IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
Артикул: IAUCN04S7N027GATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.98 | $98,00 |
| 500 | $0.84 | $420,00 |
| 1.000 | $0.72 | $720,00 |
IAUCN04S7N027GATMA1 Обзор
A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled three-terminal switch that conducts current between drain and source when a sufficient gate-source voltage is applied. N-channel MOSFETs use electrons as the primary charge carriers and are favored for low-side switching, synchronous rectification, and half-bridge configurations because their lower Rds(on) per unit silicon area makes them more efficient than equivalent P-channel parts. The 40 V class targets 12 V automotive subsystems, 24 V industrial buses, USB-PD power paths, and small brushless DC motor drives.
Key differentiating specifications include a 2.67 mOhm maximum Rds(on), 117 A continuous drain current, 70 W power dissipation at Tc, and compatibility with both IMS substrates and legacy FR-4 PCB assemblies. The SSO4G 5x6 footprint provides a Kelvin-source connection and a large exposed drain pad that minimizes package resistance and maximizes heat transfer to the PCB copper.
The OptiMOS 7 cell architecture uses a refined trench-gate structure with lower gate charge and output capacitance than prior generations, reducing switching losses by up to 30 percent at 25 kHz to 100 kHz PWM frequencies. This makes the IAUCN04S7N027GATMA1 well suited for high-frequency synchronous rectification in isolated DC-DC converters and 48 V mild-hybrid systems stepping down to 12 V rails.
Typical applications include 12 V automotive ECU power switching, synchronous rectification in isolated DC-DC converters, USB-PD and battery management system (BMS) protection circuits, and high-current BLDC motor half-bridges. The wide gate-source voltage range (typically +/-20 V abs max) simplifies driver compatibility with standard gate drivers.
When designing with this part, ensure the gate driver can source and sink at least 1 A to charge the input capacitance quickly and avoid thermal runaway from switching losses. Use a Kelvin-source connection to isolate the gate loop from the high-current source path for clean gate waveforms in high-di/dt applications.
This page synthesizes distributor pricing, drop-in alternatives from the same SSO4G footprint family, and practical PCB layout guidance not found in the standalone manufacturer datasheet.
Аналоги без доработки для IAUCN04S7N027GATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUCN04S7N027GATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, Series, Automotive Qualification.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUCN04S7N019GATMA1
✅ Прямая замена✓ В наличии
$0.82 / шт.
Открыть даташит →IAUC100N04S6N028ATMA1
✅ Прямая замена✓ В наличии
$0.42 / шт.
Открыть даташит →IAUCN08S7N024ATMA1
✅ Прямая замена✓ В наличии
$0.89 / шт.
Открыть даташит →IAUCN04S7L050HATMA1
✅ Прямая замена✓ В наличии
$0.83 / шт.
Открыть даташит →IAUC60N10S5L110ATMA1
✅ Прямая замена✓ В наличии
$0.66 / шт.
Открыть даташит →IAUCN04S7N027GATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds max) | 40 V |
| Continuous Drain Current (Id) | 117 A |
| On-Resistance (Rds(on) max) | 2.67 mOhm |
| Power Dissipation (Pd) | 70 W (Tc) |
| Корпус / Типоразмер | PG-THSOG-4-1 (SSO4G 5x6) |
| Тип монтажа | Surface Mount |
| Qualification | Automotive |
| Статус RoHS | Compliant |
| Substrate Compatibility | IMS substrates and legacy FR-4 |
Конфигурация выводов IAUCN04S7N027GATMA1
| Контакт 1 | GATE — Gate drive input |
| Контакт 2 | SENSE (Kelvin) — Kelvin source connection for gate-drive return (electrically tied to pin 3) |
| Контакт 3 | SOURCE — Source power terminal (high-current) |
| Контакт 4 | DRAIN — Drain terminal and exposed thermal pad |
Область безопасной работы (DC, Tc=25C)
Типичное применение
IAUCN04S7N027GATMA1 подходит для 6 применениеs: 12V Automotive ECU Power Switching, Synchronous Rectification in 48V-to-12V DC-DC Converters, USB-PD Power Path Protection, Brushless DC (BLDC) Motor Half-Bridge, Battery Management System (BMS) Protection, Hot-Swap / E-Fuse for 24V Industrial Systems.
