IAUC120N04S6N010ATMA1 vs IAUC120N04S6N009ATMA1 Сравнение
Подробное сравнение бок о бок IAUC120N04S6N010ATMA1 от Infineon и IAUC120N04S6N009ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ АктивенInfineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC120N04S6N010ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,68 | $1,60 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | — |
| Корпус | PG-TDSON-8-34 (5x6 mm leadless) | PG-TDSON-8-33 (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Диапазон рабочих температур | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | — |
| Уровень MSL | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | 1 |
| Статус RoHS | Compliant | — |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Импульсный ток стока | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |