IQE031N08LM6CGSCATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison
Detailed side-by-side comparison of IQE031N08LM6CGSCATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveInfineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveSpecification Comparison
| Parameter | IQE031N08LM6CGSCATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 (40 V to 100 V) | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS max) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25C | 18 A | β |
| Continuous Drain Current (ID) at Tc | 127 A | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc | 125 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | β |
| Gate Drive Level | Logic-level | β |
| Package | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction, typical for OptiMOS 6) | -55 degrees C to +175 degrees C |
| Avalanche Tested | 100% avalanche tested | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain-Source Voltage (Vds) Max | β | 25 V |
| Continuous Drain Current (Ta) | β | 54 A |
| Continuous Drain Current (Tc) | β | 422 A |
| Maximum On-Resistance (Rds(on)) | β | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.7 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 150 W |
| Maximum Junction Temperature | β | +175 degrees C |
| Technology | β | OptiMOS 7 (Trench-Gate) |
| Qualification | β | Industrial grade per Infineon datasheet |