BSC016N06NSATMA1 vs BSC093N15NS5ATMA1 对比

详细并排对比 BSC016N06NSATMA1 出自 Infineon 和 BSC093N15NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC016N06NSATMA1 BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 ✓ 量产中

规格对比

参数 BSC016N06NSATMA1 BSC093N15NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $1.83
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, TA) 30 A —
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ —
Total Gate Charge (Qg) 71 nC [DATA_NEEDED: total gate charge Qg]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 139 W —
工作温度范围 -55 °C to +150 °C [DATA_NEEDED: operating temperature range]
封装 PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-7)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Gate Drive (recommended) 10 V —
Technology OptiMOS™ 5 OptiMOS 5 150V
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
无卤 — [DATA_NEEDED: halogen free status]

数据手册与资源

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