IQE031N08LM6CGSCATMA1 vs IQEH50NE2LM7ZCGATMA1 对比

详细并排对比 IQE031N08LM6CGSCATMA1 出自 Infineon 和 IQEH50NE2LM7ZCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon

IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon

IQE031N08LM6CGSCATMA1 ✓ 量产中
Infineon
IQEH50NE2LM7ZCGATMA1 IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon

IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon

IQEH50NE2LM7ZCGATMA1 ✓ 量产中

规格对比

参数 IQE031N08LM6CGSCATMA1 IQEH50NE2LM7ZCGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $1.42
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 (40 V to 100 V) OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel N-Channel
Drain-to-Source Voltage (VDS max) 80 V —
Continuous Drain Current (ID) at Ta=25C 18 A —
Continuous Drain Current (ID) at Tc 127 A —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 125 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance RDS(on) max [DATA_NEEDED: RDS(on) at VGS=10 V] —
Gate Drive Level Logic-level —
封装 PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) PG-TTFN-9-3
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +175 C (junction, typical for OptiMOS 6) -55 degrees C to +175 degrees C
Avalanche Tested 100% avalanche tested —
MSL 等级 1 (per JEDEC J-STD-020, typical for Infineon PQFN) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 150 W
Maximum Junction Temperature — +175 degrees C
Technology — OptiMOS 7 (Trench-Gate)
Qualification — Industrial grade per Infineon datasheet

数据手册与资源

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