BSC016N06NSATMA1 vs BSC093N15NS5ATMA1 Сравнение
Подробное сравнение бок о бок BSC016N06NSATMA1 от Infineon и BSC093N15NS5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΩ 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC016N06NSATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,65 | $1,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | [DATA_NEEDED: total gate charge Qg] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Диапазон рабочих температур | -55 °C to +150 °C | [DATA_NEEDED: operating temperature range] |
| Корпус | PG-TDSON-8 FL (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Статус RoHS | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 150V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Без галогенов | — | [DATA_NEEDED: halogen free status] |