IPW60R041C6FKSA1 vs IPP60R180P7XKSA1 对比
详细并排对比 IPW60R041C6FKSA1 出自 Infineon 和 IPP60R180P7XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPW60R041C6FKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.40 | $1.30 |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS P7 (Superjunction N-Channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| 工作温度范围 | -55°C to +150°C | -55 °C to +150 °C |
| 封装 | PG-TO247-3-1 (TO-247-3) | PG-TO220-3 (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| MSL 等级 | Not Applicable (Through-hole) | N/A (through-hole) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| 引脚数 | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |