IPT65R040CFD7XTMA1 vs IPB60R040CFD7ATMA1 Сравнение
Подробное сравнение бок о бок IPT65R040CFD7XTMA1 от Infineon и IPB60R040CFD7ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon
IPT65R040CFD7XTMA1 ✓ АктивенInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPT65R040CFD7XTMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,95 | $5,19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | — |
| Technology | Superjunction N-channel MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | — |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | — |
| Continuous Drain Current ID (TC=25C) | 63 A | — |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | — |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | — |
| Корпус | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO263-3-2 (D2PAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | — |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | — |
| Диапазон рабочих температур | -55C to +150C [DATA_NEEDED: confirm junction range] | -55°C to +150°C |
| RoHS Compliance | Compliant | — |
| Уровень MSL | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | 1 |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Рассеиваемая мощность (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Статус RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |