2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
Артикул: 2ED21844S06JXUMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.61 | $26,10 |
| 100 | $2.18 | $218,00 |
| 500 | $1.92 | $960,00 |
| 1.000 | $1.68 | $1.680,00 |
2ED21844S06JXUMA1 Обзор
A gate driver is a power-management IC that sits between a low-power control MCU or PWM controller and the gate of a high-power switching transistor (MOSFET, IGBT, GaN, or SiC). Its job is to translate 3.3 V or 5 V logic levels into the 10 V to 15 V gate-drive swing required by the power device, while providing sufficient source/sink current to charge and discharge the gate capacitance quickly. Within the power-conversion hierarchy, gate drivers sit between the controller (functional block) and the power stage (physical block), and they belong to the broader PMIC (Power Management IC) family alongside voltage regulators, supervisors, and motor drivers.
Key features of the 2ED21844S06JXUMA1 include integrated bootstrap diode that eliminates an external discrete component, undervoltage lockout (UVLO) for both the low-side and high-side rails, a dedicated shutdown pin, and matched propagation delays between the two channels to minimize dead-time distortion. The driver's 200 ns typical propagation delay supports switching frequencies up to several hundred kHz, making it suitable for resonant and hard-switched converters alike.
The architecture uses Infineon's HVIC (High-Voltage IC) process with level-shifters that allow the high-side channel to float up to 650 V relative to ground. This monolithic approach reduces BOM count versus discrete bootstrap implementations and provides improved noise immunity through controlled dV/dt behavior.
Typical applications include motor drives for industrial and home appliances, solar inverters, uninterruptible power supplies (UPS), switched-mode power supplies (SMPS), induction heating, and welding equipment. The integrated bootstrap and 2.5 A drive strength handle medium-power IGBT modules and high-current MOSFETs in the 600 V class.
When designing with this part, place the bootstrap capacitor (typically 1 uF to 4.7 uF ceramic) as close as possible to the VB and VS pins to minimize the high-side supply loop inductance, which directly affects switching loss and ringing. The shutdown pin can be left open if not used.
This page synthesizes distributor pricing, drop-in alternatives from Infineon's 2ED218x family, and practical design notes that go beyond the manufacturer datasheet to help engineers select and lay out a half-bridge driver stage.
Аналоги без доработки для 2ED21844S06JXUMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 2ED21844S06JXUMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Input Logic Compatibility, Number of Drivers, Configuration, Operating Temperature Range.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
2ED21844S06F
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
2ED2184S06F
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
2ED2106S06FXUMA1
✅ Прямая замена✓ В наличии
$0.78 / шт.
Открыть даташит →1ED3125MU12FXUMA1
✅ Прямая замена✓ В наличии
$1.55 / шт.
Открыть даташит →6EDL04N02PRXUMA1
✅ Прямая замена✓ В наличии
$2.32 / шт.
Открыть даташит →2ED21844S06JXUMA1 Максимальные параметры и электрические характеристики
| Driver Configuration | Half-Bridge |
| Number of Drivers | 2 (high-side + low-side) |
| Input Type | Non-Inverting |
| Blocking Voltage (Voffset) | 650 V |
| Output Current (Source/Sink) | 2.5 A typical |
| Bootstrap Diode | Integrated |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails |
| Shutdown Pin | Yes |
| Negative VS Transient Immunity | -100 V typical |
| Диапазон рабочих температур | -40 C to +125 C |
| Корпус | PG-DSO-14-49 (DSO-14) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
Конфигурация выводов 2ED21844S06JXUMA1
| Контакт 1 | VCC — Low-side and logic supply voltage (10 V to 20 V) |
| Контакт 2 | HIN — Logic input for high-side gate driver (TTL, non-inverting) |
| Контакт 3 | LIN — Logic input for low-side gate driver (TTL, non-inverting) |
| Контакт 4 | SD — Shutdown pin (logic low disables outputs) |
| Контакт 5 | GND — Ground reference for low-side driver and logic |
| Контакт 6 | LO — Low-side gate-drive output to low-side MOSFET/IGBT gate |
| Контакт 7 | VS — High-side floating supply return (connected to half-bridge midpoint) |
| Контакт 8 | HO — High-side gate-drive output to high-side MOSFET/IGBT gate |
| Контакт 9 | VB — High-side floating supply (bootstrapped from VCC via internal diode) |
| Контакт 10 | NC — Not connected (per datasheet) |
| Контакт 11 | NC — Not connected (per datasheet) |
| Контакт 12 | NC — Not connected (per datasheet) |
| Контакт 13 | NC — Not connected (per datasheet) |
| Контакт 14 | NC — Not connected (per datasheet) |
Типичное применение
2ED21844S06JXUMA1 подходит для 6 применениеs: Industrial Motor Drives (VFD), Solar String Inverters, Uninterruptible Power Supplies (UPS), Induction Heating Cooktops, Welding Equipment (Inverter Welding Machines), Switched-Mode Power Supplies (SMPS).
