IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon
Артикул: IHW40N120R5XKSA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $5.8 | $5,80 |
| 10 | $5.2 | $52,00 |
| 100 | $4.5 | $450,00 |
| 500 | $3.95 | $1.975,00 |
| 1.000 | $3.5 | $3.500,00 |
IHW40N120R5XKSA1 Обзор
An IGBT (Insulated-Gate Bipolar Transistor) is a voltage-controlled semiconductor switch that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar junction transistor. The RC-H5 variant adds a monolithically integrated anti-parallel diode on the same silicon die, eliminating the need for an external flyback diode and reducing parasitic inductance in the commutation loop. In the broader hierarchy, an IGBT sits between power MOSFETs (used below ~600 V) and higher-voltage thyristors, occupying the mid-voltage (>600 V, <1700 V) switching converter niche.
Key features include low VCE(sat) for reduced conduction loss, soft-switching-optimized trench-field-stop technology, integrated reverse-conducting diode, low EMI signature, and very tight parameter distribution for parallel operation. The TO-247-3 package provides industry-standard mounting, isolated tab, and a wide safety operating area (SOA) suitable for resonant half-bridge topologies. Infineon's recommended derating ceiling is 80% of maximum ratings for optimum lifetime.
Typical applications include induction cooking appliances, resonant half-bridge converters, soft-switching topologies, induction heating inverters, and home appliances such as rice cookers and microwave ovens. The high current and voltage ratings also suit industrial induction heaters and welding power supplies where the integrated diode simplifies the heatsink layout.
When designing with this part, ensure the gate driver can supply the IGBT's gate charge and the snubber layout minimizes stray inductance at the switching node. Use the integrated diode for resonant current paths; an external ultra-fast diode is generally not required but may improve reverse-recovery behavior in non-resonant stages.
Аналоги без доработки для IHW40N120R5XKSA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IHW40N120R5XKSA1 (тот же форм-фактор и посадочное место) — отличается по Package, Gate-Emitter Voltage (VGE), MSL Level, Maximum Power Dissipation (Ptot), Operating Junction Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IHW40N120R5
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IGW30N60H3FKSA1
✅ Прямая замена✓ В наличии
$2.49 / шт.
Открыть даташит →STGW40H120DF2
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
STGW40NC60WD
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IHW40N120R5XKSA1 Максимальные параметры и электрические характеристики
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC, TC=25C) | 80 A |
| Pulsed Collector Current (ICM) | 160 A |
| Maximum Power Dissipation (Ptot) | 394 W |
| Gate-Emitter Voltage (VGE) | +/-20 V |
| Integrated Anti-Parallel Diode | Yes (monolithic reverse-conducting) |
| Technology | Trench Field Stop, Reverse-Conducting RC-H5 |
| Корпус | TO-247-3 (PG-TO247-3) through-hole |
| Тип монтажа | Through Hole |
| Рабочая температура перехода | -40C to +175C |
| Storage Temperature | -55C to +150C |
| Soldering Temperature (max 10s) | 260 C |
| Switching Application | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | Compliant |
| Без галогенов | Yes |
| Уровень MSL | N/A (through-hole) |
Конфигурация выводов IHW40N120R5XKSA1
| Контакт 1 | Gate (G) — Gate control input; standard 15 V drive, threshold ~5-6 V |
| Контакт 2 | Collector (C) — Main current terminal; also connected to the metal tab |
| Контакт 3 | Emitter (E) — Return terminal for collector current and gate drive reference |
Область безопасной работы (DC, VGE=15V, TC=25C)
Типичное применение
IHW40N120R5XKSA1 подходит для 6 применениеs: Induction Cooking Half-Bridge Inverter, Induction Heating Inverter (Industrial), Home Appliance Resonant Power Supply, Wireless EV Charging Resonant Converter, Solar Inverter DC-DC Boost Stage, Induction Rice Cooker / Warming Plate.
Induction Cooking Half-Bridge Inverter
The IHW40N120R5XKSA1 is the reference IGBT for induction cooking half-bridge resonant inverters operating from a 230 VAC rectified bus (325 V DC link). Its monolithically integrated reverse-conducting diode and trench-field-stop RC-H5 process deliver low VCE(sat) and soft commutation behavior at the 20-50 kHz switching frequencies typical of resonant induction heating. The 1200 V blocking voltage provides a 2x safety margin above the rectified bus, and the integrated diode reduces commutation-loop inductance that would otherwise cause voltage overshoot and EMI. Two devices per cooktop zone form the half-bridge, with the resonant tank (L-C) connected to the midpoint driving the induction coil.
Рекомендуется
Induction Heating Inverter (Industrial)
For industrial induction heating installations such as forging, brazing, and surface hardening, the IHW40N120R5XKSA1's 1200 V / 80 A ratings support continuous output powers of 5-15 kW per module, with multiple modules paralleled for higher-power furnaces. The 175 C maximum junction temperature and tight parameter distribution enable reliable parallel operation. The integrated diode is critical in the resonant tank circuit where it conducts the freewheeling current during zero-voltage switching, eliminating the need for an external ultra-fast diode and reducing the BOM count. Use this part with a properly tuned gate driver and resonant tank inductor for efficient ZVS operation above 50 kHz.
