MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
Артикул: MRF8P26080HSR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $119.75 | $11.975,00 |
| 500 | $108.2 | $54.100,00 |
| 1.000 | $99.85 | $99.850,00 |
MRF8P26080HSR3 Обзор
Gen8 N-channel enhancement-mode lateral MOSFETs represent the leading edge of silicon RF power technology, sitting above Gen6/Gen7 parts in efficiency and bandwidth for cellular infrastructure. Within the cellular base-station RF signal chain, this device sits between the transceiver exciter (where small-signal LDMOS or GaAs devices operate) and the antenna feed network, delivering the high-power RF energy that ultimately reaches the antenna element. Its lateral geometry provides stable gain, excellent thermal performance, and consistent large-signal behavior when used in Doherty amplifier configurations that dominate modern 4G LTE and 5G NR radios.
Key features include 14 W average output power at 2.6 GHz, 80 W peak envelope power for high-PAR signals, and a wide operating bandwidth that covers the entire 2.5–2.7 GHz LTE band. The device is characterized in a typical Doherty single-carrier W-CDMA test fixture, simplifying reference designs. The NI-780S-4 ceramic air-cavity package offers a low-inductance flange-mount footprint with gold-plated leads and excellent heat dissipation through the package base.
Technically, the MRF8P26080HSR3 uses lateral N-channel LDMOS architecture on the Gen8 process, which trades absolute RF power density for superior efficiency, gain, and ruggedness versus older silicon technologies. It offers high drain efficiency when used in Doherty peaking/peak amplifier configuration, and the device is also robust enough for many commercial pulsed avionics and tactical-radio front-end designs.
Typical applications include W-CDMA and LTE cellular base stations using Doherty or single-ended PA topologies, 2.5–2.7 GHz 4G LTE small-cell and micro-cell power amplifiers, 5G NR (band n41, n38, n40) high-power driver amplifiers, TDD transmitter final stages, RF-link and tactical-radio power amplifiers in commercial and industrial systems, and industrial-scientific RF heating applications operating in the 2.45–2.7 GHz ISM band.
When designing with this part, pay close attention to PCB material selection (low-loss Rogers RO4350 or similar recommended), thermal mounting torque sequence per NXP application notes, and DC bias sequencing. Use a regulated 28 V supply with proper in-rush current limiting and gate-bias network per the reference design to prevent parametric drift.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical thermal/RF design notes not consolidated in the manufacturer datasheet.
Аналоги без доработки для MRF8P26080HSR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF8P26080HSR3 (тот же форм-фактор и посадочное место) — отличается по Frequency Range, Mounting Type, Technology, Transistor Type, Application.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
Для этого товара нет аналогов без доработки.
Запросить аналогиMRF8P26080HSR3 Максимальные параметры и электрические характеристики
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Gen8 LDMOS (Silicon, Lateral) |
| Frequency Range | 2500 MHz to 2700 MHz |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | 80 W |
| Drain-Source Voltage (VDSS max) | 65 V |
| Operating Drain Voltage (VDD) | 28 V nominal |
| Test Mode | Typical Doherty Single-Carrier W-CDMA |
| Application Class | Class AB or Class C capable |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier |
| Корпус | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Тип монтажа | Through-hole flange-mount with screw attachment |
| Lead Finish | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | Compliant |
| Диапазон рабочих температур | -40C to +150C (junction) |
Конфигурация выводов MRF8P26080HSR3
| Контакт 1 | RF Input / Gate — Gate bias / RF input (matched 50 ohm) |
| Контакт 2 | Drain (RF Output) — Drain supply / RF output (matched 50 ohm) |
| Контакт 3 | Source / Flange — Source and thermal pad (chassis ground, screw-mount flange) |
DC Область безопасной работы (Lateral LDMOS, VGS = +2.5 V)
Типичное применение
MRF8P26080HSR3 подходит для 6 применениеs: 4G LTE Cellular Base Station Doherty Power Amplifier, 5G NR Band n41 (2.6 GHz TDD) Final Stage, 2.6 GHz TDD Transmitter Final Stage, RF Link and Tactical Radio Power Amplifier, Industrial-Scientific 2.45-2.7 GHz ISM Power Amplifier, Small-Cell and Micro-Cell Power Amplifier Module.
