташит →MT41K256M16TW-107
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$14.1 / шт.
Открыть даташит →H5TC4G63CFR-xxL Максимальные параметры и электрические характеристики
| Тип памяти | DDR3L SDRAM |
| Density | 4Gb |
| Организация памяти | 256M x 16 |
| Напряжение питания | 1.35V |
| Корпус | 96-pin FBGA |
| Burst Length | 8 (with burst chop) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Без галогенов | Yes |
| Тип монтажа | Surface Mount |
| Количество выводов | 96 |
| Интерфейс | DDR3L |
Конфигурация выводов H5TC4G63CFR-xxL
| Контакт A0-A14 | Address Inputs — Row/column address inputs |
| Контакт BA0-BA2 | Bank Address Inputs — Bank select |
| Контакт DQ0-DQ15 | Data I/O — Bidirectional data bus |
| Контакт DQS0-DQS1 | Data Strobe — Data strobe for read/write |
| Контакт CK, CK# | Clock — Differential clock input |
| Контакт CKE | Clock Enable — Enables clock |
| Контакт CS# | Chip Select — Selects the device |
| Контакт RAS# | Row Address Strobe — Row address latch |
| Контакт CAS# | Column Address Strobe — Column address latch |
| Контакт WE# | Write Enable — Write enable |
| Контакт ODT | On-Die Termination — Termination control |
| Контакт VDD | Power Supply — Core power supply (1.35V) |
| Контакт VDDQ | I/O Power Supply — I/O power supply (1.35V) |
| Контакт VSS | Ground — Ground |
| Контакт VSSQ | I/O Ground — I/O ground |
Типичное применение
H5TC4G63CFR-xxL подходит для 6 применениеs: Laptop Main Memory, Embedded Systems, Networking Equipment, Industrial Computing, Memory Modules, Consumer Electronics.
Laptop Main Memory
The H5TC4G63CFR-xxL is ideal for laptop main memory due to its 4Gb density and 1.35V low power operation. It provides high bandwidth for multitasking and power efficiency for extended battery life. The 256M x 16 organization supports standard DDR3L memory modules, and the low voltage reduces heat generation, making it suitable for compact laptop designs.
Рекомендуется
Embedded Systems
In embedded systems, the H5TC4G63CFR-xxL provides high-density memory with low power consumption, essential for applications like industrial controllers and IoT gateways. The 1.35V operation reduces power dissipation, and the 96-pin FBGA package is compact for space-constrained designs. The device supports high bandwidth for real-time data processing, and its RoHS compliance meets environmental standards.
Рекомендуется
Networking Equipment
The H5TC4G63CFR-xxL is suitable for networking equipment such as routers and switches, where high bandwidth and low power are critical. The 4Gb density supports large routing tables and packet buffers, while the 1.35V operation reduces power consumption in always-on devices. The device's high-speed interface ensures low latency for data forwarding, and the FBGA package provides good thermal performance.
Рекомендуется
Industrial Computing
For industrial computing, the H5TC4G63CFR-xxL offers reliable memory with low power consumption, suitable for rugged environments. The device operates over a wide temperature range (if specified) and is lead-free, meeting industrial standards. The high bandwidth supports demanding applications like machine vision and process control, and the 96-pin FBGA package ensures robust soldering.
Рекомендуется
Memory Modules
The H5TC4G63CFR-xxL is commonly used in DDR3L memory modules (SO-DIMM, UDIMM) for desktops and servers. Its 4Gb density and x16 organization allow for module capacities of 4GB and higher. The low voltage operation is compatible with DDR3L module specifications, and the device's high bandwidth supports dual-channel configurations for improved performance.
Рекомендуется
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the H5TC4G63CFR-xxL provides high-density memory for multimedia processing. The 1.35V operation reduces power consumption, and the high bandwidth supports HD video streaming and gaming. The device's small FBGA package is ideal for slim designs, and its RoHS compliance meets consumer product regulations.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для H5TC4G63CFR-xxL — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | H5TC4G63CFR-xxA | H5TC4G63CFR-PBA | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-pin FBGA | 96-pin FBGA | 96-pin FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Low voltage operation at 1.35V (против K4B4G1646E-BYMA)
- Lead-free and halogen-free (против MT41K256M16TW-107)
- Same-brand drop-in availability (против K4B4G1646E-BYMA)
Заметки по проектированию
For DDR3L memory, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to ensure signal integrity. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The H5TC4G63CFR-xxL operates at 1.35V, which is lower than standard DDR3. Ensure the power supply provides stable 1.35V with low ripple. Use a dedicated voltage regulator for the memory rail and place bulk capacitors (10uF) near the device to handle transient currents.
Although DDR3L consumes less power than DDR3, thermal management is still important. Ensure adequate airflow or a heatsink if the device is used in high-temperature environments. The FBGA package has a thermal resistance of [DATA_NEEDED: theta_JA], so calculate junction temperature to avoid exceeding the maximum rating.
Информация о соответствии
Lead-free and halogen-free per datasheet. RoHS compliant. No AEC-Q100 qualification for memory components.
