IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
Артикул: IAUC120N04S6N009ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.45 | $3,45 |
| 10 | $3.05 | $30,50 |
| 100 | $2.55 | $255,00 |
| 500 | $2.15 | $1.075,00 |
| 1.000 | $1.85 | $1.850,00 |
| 3.000 | $1.6 | $4.800,00 |
IAUC120N04S6N009ATMA1 Обзор
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or interrupt current in power conversion circuits. N-channel MOSFETs such as this one are the dominant building blocks of buck converters, motor drives, and OR-ing hot-swap controllers, sitting hierarchically under discrete semiconductors, then power MOSFETs, then automotive-grade power switches. The IAUC120N04S6N009ATMA1 occupies the low-voltage, very-low-R<sub>DS(on)</sub> tier of that family, where conduction loss—not switching loss—dominates total dissipation.
Key differentiators include 0.9 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, 120 A continuous drain current at 25 °C case, 40 V drain-source breakdown voltage, and an optimized SS08 leadless package footprint. According to the Infineon datasheet, the die is capable of carrying 300 A at 25 °C when limited only by package thermal resistance (R<sub>thJC</sub> = 1 K/W). The device is also characterized for low gate charge, low Q<sub>rr</sub>, and an operating junction temperature range of -55 °C to +175 °C.
OptiMOS 6 technology uses a shielded-gate trench architecture that achieves a superior figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) versus older OptiMOS 5 generations. This makes the part well-suited to high-frequency synchronous rectification in 12 V/24 V automotive systems where every milliohm of conduction loss translates directly into wasted heat, reduced efficiency, and the need for heavier copper or heatsinking on the PCB.
Typical applications include 12 V and 24 V automotive ECU power stages, battery management system (BMS) protection FETs, DC-link disconnect switches in mild-hybrid 48 V systems, electric power steering (EPS) controllers, and high-current USB-PD / eFuse loads. The wide safety margin between 40 V V<sub>DSS</sub> rating and 24 V automotive load-dump transients also makes it usable in truck and industrial 24 V bus systems.
When designing with this part, place gate drive resistors of 10-47 Ω close to the gate pin to control ringing, and ensure the source-sense (Kelvin) connection is used when available. For 100 % duty-cycle hot-swap service, derate continuous current to 80 A or add copper pour to keep junction rise below 100 °C. The exposed drain pad must be soldered to at least 6 cm² of copper for the datasheet thermal numbers to hold.
This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для IAUC120N04S6N009ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUC120N04S6N009ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Automotive Qualification, Technology, Operating Temperature Range, Product Family.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUC120N04S6L009ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.65 / шт.
Открыть даташит →IAUCN04S7N015GATMA1
✅ Прямая замена✓ В наличии
$2.21 / шт.
Открыть даташит →IAUCN04S7N019GATMA1
✅ Прямая замена✓ В наличии
$0.82 / шт.
Открыть даташит →IAUCN04S7L050HATMA1
✅ Прямая замена✓ В наличии
$0.83 / шт.
Открыть даташит →NTMFS0D9N04X
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ISC015N06NM5LF2ATMA1
✅ Прямая замена✓ В наличии
$2.21 / шт.
Открыть даташит →IAUC120N04S6N009ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 40V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D, Tc) | 120 A |
| R_DS(on) max @ V_GS=10V | 0.9 mΩ |
| Power Dissipation (Tc) | 150 W |
| Thermal Resistance R_thJC max | 1.0 K/W |
| Рабочая температура перехода | -55 °C to +175 °C |
| Корпус | PG-TDSON-8-33 (5x6 mm) |
| Тип монтажа | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Уровень MSL | 1 |
| RoHS | Compliant |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) |
Конфигурация выводов IAUC120N04S6N009ATMA1
| Контакт 1 | Source — Source connection (low-side reference) |
| Контакт 2 | Source — Source connection |
| Контакт 3 | Source — Source connection |
| Контакт 4 | Source — Source connection (Kelvin sense) |
| Контакт 5 | Gate — Gate drive input |
| Контакт 6 | Drain — Drain connection (auxiliary) |
| Контакт 7 | Drain — Drain connection (auxiliary) |
| Контакт 8 | Drain — Drain connection (auxiliary) |
| Контакт 9 | Drain (EP) — Exposed pad - main drain thermal/electrical connection |
Область безопасной работы (DC)
Типичное применение
IAUC120N04S6N009ATMA1 подходит для 6 применениеs: Automotive 12V/24V Hot-Swap and eFuse, Battery Management System (BMS) Protection FET, Electric Power Steering (EPS) Controller, 48V Mild-Hybrid DC-DC Converter, USB-PD and High-Current Automotive USB Charger, Industrial 24V Brushed DC Motor Drive.
