IRLTS2242TRPBF vs IRFR5305TRPBF 对比
详细并排对比 IRLTS2242TRPBF 出自 Infineon 和 IRFR5305TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLTS2242TRPBF | IRFR5305TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.14 | $0.32 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) at TA=25C | -6.9 A | — |
| Power Dissipation (PD) at TA=25C | 2.0 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 32 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Drive Voltage (logic level) | 4.5 V (fully enhanced), 2.5 V capable | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| 封装 | TSOP-6 (Micro 6) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | -55 C to +175 C |
| Package Thermal Resistance (RthJA) | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Lead-Free Finish | — | Yes (PBF suffix) |