BSZ0901NSIATMA1 vs BSC190N12NS3GATMA1 Сравнение
Подробное сравнение бок о бок BSZ0901NSIATMA1 от Infineon и BSC190N12NS3GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSZ0901NSIATMA1 | BSC190N12NS3GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,34 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | BSC190N12NS3GATMA1 |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS 3 (N-Channel Trench) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 8.6 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Корпус | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Тип монтажа | Surface Mount | Surface Mount |
| Число выводов | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: typical VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typ] |
| Диапазон рабочих температур | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Статус RoHS | Compliant | Compliant (JESD-609 Code e3) |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at Tc | — | 69 W |
| Avalanche Rated | — | Yes (UIS-tested) |
| Body Diode | — | Integrated |
| Уровень MSL | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single with built-in diode |