EP3C16F256C7 vs EP3C16F256I7N Сравнение
Подробное сравнение бок о бок EP3C16F256C7 от Intel и EP3C16F256I7N от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | EP3C16F256C7 | EP3C16F256I7N |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Device Type | FPGA (Field Programmable Gate Array) | — |
| Device Family | Cyclone III | — |
| Logic Cells / Logic Blocks | 15,408 | — |
| Embedded Memory | 516,096 bit | 56 M9K blocks (504 Kbit) |
| User I/O | 168 | — |
| Total Package Pins | 256 | — |
| Package Type | 256-LBGA (FBGA-256) | — |
| Package Type Designation | Other, LEAD FREE, MS-034, FBGA-256 | — |
| Тип монтажа | Surface mount | — |
| Рабочая температура | -40 °C to +125 °C (-40 °F to +257 °F) | -40C to +100C (industrial, I7) |
| Lead-Free Status | Lead free | — |
| Minimum Operating Supply Voltage | [DATA_NEEDED: minimum operating supply voltage] | — |
| Maximum Operating Supply Voltage | [DATA_NEEDED: maximum operating supply voltage] | — |
| Core Performance | [DATA_NEEDED: core performance rating or maximum operating frequency] | — |
| Embedded Memory Block Count | [DATA_NEEDED: embedded memory block count] | — |
| Internal Block RAM Capacity | 516,096 bit | — |
| PLL Count | [DATA_NEEDED: PLL count] | — |
| Dedicated Multipliers | [DATA_NEEDED: dedicated multiplier count] | — |
| RoHS Compliance | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| REACH Compliance | [DATA_NEEDED: REACH compliance statement] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Family | — | Cyclone III |
| Logic Elements (LEs) | — | 15408 |
| Logic Array Blocks (LABs) | — | 963 |
| Total Memory Bits | — | 516096 |
| Embedded 18x18 Multipliers | — | 56 |
| PLLs | — | 4 |
| Maximum User I/O Pins | — | 168 |
| Корпус | — | 256-ball FBGA (17 mm x 17 mm, 1.0 mm pitch) |
| Supply Voltage (Core) | — | 1.2 V typical |
| Process Technology | — | TSMC 60 nm low-leakage |
| Configuration | — | SRAM-based, requires external config device (EPCS/EPCQ) |
| Lead-Free / Pb-Free | — | Yes (N suffix per JEDEC JESD97) |