BSO613SPVGXUMA1 vs BSO150N03MDGXUMA1 Сравнение
Подробное сравнение бок о бок BSO613SPVGXUMA1 от Infineon и BSO150N03MDGXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ АктивенСравнение характеристик
| Параметр | BSO613SPVGXUMA1 | BSO150N03MDGXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,98 | $0,37 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Корпус | PG-DSO-8-6 (Power-SO-8) | PG-DSO-8 (SO-8 with exposed pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | OptiMOS 3M (30V trench MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| Диапазон рабочих температур | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | 20 V |
| Уровень MSL | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 (unlimited) |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| Число выводов | 8 (6 active, 2 thermal/NC) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSO150N03MDGXUMA1 |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max per channel | — | 9.3 A |
| On-State Resistance (RDS(on)) max | — | 15 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.0 V |
| Power Dissipation (PD) max | — | 1.4 W |
| Channel Configuration | — | Dual N-Channel (independent) |