IPD042P03L3GATMA1 vs IPD068P03L3GATMA1 Сравнение
Подробное сравнение бок о бок IPD042P03L3GATMA1 от Infineon и IPD068P03L3GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPD042P03L3GATMA1 | IPD068P03L3GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,28 | $0,51 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | — |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| Диапазон рабочих температур | -55°C to +175°C (TJ) | -55C to +175C (junction) |
| Корпус | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Technology | OptiMOS™ P (Trench) | Trench MOSFET (OptiMOS) |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | 1 (unlimited floor life at <30C/85% RH) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS P-Channel Power MOSFET |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (V_DS) | — | -30 V |
| Continuous Drain Current (I_D) at T_C | — | -70 A |
| Pulsed Drain Current (I_D,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at T_C | — | 100 W |
| R_DS(on) max at V_GS=-10V | — | 0.005 ohm (typical) |
| Gate-Source Threshold Voltage (V_GS(th)) | — | -1.0 V to -2.2 V |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Channel Mode | — | Enhancement |