IQE031N08LM6CGSCATMA1 vs IQEH50NE2LM7ZCGATMA1 Сравнение
Подробное сравнение бок о бок IQE031N08LM6CGSCATMA1 от Infineon и IQEH50NE2LM7ZCGATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ АктивенInfineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE031N08LM6CGSCATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,74 | $1,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 (40 V to 100 V) | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| Корпус | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55 C to +175 C (junction, typical for OptiMOS 6) | -55 degrees C to +175 degrees C |
| Avalanche Tested | 100% avalanche tested | — |
| Уровень MSL | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Technology | — | OptiMOS 7 (Trench-Gate) |
| Qualification | — | Industrial grade per Infineon datasheet |