IRL3705NPBF vs IRF3205STRLPBF 对比

详细并排对比 IRL3705NPBF 出自 Infineon 和 IRF3205STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF3205STRLPBF IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF ✓ 量产中

规格对比

参数 IRL3705NPBF IRF3205STRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $1.02
FET Type N-Channel —
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
脉冲漏极电流 [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) HEXFET (advanced process)
封装 TO-220AB (3-pin through-hole) TO-263-3 (D2PAK)
安装类型 Through Hole Surface Mount
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes —
RoHS 状态 Compliant (per PBF suffix) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) @ Tc=25°C — 110 A
Pulsed Drain Current (Idm) — 390 A
Static Drain-Source On-Resistance (Rds(on)) — 8 mΩ max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 97.3 nC typical
Power Dissipation (Pd) @ Tc=25°C — 200 W
工作温度范围 — -55 °C to +175 °C (Tj)
Lead-Free / RoHS Status — Lead-Free / RoHS Compliant (PBF suffix)
Packaging — Tape & Reel (STRL)

数据手册与资源

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