BSC190N12NS3GATMA1 vs BSZ0901NSIATMA1 비교

다음의 상세 나란히 비교: BSC190N12NS3GATMA1 제조: Infineon 및 BSZ0901NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC190N12NS3GATMA1 BSZ0901NSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.89 $0.34
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC190N12NS3GATMA1 BSZ0901NSIATMA1
Technology OptiMOS 3 (N-Channel Trench) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 120 V 30 V
Continuous Drain Current (ID) at Ta=25C 8.6 A 25 A
Continuous Drain Current (ID) at Tc 44 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: total gate charge Qg]
Power Dissipation (PD) at Tc 69 W —
동작 온도 범위 -55C to +150C -55 C to +150 C (typical MOSFET range)
패키지 PG-TDSON-8-1 (SuperSO8 5x6) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
실장 유형 Surface Mount Surface Mount
Avalanche Rated Yes (UIS-tested) —
Body Diode Integrated —
RoHS 상태 Compliant (JESD-609 Code e3) Compliant
MSL 레벨 1 (per JEDEC J-STD-020) —
Configuration Single with built-in diode —
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
핀 수 — 8
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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