Industrial Motor Drives (VFD)
The 2ED21844S06JXUMA1 is well suited for variable-frequency drives controlling 400 V and 600 V class AC induction motors and PMSMs in industrial automation. Its 650 V blocking voltage and 2.5 A drive current easily handle 600 V IGBT modules in the 10 A to 50 A range, while the integrated bootstrap diode eliminates an external component in the high-side supply. Placed between the MCU/DSP PWM outputs and the IGBT half-bridge, it provides matched propagation delays (about 200 ns) that minimize dead-time distortion and improve motor efficiency. The shutdown pin enables fast hardware-level protection on overcurrent events from the DESAT or shunt-amplifier feedback path.
Рекомендуется
Solar String Inverters
In grid-tied solar inverters, the 2ED21844S06JXUMA1 drives the IGBT or super-junction MOSFET half-bridges in the DC-AC stage that converts 600 V to 1000 V DC bus into 230 V AC mains. Its 650 V rating covers 600 V DC bus systems with adequate margin, and the 2.5 A drive current charges and discharges MOSFET gate capacitances quickly enough to keep switching losses manageable at 20 kHz to 50 kHz PWM frequencies. The integrated bootstrap diode reduces BOM and improves long-term reliability in outdoor solar installations, where thermal cycling stresses discrete components. TTL-compatible inputs interface directly with the inverter's DSP or MCU PWM controller without level shifters.
Рекомендуется
Uninterruptible Power Supplies (UPS)
The 2ED21844S06JXUMA1 drives the half-bridge stages in on-line and line-interactive UPS systems, where it switches the battery-inverter MOSFETs/IGBTs that produce the AC output from a 384 V DC bus. The 650 V blocking voltage gives sufficient margin above 384 V DC plus transient spikes, and the matched propagation delays reduce the risk of cross-conduction that would otherwise cause shoot-through failures in the inverter. The built-in UVLO protects the power switches from inadequate gate-drive voltage during low-battery brownout conditions, while the shutdown pin allows the MCU to disable the inverter within microseconds on fault detection.
Рекомендуется
Induction Heating Cooktops
In residential induction cooking, the 2ED21844S06JXUMA1 drives the resonant half-bridge that excites the cooking-zone coil at 20 kHz to 100 kHz. Its 2.5 A drive current easily switches the high-current IGBTs (often 40 A to 100 A class) used in this application, while the 650 V rating supports the rectified 230 V or 400 V mains bus. The integrated bootstrap diode and shutdown pin simplify the cooktop inverter design and allow fast protective turn-off if pan-presence detection or over-temperature sensing flags a fault. Matched propagation delays keep the resonant tank in balance across both halves of the bridge.
Рекомендуется
Welding Equipment (Inverter Welding Machines)
The 2ED21844S06JXUMA1 is used in professional inverter welding machines where the secondary current must be precisely controlled via a high-frequency switching stage. The 650 V blocking voltage handles the rectified 400 V to 540 V DC bus typical of 3-phase welding input, and the 2.5 A drive current drives large IGBT modules that switch welding currents up to 300 A. The driver's matched propagation delays and short dead-time requirement improve arc stability and reduce secondary rectification losses. The integrated bootstrap and shutdown pin provide the protection and simplicity required in this harsh industrial environment with frequent load transients.
Рекомендуется
Switched-Mode Power Supplies (SMPS)
The 2ED21844S06JXUMA1 fits half-bridge and full-bridge SMPS topologies in telecom and server power supplies operating from a 400 V DC bus. Its 650 V blocking voltage gives adequate margin above the rectified 230 V or 380 V AC mains, and 2.5 A drive current supports high-current MOSFETs at switching frequencies up to 500 kHz when used in resonant LLC converters. The integrated bootstrap diode saves a component in the high-side supply path, and the shutdown pin enables fast turn-off during output over-voltage or short-circuit faults detected by the controller. Tight propagation delay matching improves efficiency and reduces transformer flux imbalance in push-pull stages.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 2ED21844S06JXUMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 2ED21844S06F | 2ED2184S06F | 2ED2106S06FXUMA1 | 1ED3125MU12FXUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-14-49 (DSO-14) | PG-DSO-14-49 (DSO-14) - same | PG-DSO-14-49 (DSO-14) - same | PG-DSO-14-49 (DSO-14) - same | PG-DSO-14-49 (DSO-14) - same |
| Driver Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Single-channel (need 2 for half-bridge) |
| Blocking Voltage (Voffset) | 650 V | 650 V | 650 V | 600 V | 1200 V |
| Output Drive Current | 2.5 A sink/source (typ.) | 2.5 A | 2.5 A | 0.6 A | 5 A (single channel) |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | N/A (single channel, isolated) |
| Shutdown Pin | Yes | Yes | Yes | Yes | Yes |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | TTL/CMOS | TTL/CMOS | TTL/CMOS | TTL/CMOS |
| Operating Temperature Range | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
Ключевые отличия
- 650 V blocking voltage with 2.5 A drive current in DSO-14 (против 2ED2106S06FXUMA1)
- Integrated bootstrap diode eliminates external component (против IRS2181STRPBF (legacy family))
- Dedicated shutdown pin for fast hardware protection (против IRS2181STRPBF)
Заметки по проектированию
Place the bootstrap capacitor (typically 1 uF to 4.7 uF X7R ceramic) directly between the VB and VS pins, keeping the loop area under 5 mm x 5 mm. Estimated: at 1.5 A source current with 100 ns rise time, a 100 nH loop inductance produces 15 V of ringing that can exceed the VB-VS abs max. Tight layout minimizes VS undershoot during high-side turn-on.
Choose the bootstrap capacitor value to supply the gate charge Qg of the high-side MOSFET/IGBT at the maximum PWM duty cycle and minimum switching frequency. Estimated: Cboot = (Qg_total / delta_V) where delta_V is the allowable droop, often 0.5 V to 1 V. For a 200 nC gate charge and 0.5 V droop, Cboot >= 0.4 uF, so a 1 uF part provides 2x safety margin.
Do not exceed the 650 V rating of the high-side channel even under transient conditions. Add a TVS clamp or snubber across the half-bridge midpoint to ground if VS ringing exceeds -100 V or +650 V during switching transients. The internal negative VS transient immunity is typically -100 V, beyond which the level-shifter can latch up.
The PG-DSO-14-49 package dissipates gate-drive losses as Pdrv = VCC x Qg x fsw. Estimated: at 200 mA average supply current, the driver itself dissipates 2 mW to 4 mW, but the bootstrap supply adds 20 mW to 50 mW at 50 kHz. For most applications no heatsink is needed, but verify theta_JA in confined enclosures without forced airflow.
Route HIN and LIN as a tightly-coupled differential pair or short direct traces from the MCU/DSP, keeping them away from the HO and LO switching outputs. Estimated: capacitive coupling above 5 pF from HO/LIN can inject 1 V to 3 V of common-mode noise, potentially causing double-pulsing. Add 10 kohm pull-downs on HIN/LIN if the MCU outputs float during reset.
Информация о соответствии
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - industrial/consumer use. Halogen-free status not explicitly confirmed in the verified web data and is marked [DATA_NEEDED].
