IPC50N04S5L5R5ATMA1 vs BSC011N03LSTATMA1 Comparison
Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and BSC011N03LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveInfineon
BSC011N03LSTATMA1
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC011N03LSTATMA1 NrndSpecification Comparison
| Parameter | IPC50N04S5L5R5ATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $1.55 |
| Transistor Type | N-Channel MOSFET | β |
| Mode | Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID, Tc) | 50 A | β |
| Maximum Drain Current (silicon-limited, 25 Β°C) | 60 A | β |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΞ© | β |
| Gate Threshold VGS(th) | Logic Level (enhancement at β€ 4.5 V VGS) | β |
| Power Dissipation (Tc) | 42 W | β |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Avalanche Rating | 100 % Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 39 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | β | 2 V |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) typ | β | 72 nC |
| Power Dissipation at TA=25C | β | 3 W |
| Power Dissipation at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +150C |
| Technology | β | Trench MOSFET |
| Configuration | β | Single with built-in diode |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| RoHS Status | β | Compliant |