Рекомендуется
Home Appliance Resonant Power Supply
The IHW40N120R5XKSA1 is widely used in home appliances requiring medium-power resonant converters - microwave ovens with inverter-driven magnetrons, rice cookers, and premium coffee machines with induction warming plates. Its 1200 V rating handles the rectified 230 VAC mains comfortably, and the integrated diode simplifies the resonant LLC or half-bridge topology favored for its high efficiency and low EMI. The 394 W power dissipation rating provides ample thermal headroom when mounted on a small aluminum heatsink. Drop-in compatibility with the STGW40H120DF2 enables second-sourcing flexibility for high-volume appliance manufacturing.
Рекомендуется
Wireless EV Charging Resonant Converter
In wireless EV charging systems operating at 85 kHz, the IHW40N120R5XKSA1's soft-switching-optimized RC-H5 process delivers low switching losses in the primary-side resonant inverter that drives the charging pad coil. The integrated anti-parallel diode handles the freewheeling current during ZVS transitions, and the 1200 V rating accommodates the rectified 400 V DC bus typical of EV charging applications. For systems above 11 kW output, two IHW40N120R5XKSA1 devices can be paralleled with their matched VCE(sat) ensuring current sharing. The TO-247 package also simplifies thermal management with a clip-mount heatsink.
Рекомендуется
Solar Inverter DC-DC Boost Stage
The IHW40N120R5XKSA1 can serve in a solar inverter's DC-DC boost stage when the input string voltage is high (>600 V) and a high-voltage switch is required. Although the integrated diode is optimized for soft-switching, the device still functions in a hard-switched boost topology, with the monolithic diode providing commutation. The 1200 V rating handles 1000 V open-circuit solar arrays with adequate margin. Compared to dedicated hard-switching IGBTs, the IHW40N120R5XKSA1 trades some switching loss for the BOM-savings benefit of the integrated diode, making it a strong choice for residential string inverters in the 3-10 kW range.
Рекомендуется
Induction Rice Cooker / Warming Plate
Premium induction rice cookers and warming plates use the IHW40N120R5XKSA1 as the half-bridge switch in their 1-2 kW resonant inverter. The monolithically integrated diode and TO-247 package make it ideal for the compact PCB layout of a consumer rice cooker, while the 175 C junction temperature rating and Infineon's recommendation to operate below 80% of maximum ratings provide long-term reliability for a kitchen appliance with a 10+ year service life. The soft-switching-optimized RC-H5 process keeps EMI within consumer-electronics regulatory limits without complex shielding.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IHW40N120R5XKSA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IHW40N120R5 | STGW40H120DF2 | STGW40NC60WD |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | STMicroelectronics | STMicroelectronics |
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Collector-Emitter Voltage (VCE) | 1200 V | 1200 V | 1200 V | 600 V |
| Continuous Collector Current (TC=25C) | 80 A | 80 A | 80 A | 70 A |
| Integrated Anti-Parallel Diode | Yes (monolithic, RC-IGBT) | Yes (monolithic) | Yes (co-packaged die) | Yes (co-packaged anti-parallel) |
| Maximum Power Dissipation | 394 W | 394 W | 452 W | 250 W |
| Technology | Trench Field Stop, RC-H5 (soft-switching optimized) | Trench Field Stop, RC-H5 | Trench Gate Field Stop | Standard Field Stop |
| Soft-Switching Optimization | Yes (induction cooking tuned) | Yes | Yes (H series) | Standard |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Monolithically integrated anti-parallel diode (против STGW40H120DF2)
- Soft-switching-optimized RC-H5 process (против STGW40NC60WD)
- 1200 V voltage class with tight VCE(sat) distribution (против IKD10N60RC2ATMA1)
Заметки по проектированию
Estimated: at 3 kW induction-cooking output power, each IHW40N120R5XKSA1 dissipates roughly 30-45 W in the resonant half-bridge. The TO-247-3 junction-to-case thermal resistance (RthJC) is approximately 0.31 C/W, giving a junction temperature rise of about 12-14 C above the case. Mount the device on an aluminum heatsink of 1-2 C/W with thermal compound (e.g., Shin-Etsu X-23-7762-S); a heatsink temperature of 90-100 C under full load will keep Tj comfortably below the 175 C maximum. Always verify with a thermocouple during worst-case testing rather than relying on calculated values.
For resonant half-bridge topologies, minimize the commutation-loop inductance between the IHW40N120R5XKSA1s and the DC-link capacitor. Use a low-ESR film capacitor bank (e.g., 1-2 uF X2 MKP) placed within 5-10 mm of the collector terminals, and use wide copper pours (50 mm wide if possible) for the high-current paths. Gate-drive traces should be kept short (under 30 mm) and routed away from the switching node to avoid dv/dt-induced gate-ringing. Use a ferrite bead or 10 ohm gate resistor if overshoot exceeds 20 V on the gate during turn-off transitions.
Do not parallel the IHW40N120R5XKSA1 with parts from a different IGBT family (e.g., hard-switching IKW40N120H3) - VCE(sat) and switching-loss mismatch will cause severe current imbalance and thermal runaway. Always pair identical MPNs when paralleling. The integrated monolithic diode is optimized for soft-switching commutation and should not be used as the main freewheeling diode in hard-switched PWM converters - the reverse-recovery softness that benefits resonant ZCS may cause excessive switching loss in hard-switched applications. Always include gate-source pull-down resistors (10 kohm) to prevent spurious turn-on from dv/dt coupling during turn-off of the complementary switch.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Lead-free with matte-tin finish. Halogen-free confirmed by Infineon product family documentation. Not AEC-Q101 qualified - consult Infineon for automotive-grade variants.
