IRL3705NPBF vs IRF3205STRLPBF Сравнение
Подробное сравнение бок о бок IRL3705NPBF от Infineon и IRF3205STRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRL3705NPBF | IRF3205STRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,92 | $1,02 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc | 89 A | — |
| Импульсный ток стока | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc | 170 W | — |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | 65.3 nC | — |
| Maximum Junction Temperature | 175 C | — |
| Technology | HEXFET (planar cell, fifth generation) | HEXFET (advanced process) |
| Корпус | TO-220AB (3-pin through-hole) | TO-263-3 (D2PAK) |
| Тип монтажа | Through Hole | Surface Mount |
| Gate Drive Level | Logic-level | — |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | — |
| Lead-Free (PBF suffix) | Yes | — |
| Статус RoHS | Compliant (per PBF suffix) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Диапазон рабочих температур | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Packaging | — | Tape & Reel (STRL) |