IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
Артикул: IAUC100N04S6L025ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.22 | $12,20 |
| 100 | $0.98 | $98,00 |
| 500 | $0.82 | $410,00 |
| 1.000 | $0.72 | $720,00 |
| 5.000 | $0.62 | $3.100,00 |
IAUC100N04S6L025ATMA1 Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field at the gate to modulate current flow between drain and source. In the broader device taxonomy, this part sits within discrete semiconductors -> MOSFETs -> N-channel enhancement-mode power MOSFETs -> low-voltage (sub-75 V) trench MOSFETs designed for high-current switching. The OptiMOS 6 family represents Infineon's sixth-generation 40V trench technology, optimized for the lowest possible RDS(on) x Qg figure of merit at automotive-grade reliability.
Key features of the IAUC100N04S6L025ATMA1 include 2.5 mOhm max RDS(on) at VGS=10 V, 100 A continuous ID at TC=25 C, 62 W power dissipation, and an automotive-grade AEC-Q101 qualification. The SuperSO8 5x6 package provides a Kelvin-source connection at pin 4 that suppresses the gate-loop source-inductance effect, enabling cleaner switching transitions and lower dynamic losses than standard SO-8 devices. It is rated for operation from -55 C to +175 C junction temperature.
Technically, this part uses a shielded-gate trench cell architecture. The IAUC prefix in the part number designates Infineon's automotive-grade product line. The "S6" suffix indicates the OptiMOS 6 technology generation, "L025" denotes the 2.5 mOhm RDS(on) class, and "ATMA1" is the tape-and-reel ordering code. Compared with the prior OptiMOS 5 generation, this device achieves roughly 30% lower RDS(on) and significantly reduced gate charge.
Typical applications include automotive 12 V and 24 V load switching, electric power steering (EPS), brake-by-wire systems, DC-DC converter high-side switches, battery management system (BMS) protection, and motor drive H-bridges. It is also widely deployed in industrial e-fuses, hot-swap controllers, and 48 V mild-hybrid systems where its low conduction loss improves system efficiency.
When designing with this device, pay close attention to PCB layout for thermal management. The PG-TDSON-8 package requires a sufficiently large drain-pad copper pour (typically >= 1 sq inch on a 2 oz outer layer) to keep RDS(on) rise under continuous load. Use a Kelvin-source connection to pin 4 (or leave it floating if not used) to minimize source-inductance-induced switching loss.
This page consolidates Infineon datasheet parameters, distributor stock and pricing tiers, AEC-Q101 qualification status, drop-in alternative MPNs, and practical layout guidance - information not assembled in any single source on the open web.
Аналоги без доработки для IAUC100N04S6L025ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUC100N04S6L025ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, MSL Level, Operating Temperature Range, Drain-Source Voltage (VDS).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUC100N04S6L024
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IAUC100N10S5N040ATMA1
✅ Прямая замена✓ В наличии
$1.62 / шт.
Открыть даташит →IAUCN04S7N012ATMA1
✅ Прямая замена✓ В наличии
$1.18 / шт.
Открыть даташит →IPG20N04S4L08ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.89 / шт.
Открыть даташит →IPD034N06N3GATMA1
✅ Прямая замена✓ В наличии
$0.51 / шт.
Открыть даташит →BSC076N06NS3GATMA1
✅ Прямая замена✓ В наличии
$0.65 / шт.
Открыть даташит →IAUC100N04S6L025ATMA1 Максимальные параметры и электрические характеристики
| Technology | OptiMOS 6 40V trench MOSFET |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm |
| Power Dissipation (PD) at TC=25C | 62 W |
| Рабочая температура перехода | -55 C to +175 C |
| Корпус | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Уровень MSL | 1 (per JEDEC J-STD-020) |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов IAUC100N04S6L025ATMA1
| Контакт 1 | Source — Source connection (also tied to thermal pad vias if used as single-source) |
| Контакт 2 | Source — Source connection |
| Контакт 3 | Source — Source connection |
| Контакт 4 | Kelvin Source — Kelvin source (gate-drive return path, decouples from high-current source inductance) |
| Контакт 5 | Gate — Gate input - connect to gate-driver output |
| Контакт 6 | Drain — Drain connection |
| Контакт 7 | Source — Source connection |
| Контакт 8 | Source — Source connection |
| Контакт PAD | Drain — Thermal pad - drain internally connected, solder to PCB copper pour for heat dissipation |
Область безопасной работы (DC, TC=25C)
Типичное применение
IAUC100N04S6L025ATMA1 подходит для 7 применениеs: Automotive 12V Load Switching, Electric Power Steering (EPS), Battery Management System (BMS) Protection, DC-DC Converter High-Side Switch, Industrial E-Fuse / Hot-Swap Controller, 48V Mild-Hybrid System Power Rail, Brake-by-Wire and Safety-Critical Switch.
Automotive 12V Load Switching
The IAUC100N04S6L025ATMA1 is a natural fit for automotive 12V high-side and low-side load switching due to its 40V VDS rating (with margin over 12V transients), 100A continuous drain current, and 2.5 mOhm RDS(on) that limits conduction loss in always-on rails such as ECUs, body controllers, and lighting drivers. AEC-Q101 qualification allows deployment in passenger vehicle ECUs without further up-screening. Placed between the 12V battery rail and the load with proper TVS clamping for load-dump (ISO 7637-2), it sustains >95% efficiency at typical 5-20A loads where P = I^2 x RDS(on) is the dominant loss term.
Рекомендуется
Electric Power Steering (EPS)
Electric power steering demands an N-channel MOSFET that can switch high currents at high frequency with very low conduction loss, and the IAUC100N04S6L025ATMA1 fits that role in the EPS motor-drive H-bridge. With 2.5 mOhm RDS(on), it minimizes I^2R losses in the steering assist motor, reducing heatsink requirements and improving fuel economy by 0.2-0.5% versus higher-RDS(on) alternatives. The 100A rating covers peak-assist surges, and AEC-Q101 qualification supports ASIL-D system integration. Used as the low-side switch in a 3-phase inverter, it pairs with gate drivers such as the IRF7832TRPBF.
Рекомендуется
Battery Management System (BMS) Protection
In a 12V or 48V mild-hybrid battery management system, the IAUC100N04S6L025ATMA1 acts as the main disconnect MOSFET or cell-balancing switch, where its 2.5 mOhm RDS(on) keeps conduction loss during continuous balancing currents below 0.1W per ampere, preserving battery capacity. The 40V VDS rating comfortably covers 48V bus transients clamped below 60V, and the 100A rating handles inrush from capacitive loads. AEC-Q101 and -55C to +175C junction temperature range ensure reliability in underhood battery enclosures. Deployed between the cell stack and the DC bus with a TVS clamp, it provides fast short-circuit isolation under fault conditions.
Рекомендуется
DC-DC Converter High-Side Switch
In a 12V-to-3.3V or 12V-to-5V buck converter delivering 30-50A, the IAUC100N04S6L025ATMA1 serves as the main high-side switching element. Its low Qg (typical OptiMOS 6 figure for this class) reduces gate-drive losses at 200-500 kHz switching frequencies, and 2.5 mOhm RDS(on) keeps the high-side R^2 conduction duty-cycle loss manageable. The SuperSO8 package offers a Kelvin-source connection (pin 4) that prevents source-inductance-induced turn-on, a critical feature for hard-switched topologies. Pairs naturally with Infineon EiceDriver gate drivers in 48V-to-12V or 12V-to-low-voltage automotive power stages.
Рекомендуется
Industrial E-Fuse / Hot-Swap Controller
The IAUC100N04S6L025ATMA1 functions as the main pass element in an industrial e-fuse or hot-swap controller protecting 24V or 48V backplanes. Its 2.5 mOhm RDS(on) limits the I^2R drop during steady-state operation, and the 100A continuous rating covers the full hot-swap inrush envelope of large capacitive loads. Operating junction temperature up to 175C enables compact fan-less designs in sealed enclosures. When paired with a hot-swap controller IC and current-sense amplifier, it provides sub-microsecond fault isolation with programmable current limit and inrush ramp.
Рекомендуется
48V Mild-Hybrid System Power Rail
In a 48V mild-hybrid electrical system, the IAUC100N04S6L025ATMA1 operates as the buck-converter high-side switch stepping 48V down to 12V for traditional loads. The 40V VDS rating limits direct deployment, so this part serves the 12V sub-rail after a primary-side 48V buck. Its 2.5 mOhm RDS(on) keeps the 12V rail's conduction loss below 0.2W per ampere, and 100A current capability supports the entire vehicle accessory load (lighting, HVAC blower, electric water pump). AEC-Q101 and 175C junction rating satisfy the underhood environment. Pair with the IPN95R1K2P7ATMA1 (950V SiC) on the primary 48V-to-12V stage.
