MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
Артикул: MPQ2222A ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.82 | $0,82 |
| 10 | $0.72 | $7,20 |
| 100 | $0.58 | $58,00 |
| 500 | $0.49 | $245,00 |
| 1.000 | $0.41 | $410,00 |
MPQ2222A Обзор
A transistor array such as the MPQ2222A integrates multiple discrete BJTs into a single package, reducing board space, component count, and assembly cost. Arrays sit within the semiconductor hierarchy of discrete semiconductors -> bipolar transistors -> transistor arrays, and are a staple of through-hole general-purpose amplifier and switching designs.
Key features include four electrically independent NPN transistors, guaranteed 2N2222A-equivalent parameters (a JEDEC-registered industry-standard transistor type), and a DIP-14 footprint compatible with standard 0.1-inch pitch prototyping boards and sockets. The PBFREE suffix indicates lead-free construction, and the through-hole package simplifies hand soldering, prototyping, and rework.
Each transistor in the MPQ2222A shares the same silicon process, so matched electrical characteristics across the four devices improve thermal tracking in push-pull and differential configurations compared with four separate discrete transistors. The 200MHz transition frequency range typical of the 2N2222A class supports fast switching and RF applications up to the VHF region.
Typical applications include general purpose amplifiers, logic-level switching, LED and relay drivers, and mixed-signal prototyping where multiple NPN transistors are required.
Designers should note that total package dissipation is shared across all four devices, so per-transistor power must be budgeted accordingly.
This page synthesizes distributor data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для MPQ2222A — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MPQ2222A (тот же форм-фактор и посадочное место) — отличается по Package, Collector-Base Voltage (VCBO), Configuration, Emitter-Base Voltage (VEBO), RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MPQ2222A PBFREE
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MPQ2222
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.39 / шт.
Открыть даташит →MPQ2222A
✅ Прямая замена✓ В наличии
$0.41 / шт.
Открыть даташит →MPQ2222AR
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MPQ2222A Максимальные параметры и электрические характеристики
| Тип транзистора | Quad NPN General Purpose BJT Array |
| Number of Transistors | 4 (independent) |
| Напряжение коллектор-эмиттер (Vceo) | 40 V |
| Напряжение коллектор-база (Vcbo) | 75 V |
| Напряжение эмиттер-база (Vebo) | 6.0 V |
| Continuous Collector Current | 500 mA |
| Power Dissipation (total package) | 650 mW |
| Transition Frequency | 200 MHz |
| Корпус | TO-116 (14-pin DIP, through hole) |
| Тип монтажа | Through Hole |
| Configuration | General Purpose Amplifier / Switch |
| Base Technology | Bipolar (BJT) |
| Polarity | NPN |
| Lead-Free | Yes (PBFREE) |
Конфигурация выводов MPQ2222A
| Контакт 1 | Q1 Base — Base of transistor 1 |
| Контакт 2 | Q1 Collector — Collector of transistor 1 |
| Контакт 3 | Q1 Emitter — Emitter of transistor 1 |
| Контакт 4 | Q2 Base — Base of transistor 2 |
| Контакт 5 | Q2 Collector — Collector of transistor 2 |
| Контакт 6 | Q2 Emitter — Emitter of transistor 2 |
| Контакт 7 | NC — Not connected (per datasheet) |
| Контакт 8 | Q3 Base — Base of transistor 3 |
| Контакт 9 | Q3 Collector — Collector of transistor 3 |
| Контакт 10 | Q3 Emitter — Emitter of transistor 3 |
| Контакт 11 | Q4 Base — Base of transistor 4 |
| Контакт 12 | Q4 Collector — Collector of transistor 4 |
| Контакт 13 | Q4 Emitter — Emitter of transistor 4 |
| Контакт 14 | NC — Not connected (per datasheet) |
Типичное применение
MPQ2222A подходит для 6 применениеs: General Purpose Amplification, Relay and Solenoid Driver, LED Driver and Indicator Circuits, Legacy Equipment Repair and Rework, Education and Prototyping, Switching Logic and Level Interfaces.
General Purpose Amplification
The MPQ2222A provides four independent 2N2222A-class NPN transistors in one 14-pin DIP, making it a natural fit for multi-stage small-signal amplifiers, buffers, and comparators built in through-hole. Its approximately 200MHz transition frequency supports audio through low-RF gain stages, while the guaranteed A-grade hFE range simplifies bias design and stage-to-stage gain prediction. Because all four die share one package, they track thermally, reducing drift in differential or push-pull front ends compared with four separate TO-92 devices. Place the array in a standard DIP socket for fast experimentation; each base needs only a series resistor, and emitter degeneration of tens of ohms stabilizes gain at 500mA-class collector currents well within the 650mW package budget.
Рекомендуется
Relay and Solenoid Driver
The MPQ2222A drives small 5V and 12V relays and solenoids directly from microcontroller outputs: each NPN element sinks up to 500mA continuously, far above typical 15-80mA signal-relay coil currents, and 40V VCEO withstands coil transients with an external flyback diode. Estimated: driving a 12V/30mA relay coil with roughly 0.3V saturation dissipates only about 9mW per device, negligible against the 650mW package rating. The four independent transistors let one DIP drive four channels of relay logic on a single prototyping board. Use a 1k-4.7k base resistor from 5V logic for reliable saturation, and keep coil current under 300mA per channel when several channels operate simultaneously to respect total package dissipation.
