IPB120N04S402ATMA1 vs IPC100N04S5L1R5ATMA1 Сравнение
Подробное сравнение бок о бок IPB120N04S402ATMA1 от Infineon и IPC100N04S5L1R5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
IPB120N04S402ATMA1 ✓ АктивенInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPB120N04S402ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,85 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS-5 40 V |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, TC) | 120 A | — |
| Power Dissipation (PD, TC) | 158 W | — |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΩ | — |
| Корпус | PG-TO263-3 (D2PAK) | PG-TDSON-8-34 (SS08 leadless) |
| Тип монтажа | Surface Mount | Surface Mount |
| Число выводов | 3 (2 + Tab) | — |
| Диапазон рабочих температур | -55 °C to +175 °C | -55C to +175C |
| Maximum Junction Temperature | 175 °C | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rating | 100% Avalanche Tested | — |
| Уровень чувствительности к влаге (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Уровень MSL | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Статус RoHS | — | Compliant (Green Product) |
| Avalanche Tested | — | 100% |