IRFR5305TRLPBF vs IRFU5305PBF Сравнение
Подробное сравнение бок о бок IRFR5305TRLPBF от Infineon и IRFU5305PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFR5305TRLPBF | IRFU5305PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,38 | $0,68 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | -110 A (pulsed) |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Рабочая температура перехода | -55C to +175C | -55 °C to +175 °C |
| Корпус | TO-252AA (DPAK), surface mount | IPAK (TO-251AA) Through-Hole, 3 pins |
| Тип монтажа | Surface Mount | Through Hole |
| Technology | HEXFET fifth-generation planar MOSFET | — |
| Avalanche Rated | Yes (fully avalanche rated) | Yes (EAS rated) |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | — |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at Tc | — | -31 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 65 mΩ |
| Total Gate Charge (Qg) | — | 42 nC (typical) |
| Power Dissipation (PD) at Tc=25°C | — | 110 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.36 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 62 °C/W |
| RoHS Compliance | — | Compliant |