12V Automotive ECU Power Switching
The IAUCN04S7N027GATMA1's 40 V Vds rating and 117 A continuous drain current make it ideal for 12 V automotive ECU high-side and low-side switching, where it can handle inrush currents from solenoids, motors, and incandescent lamp loads. The 2.67 mOhm maximum Rds(on) limits steady-state conduction losses to roughly 3.7 W at 37 A continuous load, keeping the junction temperature rise within safe margins on a properly designed IMS substrate. Placed between the 12 V battery rail and the load, it provides solid-state switching that replaces mechanical relays with no moving parts. Unlike an electromechanical relay it adds no coil current draw and operates silently, but requires a gate driver circuit.
Рекомендуется
Synchronous Rectification in 48V-to-12V DC-DC Converters
The IAUCN04S7N027GATMA1 serves as the synchronous rectifier (low-side) MOSFET in isolated and non-isolated 48 V-to-12 V DC-DC converters for mild-hybrid electric vehicles. Its 2.67 mOhm Rds(on) and OptiMOS 7 low-Qg / low-Qoss cell architecture reduce switching losses by up to 30 percent compared to OptiMOS 6 predecessors, improving full-load efficiency by 1.5-2.5 percent at 100 kHz switching frequency. The 117 A continuous rating supports converters delivering up to 1.4 kW continuous. Placed across the synchronous rectifier position, it competes with the primary switch's freewheeling diode - the lower Rds(on) cuts conduction loss substantially. The SSO4G Kelvin-source pin is critical here because the high-di/dt switching edges would otherwise couple switching noise into the gate drive.
Рекомендуется
USB-PD Power Path Protection
The IAUCN04S7N027GATMA1 protects USB-PD power paths in automotive head units and USB-C chargers from short-circuit and overcurrent events. Its 40 V Vds comfortably exceeds the 20 V maximum USB-PD EPR voltage with 2x derating margin, and the 117 A continuous rating supports 240 W EPR (28 V at 8.6 A) power delivery. The 2.67 mOhm Rds(on) adds only 0.07 W of conduction loss at full 8.6 A load, well within thermal limits. Placed between the source voltage rail and the VBUS output, it acts as a hot-swap / eFuse element. Compared to a dedicated hot-swap controller IC it offers lower Rds(on) but lacks integrated current sensing and fault timing.
Рекомендуется
Brushless DC (BLDC) Motor Half-Bridge
The IAUCN04S7N027GATMA1 forms one half-bridge position in a 3-phase BLDC motor drive for automotive cooling fans, water pumps, and EPS systems. Each phase uses two MOSFETs (high-side + low-side) so a 3-phase drive needs six IAUCN04S7N027GATMA1 devices. The 117 A continuous current supports motors drawing up to 80 A peak phase current with proper thermal design, and the 40 V Vds handles back-EMF spikes from 12 V motors with adequate margin. The SSO4G 5x6 package allows compact 6-MOSFET layouts on IMS substrates for high power density. Placed in the half-bridge with a 3-phase gate driver, it switches at 20-50 kHz PWM frequency - OptiMOS 7's low switching loss keeps driver losses manageable.
Рекомендуется
Battery Management System (BMS) Protection
The IAUCN04S7N027GATMA1 serves as the charge / discharge MOSFET in 12 V automotive BMS modules, disconnecting the battery from the load during fault conditions. Its 117 A continuous rating handles 12 V cranking pulses up to 1000 A peak (with appropriate TVS protection for the inrush), and the 40 V Vds covers jump-start transients up to 24 V. The 2.67 mOhm Rds(on) contributes only 0.06 V drop at 23 A continuous discharge current, well within the 0.1 V typical BMS budget. Placed in series with the battery terminal, it acts as a solid-state main contactor. Unlike a mechanical contactor it has no arc risk but requires careful thermal management at high continuous currents.