Рекомендуется
Brake-by-Wire and Safety-Critical Switch
Brake-by-wire electro-mechanical boosters require the highest-reliability switching elements, and the IAUC100N04S6L025ATMA1's AEC-Q101 qualification plus 175C junction temperature make it suitable for the motor-drive stage that actuates the brake piston. Its 100A current rating handles peak brake-assist transients, and 2.5 mOhm RDS(on) keeps continuous-duty loss low to prevent thermal runaway. The SuperSO8 PG-TDSON-8 package provides a Kelvin-source pin that suppresses switching noise in this safety-critical loop. Used with a hardware ASIL-D gate driver, it forms the actuation switch in fail-operational brake architectures.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUC100N04S6L025ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUC100N04S6L024 | IAUC100N10S5N040ATMA1 | IAUCN04S7N012ATMA1 | IPG20N04S4L08ATMA1 | IPD034N06N3GATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Drain-Source Voltage VDS max | 40 V | 40 V | 100 V | 40 V | 40 V | 60 V | 60 V |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | 2.4 mOhm | 4.0 mOhm | 1.2 mOhm | 8.0 mOhm | 3.4 mOhm | 7.6 mOhm |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 7 | OptiMOS 4 | OptiMOS 3 | OptiMOS 3 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Ключевые отличия
- OptiMOS 6 generation with 30% lower RDS(on) than OptiMOS 5 (против IAUC100N10S5N040ATMA1)
- Highest current rating in OptiMOS 6 40V family (против IPD034N06N3GATMA1)
- Lower RDS(on) class than IPG20N04S4L08ATMA1 (против IPG20N04S4L08ATMA1)
Заметки по проектированию
Estimated: at 100A continuous ID with RDS(on) = 2.5 mOhm hot (~3.5 mOhm at 175C junction), conduction loss is P = I^2 x RDS(on) = 100^2 x 0.0035 = 35W. The PG-TDSON-8 with 1 sq-inch 2oz copper pour gives theta_JA ~50 C/W, yielding a junction temperature rise of 50 x 35 = 1750C above ambient - clearly above the 175C rating. For continuous 100A operation, use >= 4 sq inches of 2 oz copper on top layer plus thermal vias to an internal 2 oz plane, dropping theta_JA to ~25 C/W (a 875C rise). Derate continuous current to ~60A for 1 sq inch, or pulse ratings apply above that.
The PG-TDSON-8 (SuperSO8) thermal pad must be soldered to a copper pour on the PCB to meet the 62 W power dissipation rating. Use an array of thermal vias (>= 9 vias, 0.3 mm diameter, 1 mm pitch) under the pad to conduct heat to internal copper planes. Source pins 1, 2, 3, 7, 8 should all be soldered to wide copper pours to handle 100A without trace-heating issues. The Kelvin-source pin (4) must connect directly to the gate-driver ground return, NOT the high-current source path - otherwise switching losses increase by 20-30%.
Minimize the gate-loop inductance by routing the gate trace and Kelvin-source return directly above each other (microstrip-style) with minimal loop area. High di/dt switching transients (in the order of 1-5 kA/us for this class of MOSFET) generate V = L x di/dt spikes that can exceed VGS rating if the gate loop inductance exceeds 5 nH. Place the gate-driver IC within 5 mm of the gate pin and use a 10 ohm gate resistor with a ferrite bead to dampen ringing. Keep the high-current drain loop compact to limit source-inductance-induced turn-on.
Do not connect pin 4 (Kelvin source) to the high-current source PCB trace - this defeats the purpose of the Kelvin connection and causes the gate-drive return to share inductance with the main current path. Do not exceed VGS = +/-20 V absolute maximum, even transiently. Do not operate above VDS = 40 V including avalanche from unclamped inductive switching. Always include a TVS diode (e.g. 33V or 36V SMBJ) across drain-source for inductive-load switching applications such as motor drive and solenoid driving.
Информация о соответствии
AEC-Q101 qualified for automotive applications. RoHS and REACH compliant per Infineon product page. Lead-free (SnAgCu) terminations. Halogen-free mold compound. Conflict-mineral declaration compliant per Infineon supplier program.
