BSC190N12NS3GATMA1 vs BSZ0901NSIATMA1 Сравнение
Подробное сравнение бок о бок BSC190N12NS3GATMA1 от Infineon и BSZ0901NSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 ✓ Активен
Сравнение характеристик
| Параметр | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,89 | $0,34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A | 25 A |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at Tc | 69 W | — |
| Диапазон рабочих температур | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Корпус | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) | — |
| Body Diode | Integrated | — |
| Статус RoHS | Compliant (JESD-609 Code e3) | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single with built-in diode | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Число выводов | — | 8 |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |