BSS127H6327XTSA2 vs BSL308CH6327XTSA1 Сравнение
Подробное сравнение бок о бок BSS127H6327XTSA2 от Infineon и BSL308CH6327XTSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSS127H6327XTSA2 | BSL308CH6327XTSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,03 | $0,21 |
| FET Type | N-Channel SIPMOS, enhancement mode | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 21 mA (Ta) | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | 500 mW |
| Рабочая температура перехода | -55 C to +150 C | — |
| Корпус | SOT-23-3 (PG-SOT23) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Тип монтажа | Surface Mount | Surface Mount |
| Число выводов | 3 | — |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | — |
| Статус RoHS | Compliant (lead-free) | Compliant |
| Без галогенов | Yes, per IEC 61249-2-21 | Yes (per Infineon product family convention) |
| Уровень MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Диапазон рабочих температур | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |