IPB120N04S402ATMA1 vs IPC100N04S5L1R5ATMA1 비교
다음의 상세 나란히 비교: IPB120N04S402ATMA1 제조: Infineon 및 IPC100N04S5L1R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB120N04S402ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.85 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS-5 40 V |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, TC) | 120 A | — |
| Power Dissipation (PD, TC) | 158 W | — |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΩ | — |
| 패키지 | PG-TO263-3 (D2PAK) | PG-TDSON-8-34 (SS08 leadless) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (2 + Tab) | — |
| 동작 온도 범위 | -55 °C to +175 °C | -55C to +175C |
| Maximum Junction Temperature | 175 °C | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rating | 100% Avalanche Tested | — |
| 습도 민감도 레벨 (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| MSL 레벨 | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| RoHS 상태 | — | Compliant (Green Product) |
| Avalanche Tested | — | 100% |