Automotive 12V/24V Hot-Swap and eFuse
The IAUC120N04S6N009ATMA1's 0.9 mΩ R_DS(on) and 120 A continuous drain current make it ideal for automotive 12V/24V hot-swap and electronic fuse (eFuse) protection circuits. In these applications the MOSFET operates at 100% duty cycle as a series protection element, so conduction loss dominates: I²R at 80 A through 0.9 mΩ dissipates roughly 5.8 W. The AEC-Q101 qualification and 40 V V_DSS rating provide margin above 24 V load-dump transients clamped at 35 V, while the PG-TDSON-8-33 footprint with 1 K/W R_thJC allows direct attachment to a 6 cm² copper pour. Compared to a discrete P-channel hot-swap FET, this N-channel part reduces both cost and footprint by approximately 30%.
Рекомендуется
Battery Management System (BMS) Protection FET
In 12V/48V lithium-ion battery management systems, the IAUC120N04S6N009ATMA1 is deployed as the high-current charge/discharge protection FET. The 120 A continuous rating accommodates 10 kW peak power transfer typical of mild-hybrid 48V systems, while 40 V V_DSS exceeds the maximum pack voltage with comfortable margin. The AEC-Q101 qualification is mandatory for OEM battery packs, and the 0.9 mΩ on-resistance reduces I²R losses by roughly 30% versus the previous-generation OptiMOS 5 parts, which translates directly into longer driving range per charge cycle. Source-sense (Kelvin) connection is recommended for current-sense accuracy.
Рекомендуется
Electric Power Steering (EPS) Controller
Electric power steering systems demand high peak torque currents with absolute reliability, making the IAUC120N04S6N009ATMA1 an excellent choice for the EPS motor-drive H-bridge or three-phase inverter. The 0.9 mΩ R_DS(on) minimizes heat generation in the confined steering-column environment, while the 175 °C maximum junction temperature handles the worst-case stall-current thermal stress. AEC-Q101 qualification is required by all major Tier-1 EPS suppliers, and the 5x6 mm footprint keeps PCB area compact. The device is typically paired with a dedicated three-phase gate driver in a 48 V mild-hybrid EPS architecture.
Рекомендуется
48V Mild-Hybrid DC-DC Converter
Mild-hybrid 48V systems require DC-DC converters stepping 48V down to 12V at 2-3 kW continuous power levels, and the IAUC120N04S6N009ATMA1 serves as the synchronous rectifier low-side FET in these converters. Its 0.9 mΩ R_DS(on) directly improves efficiency—every milliohm saved at 200 A output current reduces conduction loss by 40 W. The 40 V V_DSS comfortably exceeds the 12V rail transient range while the 175 °C junction rating handles worst-case thermal load. OptiMOS 6's low Qrr further reduces switching loss at the 100-200 kHz typical switching frequency, enabling higher power density.
Рекомендуется
USB-PD and High-Current Automotive USB Charger
Automotive USB Power Delivery (USB-PD 3.1) chargers delivering 100W (20V/5A) or higher use the IAUC120N04S6N009ATMA1 as the load-switch FET providing cable-compensation and over-current protection. Its 120 A rating far exceeds the 5A PD requirement but allows operation across multiple Type-C ports in parallel without thermal shutdown. The 0.9 mΩ on-resistance keeps full-load voltage drop below 5 mV, preserving PD voltage tolerance. AEC-Q101 qualification satisfies OEM automotive electronics requirements, and the 5x6 mm footprint simplifies integration into small connector modules.