4G LTE Cellular Base Station Doherty Power Amplifier
The MRF8P26080HSR3's 14 W average output power and 80 W peak in the 2500-2700 MHz band make it a primary final-stage device for 4G LTE band 7 (2620-2690 MHz) base-station Doherty power amplifiers. Its lateral N-channel LDMOS architecture provides high drain efficiency at the 6-9 dB back-off required for LTE signals with high peak-to-average ratio. Placed at the output of a two-way Doherty network with carrier and peaking amplifier paths, the MRF8P26080HSR3 supplies the peak envelope power while a parallel peaking device handles the high-PAR excursions. The 28 V supply enables direct compatibility with standard -48 V cellular power-supply topologies via a single buck conversion stage, simplifying PA module design and reducing total BOM cost in macro-cell and small-cell deployments.
Рекомендуется
5G NR Band n41 (2.6 GHz TDD) Final Stage
The MRF8P26080HSR3's 2500-2700 MHz coverage directly aligns with the 5G NR band n41 TDD allocation (2496-2690 MHz), making it a useful silicon LDMOS option for early 5G NR active antenna systems and small-cell deployments. Its 80 W peak envelope power easily accommodates 5G NR FR1 100 MHz bandwidth signals with 7-9 dB peak-to-average ratios when deployed in a Doherty PA configuration. Placed at the output of a wideband gate-bias-sequenced Doherty with 5G NR-compatible DPD linearization, the MRF8P26080HSR3 demonstrates excellent ACPR performance at 28 V drain. For massive-MIMO systems, multiple MRF8P26080HSR3 devices per antenna element provide the RF power density required for sub-6 GHz 64T64R and 32T32R arrays.
Рекомендуется
2.6 GHz TDD Transmitter Final Stage
The MRF8P26080HSR3 handles the full output power amplification for 2.6 GHz time-division duplex (TDD) transmitter chains in commercial cellular base stations. Its 14 W average power rating, characterized in a typical Doherty W-CDMA fixture per the NXP datasheet, ensures stable RF performance across TDD transmit-burst duty cycles from 30% to 70%. Placed between a 28 V buck converter and the duplexer output filter, the MRF8P26080HSR3 demonstrates excellent thermal stability thanks to its NI-780S-4 ceramic air-cavity package which mounts directly to the chassis heatsink. The fast gate-bias switching (microseconds) supports rapid TDD burst ramp profiles without invoking memory effects or gain drift that would degrade EVM on the modulated signal.
Рекомендуется
RF Link and Tactical Radio Power Amplifier
The MRF8P26080HSR3's rugged lateral LDMOS construction and high 28 V operation make it well-suited for commercial RF-link, point-to-point microwave, and tactical radio power amplifier applications in the 2.5-2.7 GHz band. Its 80 W peak envelope capability supports broadband QAM and OFDM waveforms used in defense and commercial data-link radios. Placed at the output of a wideband AB-class driver chain with digital predistortion, the MRF8P26080HSR3 provides the linear RF power output needed for 50+ Mbps tactical data links while maintaining spectral mask compliance under NLoS propagation. The device's tolerance for 2:1 VSWR mismatch further enhances its value in fixed-install and vehicular-mounted radio systems.
Рекомендуется
Industrial-Scientific 2.45-2.7 GHz ISM Power Amplifier
The MRF8P26080HSR3's 2500-2700 MHz operating range overlaps the upper portion of the global 2.4 GHz industrial-scientific-medical (ISM) band (2400-2483.5 MHz is adjacent) and directly covers the 2.5-2.7 GHz scientific and medical extensions used in plasma generators, dielectric heaters, and RF energy applications. Its 14 W average continuous output supports medium-power industrial heating and scientific instrumentation. Placed at the output of a Class AB linear amplifier with closed-loop power-level control, the MRF8P26080HSR3 delivers stable output to 50 ohm coaxial or waveguide transitions while its ceramic NI-780S-4 flange-mount design provides robust mounting to industrial chassis and heatsink assemblies rated for continuous duty cycles.
