IPT015N10N5ATMA1 vs BSC021N08NS5ATMA1 Сравнение
Подробное сравнение бок о бок IPT015N10N5ATMA1 от Infineon и BSC021N08NS5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IPT015N10N5ATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,78 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT015N10N5ATMA1 | BSC021N08NS5ATMA1 |
| Technology | OptiMOS™ 5 | OptiMOS 5 (N-channel trench) |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| Корпус | PG-HSOF-8-1 (TOLL) | SuperSO8 5x6 (PG-TSON-8-3) |
| Тип монтажа | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Рабочая температура | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| Статус RoHS | Compliant | Compliant (Pb-free) |
| Packaging | Tape & Reel | — |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | — | 2.1 mΩ |
| Gate-Source Voltage V_GS max | — | ±20 V |
| Power Dissipation P_D (Tc=25°C) | — | 214 W |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| Total Gate Charge Q_G typ | — | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | — | [DATA_NEEDED: R_thJC] |
| Уровень MSL | — | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Delivery Form | — | Tape & Reel (T&R) |