IRLTS2242TRPBF vs IRFR5305TRPBF Сравнение
Подробное сравнение бок о бок IRLTS2242TRPBF от Infineon и IRFR5305TRPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRLTS2242TRPBF | IRFR5305TRPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,14 | $0,32 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) at TA=25C | -6.9 A | — |
| Power Dissipation (PD) at TA=25C | 2.0 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 32 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Drive Voltage (logic level) | 4.5 V (fully enhanced), 2.5 V capable | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Корпус | TSOP-6 (Micro 6) | TO-252AA (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C (junction) | -55 C to +175 C |
| Package Thermal Resistance (RthJA) | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] | — |
| Уровень MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Статус RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free | Yes | — |
| Без галогенов | Yes | — |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Lead-Free Finish | — | Yes (PBF suffix) |