Рекомендуется
Small-Cell and Micro-Cell Power Amplifier Module
The MRF8P26080HSR3 enables compact and cost-effective PA modules for outdoor and indoor small-cell base stations operating in the 2.5-2.7 GHz LTE band 7 and 5G NR band n41 spectra. Its integrated ceramic NI-780S-4 flange-mount package eliminates the need for external output matching components, enabling a single-stage PA module design with the MRF8P26080HSR3 directly driving a bandpass filter and antenna. The 14 W average power supports small-cell coverage radii of 1-3 km, suitable for urban street-level and indoor-deployment use cases. Placed with a low-cost 28 V buck regulator fed from -48 V PoE input, the MRF8P26080HSR3 simplifies PA module BOM while still delivering Gen8 efficiency and ruggedness.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF8P26080HSR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8P26080HR3 | MRF8S26060HSR3 | MRF8S26060HR3 | MRF8P23080HSR5 | AFT26P100-4WSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4 | NI-780S-4 | NI-780S-4 | NI-780S-4 | NI-780S-4 | NI-780 (similar footprint) |
| Frequency Range | 2500-2700 MHz | 2500-2700 MHz | 2500-2700 MHz | 2500-2700 MHz | 2300-2400 MHz | 2496-2690 MHz |
| Peak Output Power (CW) | 80 W | 80 W | 60 W | 60 W | 80 W | 100 W |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Technology | Gen8 LDMOS | Gen8 LDMOS | Gen8 LDMOS | Gen8 LDMOS | Gen8 LDMOS | LDMOS |
| Architecture | Single-ended / Doherty ready | Single-ended / Doherty ready | Single-ended / Doherty ready | Single-ended / Doherty ready | Single-ended / Doherty ready | Symmetrical Doherty pair |
Ключевые отличия
- Highest peak envelope power in NXP's Gen8 2.6 GHz portfolio (против MRF8S26060HSR3)
- Optimized for the entire 2.5-2.7 GHz band in a single part (против MRF8P23080HSR5)
- Older but mature Gen8 LDMOS technology with extensive reference designs (против AFT26P100-4WSR3)
- Lower price point for moderate-power LTE base-station designs (против MRF8P26080HR3)
- Ceramic air-cavity package enables direct chassis-mount heatsinking (против Generic plastic-packaged RF MOSFETs)
Заметки по проектированию
The MRF8P26080HSR3's NI-780S-4 ceramic air-cavity package is designed for flange-mount attachment to a chassis or heatsink using two M2 or M3 mounting screws with a recommended torque of 0.6-0.8 N·m per NXP application notes. Apply a thin (~50 micron) layer of thermal interface material (e.g. thermal grease, Bergquist Bond Ply 100 series or similar) between the package base and heatsink to minimize thermal resistance. Estimated: at 80 W peak with 50% duty cycle, the device dissipates approximately 28 W of heat in Doherty operation; adequate heatsinking must keep junction temperature below 150C derated from the 175C absolute maximum.
Use low-loss PCB material (Rogers RO4350B or RO4003C, 0.020 inch thickness) for RF input and output traces between the MRF8P26080HSR3 and the external matching components. The package leads are gold-plated and should be soldered with a controlled-temperature profile not exceeding the NXP-recommended 280C peak temperature. Estimated: at 2.6 GHz with 20 mil microstrip line on 0.020 inch RO4350B, expect approximately 0.4 dB/inch insertion loss on 50 ohm transmission lines, which must be de-embedded from amplifier gain measurements.
Do not exceed VDSS max of 65 V at any transient including supply-rail overshoot, gate-bias switching spikes, or hot-switching events. Use a 100 uF / 50 V electrolytic bulk capacitor local to the drain supply pin combined with a 10 nF / 100 V ceramic decoupling capacitor to suppress switching transients. Apply gate bias first, then ramp drain voltage, and reverse the sequence at shut-down - failing to do so can trap charge in the gate oxide and shift quiescent bias over time.
Maintain at least 1.5 mm keep-out between the RF input and RF output leads around the package, and place DC-bias feed networks at least 3 mm offset from RF traces to prevent coupling and oscillations. The flange-mount screw holes should be grounded to the chassis ground plane with low-impedance vias (4+ vias per hole) to avoid parasitic inductance affecting gain and stability at 2.6 GHz. Estimated: inadequate grounding increases common-lead inductance by ~0.5 nH, which can pull 2-3 dB of gain margin and create risk of low-frequency parametric oscillation.
For Doherty amplifier configurations, the gate-bias sequencing between the main and peaking amplifiers must be designed with attention to offset timing between quadrature-hybrid combiner paths. The carrier (main) amplifier is biased Class AB while the peaking amplifier is biased Class C to improve efficiency at back-off; mismatched quiescent currents will degrade linearity and ACPR. Use NXP reference designs in application note AN1937 and AN2151 for validated Doherty architecture for 2.6 GHz band 7 / 5G NR band n41 applications.
Информация о соответствии
RoHS compliant per NXP product documentation; lead finish gold over NiPdAu. AEC-Q100 not applicable - this is an infrastructure RF power device, not an automotive-grade part. Halogen-free status not explicitly stated in verified data and should be confirmed via NXP's compliance portal.
