IPT015N10N5ATMA1 vs BSC021N08NS5ATMA1 对比

详细并排对比 IPT015N10N5ATMA1 出自 Infineon 和 BSC021N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 量产中

规格对比

参数 IPT015N10N5ATMA1 BSC021N08NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.78 $0.81
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT015N10N5ATMA1 BSC021N08NS5ATMA1
Technology OptiMOS™ 5 OptiMOS 5 (N-channel trench)
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
封装 PG-HSOF-8-1 (TOLL) SuperSO8 5x6 (PG-TSON-8-3)
安装类型 Surface Mount Surface Mount
Configuration Single —
工作温度 -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
RoHS 状态 Compliant Compliant (Pb-free)
Packaging Tape & Reel —
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tc=25°C) — 226 A
Continuous Drain Current (I_D, Tc=100°C) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max (V_GS=10 V) — 2.1 mΩ
Gate-Source Voltage V_GS max — ±20 V
Power Dissipation P_D (Tc=25°C) — 214 W
工作结温 — -55 °C to +175 °C
Total Gate Charge Q_G typ — [DATA_NEEDED: total gate charge]
R_thJC thermal resistance max — [DATA_NEEDED: R_thJC]
MSL 等级 — MSL 1 (per JEDEC J-STD-020)
Avalanche Energy Rated — Yes (single-pulse)
Delivery Form — Tape & Reel (T&R)

数据手册与资源

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