BSS127H6327XTSA2 vs BSL308CH6327XTSA1 비교

다음의 상세 나란히 비교: BSS127H6327XTSA2 제조: Infineon 및 BSL308CH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSS127H6327XTSA2 BSL308CH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.03 $0.21
FET Type N-Channel SIPMOS, enhancement mode —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) 500 mW
동작 접합 온도 -55 C to +150 C —
패키지 SOT-23-3 (PG-SOT23) PG-TSOP6-6 (TSOP-6, 6 pins)
실장 유형 Surface Mount Surface Mount
핀 수 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
RoHS 상태 Compliant (lead-free) Compliant
할로겐 프리 Yes, per IEC 61249-2-21 Yes (per Infineon product family convention)
MSL 레벨 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
동작 온도 범위 — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes

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