IRFR5305TRLPBF vs IRFU5305PBF 对比

详细并排对比 IRFR5305TRLPBF 出自 Infineon 和 IRFU5305PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR5305TRLPBF IRFU5305PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.68
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] -110 A (pulsed)
Gate-Source Voltage (VGS) max ±20 V ±20 V
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
工作结温 -55C to +175C -55 °C to +175 °C
封装 TO-252AA (DPAK), surface mount IPAK (TO-251AA) Through-Hole, 3 pins
安装类型 Surface Mount Through Hole
Technology HEXFET fifth-generation planar MOSFET —
Avalanche Rated Yes (fully avalanche rated) Yes (EAS rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
Continuous Drain Current (ID) at Tc — -31 A
On-Resistance RDS(on) max @ VGS=-10V — 65 mΩ
Total Gate Charge (Qg) — 42 nC (typical)
Power Dissipation (PD) at Tc=25°C — 110 W
Thermal Resistance Junction-to-Case (RθJC) — 1.36 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 62 °C/W
RoHS Compliance — Compliant

数据手册与资源

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