Рекомендуется
Hot-Swap / E-Fuse for 24V Industrial Systems
The IAUCN04S7N027GATMA1 implements a hot-swap or electronic fuse function in 24 V industrial PLCs, sensor hubs, and rack-mount equipment. Its 40 V Vds gives 67 percent derating margin over a 24 V nominal rail, and the 117 A rating handles inrush transients from large bulk capacitors downstream. The 2.67 mOhm Rds(on) means the steady-state voltage drop is only 0.13 V at 50 A, well below the 0.25 V typical hot-swap budget. Placed between the input rail and the downstream DC-DC converter, it limits inrush current via gate slew-rate control. Compared to a dedicated hot-swap IC, this MOSFET offers higher current density at lower cost but requires external current-sense and gate-control circuitry.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUCN04S7N027GATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUCN04S7N019GATMA1 | IAUC100N04S6N028ATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|---|---|
| Package | PG-THSOG-4-1 (SSO4G 5x6) | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Vds (Drain-Source Voltage) | 40 V | 40 V | 40 V | 80 V |
| Rds(on) max | 2.67 mOhm | 1.9 mOhm | 2.8 mOhm | 2.4 mOhm |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 7 |
| Automotive Qualified | Yes | Yes | Yes | Yes |
| Kelvin Source Pin | Yes | Yes | Yes | Yes |
| Substrate Compatibility | IMS + FR-4 | IMS + FR-4 | IMS + FR-4 | IMS + FR-4 |
Ключевые отличия
- OptiMOS 7 generation delivers 30% lower switching loss than OptiMOS 6 at 100 kHz (против IAUC100N04S6N028ATMA1)
- Lowest Rds(on) in this voltage class with 117 A continuous current (против IAUCN04S7N019GATMA1)
- Kelvin-source pin enables clean switching at high di/dt (против IAUCN04S7L050HATMA1)
Заметки по проектированию
Estimated: at full 117 A continuous drain current with Rds(on) of 2.67 mOhm, conduction loss is approximately 36.5 W. The PG-THSOG-4-1 package has a junction-to-case thermal resistance that allows 70 W dissipation at Tc, but only with substantial PCB copper or IMS substrate cooling. For continuous operation above 30 A, design for at least 6 square centimeters of 2 oz copper per device or use an IMS substrate with high thermal conductivity dielectric. Without adequate cooling the junction temperature will exceed 150 C and trigger thermal shutdown.
Use the Kelvin-source pin (pin 2) as the gate-drive return path, not the power source (pin 3). This isolates the high-current source path from the gate loop, preventing switching noise from coupling into Vgs and causing shoot-through or gate oscillation. Place a 10 Ohm gate resistor close to pin 1 to dampen ringing. Use multiple vias on the exposed drain pad to maximize heat transfer to inner PCB copper layers; recommended pattern is 9-16 filled vias on a 1.0 mm pitch.
Keep the gate-drive loop area (gate resistor -> pin 1 -> pin 2 -> gate driver GND) under 1 square centimeter to minimize parasitic inductance. Avoid running the high-current drain-source loop near sensitive analog signal traces; the high-di/dt switching transitions (up to 5 A/ns) can inject noise into nearby circuits. For multi-MOSFET parallel operation (e.g., in high-current half-bridges), use symmetrical gate-drive routing and matched Rds(on) bins to ensure balanced current sharing and prevent thermal runaway between paralleled devices.
Do not exceed the absolute maximum Vgs rating (typically +/-20 V for OptiMOS 7); overshoot above this will permanently damage the gate oxide. Add a TVS diode or gate-source Zener clamp (e.g., 16 V) if the gate driver can produce transients above 18 V during fault conditions. Do not operate continuously near the SOA boundary at low Vds (linear region) - the IAUCN04S7N027GATMA1 is optimized for fully-on (saturated) switching, not linear-mode operation.
Информация о соответствии
AEC-Q100 qualified per Infineon automotive OptiMOS 7 family. RoHS and REACH compliant. Lead-free and halogen-free per Infineon product environmental compliance documentation.