Рекомендуется
Industrial 24V Brushed DC Motor Drive
Industrial 24V brushed DC motor drives benefit from the IAUC120N04S6N009ATMA1's low R_DS(on) and high continuous current rating for H-bridge switching. The 40 V V_DSS comfortably handles the inductive kick of a 24V motor at PWM frequencies up to 25 kHz. Although optimized for automotive, the part is also widely used in industrial AGV drives, conveyor control, and solenoid drivers where its 175 °C junction rating and 1 K/W R_thJC enable fan-less operation. The PG-TDSON-8-33 footprint fits the same land pattern as several 40V competitors, simplifying dual-sourcing.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUC120N04S6N009ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUC120N04S6L009ATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7L050HATMA1 | NTMFS0D9N04X | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | DFN-5x6 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| V_DSS (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V | 60 V |
| R_DS(on) max @ 10V (mΩ) | 0.9 mΩ | ~1.0 mΩ | 1.5 mΩ | 1.9 mΩ | 5.0 mΩ | 0.9 mΩ | 1.5 mΩ |
| Continuous I_D @ Tc (A) | 120 A | 120 A | 100 A | 90 A | 50 A | 120 A | 100 A |
| Power Dissipation (W) | 150 W | 150 W | 125 W | 110 W | 75 W | 150 W | 125 W |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | onsemi T6 | OptiMOS 5 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Ключевые отличия
- Lowest R_DS(on) in PG-TDSON-8-33 OptiMOS 6 family (против IAUC120N04S6L009ATMA1)
- OptiMOS 6 generation advantage over OptiMOS 7 alternatives (против IAUCN04S7N015GATMA1)
- Cross-brand drop-in option with same R_DS(on) class (против NTMFS0D9N04X)
Заметки по проектированию
Estimated: With R_thJC = 1 K/W and 6 cm² of 70 μm copper on a 40x40x1.5 mm FR4 PCB (per Infineon datasheet test conditions), continuous conduction of 80 A at 0.9 mΩ dissipates roughly 5.8 W, yielding a junction-temperature rise of approximately 5.8 K above 25 °C ambient. For continuous operation above 100 A, increase PCB copper to at least 10 cm² with thermal via array under the exposed pad to keep junction temperature below 100 °C in 85 °C ambient.
Place the gate-drive resistor (10-47 Ω) within 5 mm of the gate pin to suppress parasitic ringing from the gate-source capacitance. Use a separate Kelvin source connection (pin 4) for the gate return when the source current exceeds 50 A to prevent Vgs degradation caused by source-inductance voltage drop. The exposed drain pad must be soldered to at least 6 cm² of copper with a 4x4 thermal via array (0.3 mm drill, 1.0 mm pitch) to meet the R_thJC = 1 K/W datasheet specification.
Do not exceed 40 V V_DSS during load-dump transients—clamp with a TVS diode (e.g., 33 V SMAJ33CA) when used directly across a 24V automotive bus. The 120 A continuous current rating assumes Tc = 25 °C; in real applications derate to roughly 80 A or 65% of the datasheet rating. Do not connect the source sense (pin 4) to the main source PCB trace—route it as a dedicated Kelvin trace to the gate-driver ground to prevent Vgs shift during high di/dt switching.
For PWM switching above 50 kHz, add a small RC snubber (10 Ω + 1 nF) across drain-source to limit voltage overshoot from parasitic inductance. The OptiMOS 6 family has very low Qrr (reverse recovery charge), but at 100 A turn-off the di/dt can still cause 10-15 V overshoot on layouts exceeding 20 nH total loop inductance. Use a 4-layer PCB with dedicated power and return planes to minimize the drain-source switching loop area.
Информация о соответствии
AEC-Q101 automotive qualified per Infineon product page. AEC-Q100 (automotive IC) does not apply to this discrete MOSFET; the relevant automotive standard is AEC-Q101. RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free confirmed by manufacturer datasheet marking.
