MRF8P26080HSR3 vs AFT26P100-4WSR3 Сравнение
Подробное сравнение бок о бок MRF8P26080HSR3 от NXP Semiconductors и AFT26P100-4WSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ Активен
Сравнение характеристик
| Параметр | MRF8P26080HSR3 | AFT26P100-4WSR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $99,85 | $88,81 |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) |
| Technology | Gen8 LDMOS (Silicon, Lateral) | LDMOS, lateral diffused |
| Frequency Range | 2500 MHz to 2700 MHz | 2496 MHz to 2690 MHz |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| Корпус | NI-780S-4 (ceramic, flange-mount, air-cavity) | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity |
| Тип монтажа | Through-hole flange-mount with screw attachment | Surface Mount / Chassis Mount (bolt-down) |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| Диапазон рабочих температур | -40C to +150C (junction) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Product Family | — | Airfast RF Power LDMOS |
| Configuration | — | Symmetrical Doherty, Dual-section |
| Test Frequency | — | 2.69 GHz |
| Drain Voltage (Vds) | — | 28 V (typical), 65 V (maximum rating) |
| Average Output Power | — | 22 W (Doherty) |
| Power Gain | — | 15.1 dB (typical at 200 mA) |
| Test Quiescent Current (Idq) | — | 200 mA |
| Operating Mode | — | Class AB / Doherty |
| Polarity | — | N-Channel |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Статус RoHS | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |