IPC50N04S5L5R5ATMA1 vs BSC011N03LSTATMA1 Сравнение
Подробное сравнение бок о бок IPC50N04S5L5R5ATMA1 от Infineon и BSC011N03LSTATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPC50N04S5L5R5ATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | NRND |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,36 | $1,55 |
| Тип транзистора | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Диапазон рабочих температур | -55 °C to +175 °C | — |
| Корпус | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| Рабочая температура перехода | — | -55C to +150C |
| Technology | — | Trench MOSFET |
| Configuration | — | Single with built-in diode |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Статус RoHS | — | Compliant |