BSO613SPVGXUMA1 vs BSO150N03MDGXUMA1 对比
详细并排对比 BSO613SPVGXUMA1 出自 Infineon 和 BSO150N03MDGXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ 量产中规格对比
| 参数 | BSO613SPVGXUMA1 | BSO150N03MDGXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.37 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 封装 | PG-DSO-8-6 (Power-SO-8) | PG-DSO-8 (SO-8 with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | OptiMOS 3M (30V trench MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| 工作温度范围 | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | 20 V |
| MSL 等级 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| 引脚数量 | 8 (6 active, 2 thermal/NC) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSO150N03MDGXUMA1 |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max per channel | — | 9.3 A |
| On-State Resistance (RDS(on)) max | — | 15 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.0 V |
| Power Dissipation (PD) max | — | 1.4 W |
| Channel Configuration | — | Dual N-Channel (independent) |