IRF5210PBF vs IRF520NPBF Сравнение
Подробное сравнение бок о бок IRF5210PBF от Infineon и IRF520NPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF5210PBF | IRF520NPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,82 | $0,66 |
| Тип транзистора | P-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | -100 V | — |
| Continuous Drain Current (Id) at Tc | -40 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | — |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) at Tc | 200 W | — |
| Диапазон рабочих температур | -55 C to +175 C (junction) | -55C to +175C |
| Корпус | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Тип монтажа | Through Hole | Through Hole |
| Technology | HEXFET (Fifth Generation) | HEXFET (vertical DMOS) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Tab Connection | Electrically tied to Drain | — |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Уровень MSL | — | 1 (unlimited) |
| Статус RoHS | — | Compliant (Pb-free) |
| Lead-Free Finish | — | Yes (PBF suffix) |