IPW60R041C6FKSA1 vs IPP60R180P7XKSA1 Сравнение
Подробное сравнение бок о бок IPW60R041C6FKSA1 от Infineon и IPP60R180P7XKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPW60R041C6FKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | NRND | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $5,40 | $1,30 |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS P7 (Superjunction N-Channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| Диапазон рабочих температур | -55°C to +150°C | -55 °C to +150 °C |
| Корпус | PG-TO247-3-1 (TO-247-3) | PG-TO220-3 (through-hole) |
| Тип монтажа | Through Hole | Through Hole |
| Уровень MSL | Not Applicable (Through-hole) | N/A (through-hole) |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Количество выводов | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |