IPT65R040CFD7XTMA1 vs IPB60R040CFD7ATMA1 비교

다음의 상세 나란히 비교: IPT65R040CFD7XTMA1 제조: Infineon 및 IPB60R040CFD7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPT65R040CFD7XTMA1 IPB60R040CFD7ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.95 $5.19
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS CFD7 —
Technology Superjunction N-channel MOSFET Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) 650 V —
Maximum On-State Resistance RDS(on) max 40 mOhm at VGS=10 V —
Typical On-State Resistance RDS(on) typ 34 mOhm —
Continuous Drain Current ID (TC=25C) 63 A —
Gate Threshold Voltage VGS(th) 3.5 V typical [DATA_NEEDED: full min/max] —
Gate-Source Voltage VGS max [DATA_NEEDED: +/-20 V typical for CFD7] —
패키지 PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) PG-TO263-3-2 (D2PAK)
실장 유형 Surface Mount Surface Mount
Topology Suitability LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC —
Body Diode Integrated fast body diode (low Qrr, hard-commutation rugged) —
동작 온도 범위 -55C to +150C [DATA_NEEDED: confirm junction range] -55°C to +150°C
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] 1
Automotive Qualification Industrial grade (AEC-Q101 variants exist separately) —
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
전력 손실 (TC=25°C) — 227 W
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
RoHS 상태 — Compliant
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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