BSZ0901NSIATMA1 vs BSC190N12NS3GATMA1 对比

详细并排对比 BSZ0901NSIATMA1 出自 Infineon 和 BSC190N12NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSZ0901NSIATMA1 BSC190N12NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.34 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 BSC190N12NS3GATMA1
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET OptiMOS 3 (N-Channel Trench)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 120 V
Continuous Drain Current (ID) at Ta=25C 25 A 8.6 A
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
封装 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TDSON-8-1 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: typical VGS(th)]
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg typ]
工作温度范围 -55 C to +150 C (typical MOSFET range) -55C to +150C
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 状态 Compliant Compliant (JESD-609 Code e3)
Continuous Drain Current (ID) at Tc — 44 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 19 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Power Dissipation (PD) at Tc — 69 W
Avalanche Rated — Yes (UIS-tested)
Body Diode — Integrated
MSL 等级 — 1 (per JEDEC J-STD-020)
Configuration — Single with built-in diode

数据手册与资源

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