IPT65R040CFD7XTMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPT65R040CFD7XTMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT65R040CFD7XTMA1
IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon
IPT65R040CFD7XTMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPT65R040CFD7XTMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.95 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | β |
| Technology | Superjunction N-channel MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 650 V | β |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | β |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | β |
| Continuous Drain Current ID (TC=25C) | 63 A | β |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | β |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | β |
| Package | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | β |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | β |
| Operating Temperature Range | -55C to +150C [DATA_NEEDED: confirm junction range] | -55Β°C to +150Β°C |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | 1 |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | β |
| Product Family | β | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |