IPB120N04S402ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison

Detailed side-by-side comparison of IPB120N04S402ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB120N04S402ATMA1 IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 βœ“ Active
Infineon
IPC100N04S5L1R5ATMA1

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 βœ“ Active

Specification Comparison

Parameter IPB120N04S402ATMA1 IPC100N04S5L1R5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-5 40 V
FET Type N-Channel, Enhancement Mode β€”
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID, TC) 120 A β€”
Power Dissipation (PD, TC) 158 W β€”
RDS(on) (typ @ VGS=10 V) 1.8 mΞ© β€”
Package PG-TO263-3 (D2PAK) PG-TDSON-8-34 (SS08 leadless)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55C to +175C
Maximum Junction Temperature 175 Β°C β€”
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] β€”
Avalanche Energy Rating 100% Avalanche Tested β€”
Moisture Sensitivity Level (MSL) MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) β€”
Automotive Qualification AEC-Q101 β€”
RoHS Compliance Green Product (RoHS compliant) β€”
Polarity / Channel Type β€” N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max β€” 40 V
Gate-Source Voltage (VGS) Max β€” 20 V
Continuous Drain Current (ID) at Tc=25C β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C β€” 115 W
On-Resistance RDS(on) at VGS=10 V β€” 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V β€” 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ]
MSL Level β€” MSL1 (260C peak reflow)
AEC-Q101 Qualified β€” Yes
RoHS Status β€” Compliant (Green Product)
Avalanche Tested β€” 100%

Datasheets & Resources

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