Рекомендуется
LED Driver and Indicator Circuits
With 500mA per channel and simple base-resistor drive, the MPQ2222A sinks LED strings, indicator lamps, and seven-segment digits from 3.3V or 5V logic. Estimated: switching a 100mA LED string with 0.3V collector-emitter saturation dissipates about 30mW, so even four simultaneous 100mA channels total roughly 120mW, comfortably within the 650mW package limit. The A-grade hFE guarantee of 100 or more means a 2-5mA base drive fully saturates the transistor from any MCU GPIO. The through-hole DIP package suits breadboard prototyping of multiplexed displays and status panels, and the pin-per-transistor layout keeps routing intuitive: base pin adjacent to the MCU row, collector pin to the LED cathode row.
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Legacy Equipment Repair and Rework
The MPQ2222A is a preferred repair part for vintage industrial controls, test equipment, and audio gear that used Motorola-original MPQ2222A or MPQ2222 quad arrays in 14-pin DIP sockets. Central Semiconductor continues the exact TO-116 footprint and 2N2222A-grade electricals, so a PBFREE replacement drops into the original socket without PCB modification. The four-independent-transistor architecture means a failed channel can be verified by diode-testing base-emitter and base-collector junctions on each triplet of pins (1/2/3, 4/5/6, 8/9/10, 11/12/13). Keeping MPQ2222A in stock covers repair of driver boards across decades of equipment that standardized on this array.
Рекомендуется
Education and Prototyping
Four matched transistors in one breadboard-friendly DIP make the MPQ2222A ideal for electronics education and rapid prototyping: students can build astable multivibrators, differential pairs, current mirrors, and H-bridge halves without juggling loose TO-92 cans. The 0.1-inch pitch drops directly into solderless breadboards and wire-wrap boards, and the datasheet's per-pin ordering (B-C-E triplets) teaches package reading. With 40V and 500mA ratings, experiments can run at realistic 12V industrial levels safely, and the approximately 200MHz fT demonstrates both audio amplification and RF oscillation on one device. Because the four die share a silicon process, matched-pair lab measurements (VBE matching, beta tracking) give repeatable classroom results.
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Switching Logic and Level Interfaces
The MPQ2222A implements discrete NOR/NAND gates, level shifters, and open-collector bus interfaces where 40V collector standoff is needed on 5V-logic systems. Each transistor's 40V VCEO allows interfacing 24V industrial sensor lines to low-voltage microcontrollers: the collector ties to the 24V domain through a pull-up, the base is driven from the 5V side through a resistor divider, giving a robust non-inverting or inverting translator. Estimated: with a 2.2k pull-up to 24V, saturated collector current is about 10mA, dissipating only a few milliwatts per channel. Four channels per package suit parallel status buses, stepper phase drivers, and PLC-style input cards built in repairable through-hole form.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MPQ2222A — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MPQ2222A PBFREE | MPQ2222 | MPQ2222A (Motorola) |
|---|---|---|---|---|
| Package | TO-116 (14-pin DIP) | TO-116 (14-pin DIP) - same | TO-116 (14-pin DIP) - same | TO-116 (14-pin DIP) - same |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor | onsemi (legacy Motorola) |
| Configuration | 4 x independent NPN | 4 x independent NPN | 4 x independent NPN | 4 x independent NPN |
| VCEO | 40 V | 40 V | 40 V | 40 V |
| Collector Current | 500 mA | 500 mA | 500 mA | 500 mA |
| Package Power Dissipation | 650 mW | 650 mW | 650 mW | 650 mW |
| hFE Grade | A-grade (2N2222A limits) | A-grade (2N2222A limits) | Standard grade (wider limits) | A-grade (2N2222A limits) |
| Lifecycle Status | Active | Active | Active | Obsolete (legacy source) |
Ключевые отличия
- A-grade gain guarantee (против MPQ2222)
- Active production source for a legacy type (против MPQ2222A (Motorola))
- Four independent transistors vs one (против 2N2222A)
Заметки по проектированию
Budget power against the 650mW total package rating, not a per-transistor figure. Estimated: one transistor dissipating 500mA at 1V VCE would be 500mW alone - fine short-term, but add ambient derating above 25C per the manufacturer datasheet curve. If multiple channels drive heavy loads simultaneously, spread dissipation by inserting small emitter resistors (2.2-10 ohm) to force current sharing and reduce per-die stress.
Always fit a flyback diode across relay and solenoid coils; the 40V VCEO rating does not make the transistors avalanche-proof against unclamped inductive kickback from a 12V coil, which can exceed 100V. Also confirm the A-grade hFE requirement: substituting the standard MPQ2222 in a design biased for guaranteed 2N2222A beta may shift saturation and gain margins in low-base-drive circuits.
For through-hole prototyping, use a DIP-14 socket to allow easy substitution between MPQ2222A, MPQ2222, and future replacement grades without desoldering. Keep collector traces carrying near-500mA currents at least 0.5mm wide (1oz copper) and place flyback diodes physically close to the load, not the array, to contain inductive switching loops and reduce EMI.
Информация о соответствии
PBFREE suffix denotes Central Semiconductor lead-free construction; Mouser lists the part as NPN 75Vcbo 40Vceo 6.0Vebo 500mA 650mW. REACH, halogen-free, and conflict-minerals declarations not stated in retrieved data.
