2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
MPN: 2ED21844S06JXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.61 | $26.10 |
| 100 | $2.18 | $218.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
Drop-in alternatives for 2ED21844S06JXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet β2ED21844S06JXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge |
| Number of Drivers | 2 (high-side + low-side) |
| Input Type | Non-Inverting |
| Blocking Voltage (Voffset) | 650 V |
| Output Current (Source/Sink) | 2.5 A typical |
| Bootstrap Diode | Integrated |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails |
| Shutdown Pin | Yes |
| Negative VS Transient Immunity | -100 V typical |
| Operating Temperature Range | -40 C to +125 C |
| Package | PG-DSO-14-49 (DSO-14) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
2ED21844S06JXUMA1 Pin Configuration
| Pin 1 | VCC β Low-side and logic supply voltage (10 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side gate driver (TTL, non-inverting) |
| Pin 3 | LIN β Logic input for low-side gate driver (TTL, non-inverting) |
| Pin 4 | SD β Shutdown pin (logic low disables outputs) |
| Pin 5 | GND β Ground reference for low-side driver and logic |
| Pin 6 | LO β Low-side gate-drive output to low-side MOSFET/IGBT gate |
| Pin 7 | VS β High-side floating supply return (connected to half-bridge midpoint) |
| Pin 8 | HO β High-side gate-drive output to high-side MOSFET/IGBT gate |
| Pin 9 | VB β High-side floating supply (bootstrapped from VCC via internal diode) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | NC β Not connected (per datasheet) |
| Pin 12 | NC β Not connected (per datasheet) |
| Pin 13 | NC β Not connected (per datasheet) |
| Pin 14 | NC β Not connected (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2ED21844S06JXUMA1 is suitable for 6 applications: Industrial Motor Drives (VFD), Solar String Inverters, Uninterruptible Power Supplies (UPS), Induction Heating Cooktops, Welding Equipment (Inverter Welding Machines), Switched-Mode Power Supplies (SMPS).
Industrial Motor Drives (VFD)
The 2ED21844S06JXUMA1 is well suited for variable-frequency drives controlling 400 V and 600 V class AC induction motors and PMSMs in industrial automation. Its 650 V blocking voltage and 2.5 A drive current easily handle 600 V IGBT modules in the 10 A to 50 A range, while the integrated bootstrap diode eliminates an external component in the high-side supply. Placed between the MCU/DSP PWM outputs and the IGBT half-bridge, it provides matched propagation delays (about 200 ns) that minimize dead-time distortion and improve motor efficiency. The shutdown pin enables fast hardware-level protection on overcurrent events from the DESAT or shunt-amplifier feedback path.
Recommended
Solar String Inverters
In grid-tied solar inverters, the 2ED21844S06JXUMA1 drives the IGBT or super-junction MOSFET half-bridges in the DC-AC stage that converts 600 V to 1000 V DC bus into 230 V AC mains. Its 650 V rating covers 600 V DC bus systems with adequate margin, and the 2.5 A drive current charges and discharges MOSFET gate capacitances quickly enough to keep switching losses manageable at 20 kHz to 50 kHz PWM frequencies. The integrated bootstrap diode reduces BOM and improves long-term reliability in outdoor solar installations, where thermal cycling stresses discrete components. TTL-compatible inputs interface directly with the inverter's DSP or MCU PWM controller without level shifters.
Recommended
Uninterruptible Power Supplies (UPS)
The 2ED21844S06JXUMA1 drives the half-bridge stages in on-line and line-interactive UPS systems, where it switches the battery-inverter MOSFETs/IGBTs that produce the AC output from a 384 V DC bus. The 650 V blocking voltage gives sufficient margin above 384 V DC plus transient spikes, and the matched propagation delays reduce the risk of cross-conduction that would otherwise cause shoot-through failures in the inverter. The built-in UVLO protects the power switches from inadequate gate-drive voltage during low-battery brownout conditions, while the shutdown pin allows the MCU to disable the inverter within microseconds on fault detection.
Recommended
Induction Heating Cooktops
In residential induction cooking, the 2ED21844S06JXUMA1 drives the resonant half-bridge that excites the cooking-zone coil at 20 kHz to 100 kHz. Its 2.5 A drive current easily switches the high-current IGBTs (often 40 A to 100 A class) used in this application, while the 650 V rating supports the rectified 230 V or 400 V mains bus. The integrated bootstrap diode and shutdown pin simplify the cooktop inverter design and allow fast protective turn-off if pan-presence detection or over-temperature sensing flags a fault. Matched propagation delays keep the resonant tank in balance across both halves of the bridge.
Recommended
Welding Equipment (Inverter Welding Machines)
The 2ED21844S06JXUMA1 is used in professional inverter welding machines where the secondary current must be precisely controlled via a high-frequency switching stage. The 650 V blocking voltage handles the rectified 400 V to 540 V DC bus typical of 3-phase welding input, and the 2.5 A drive current drives large IGBT modules that switch welding currents up to 300 A. The driver's matched propagation delays and short dead-time requirement improve arc stability and reduce secondary rectification losses. The integrated bootstrap and shutdown pin provide the protection and simplicity required in this harsh industrial environment with frequent load transients.
Recommended
Switched-Mode Power Supplies (SMPS)
The 2ED21844S06JXUMA1 fits half-bridge and full-bridge SMPS topologies in telecom and server power supplies operating from a 400 V DC bus. Its 650 V blocking voltage gives adequate margin above the rectified 230 V or 380 V AC mains, and 2.5 A drive current supports high-current MOSFETs at switching frequencies up to 500 kHz when used in resonant LLC converters. The integrated bootstrap diode saves a component in the high-side supply path, and the shutdown pin enables fast turn-off during output over-voltage or short-circuit faults detected by the controller. Tight propagation delay matching improves efficiency and reduces transformer flux imbalance in push-pull stages.
Recommended
Recommended Products Summary
Engineering reference data for 2ED21844S06JXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED21844S06F | 2ED2184S06F | 2ED2106S06FXUMA1 | 1ED3125MU12FXUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-14-49 (DSO-14) | PG-DSO-14-49 (DSO-14) - same | PG-DSO-14-49 (DSO-14) - same | PG-DSO-14-49 (DSO-14) - same | PG-DSO-14-49 (DSO-14) - same |
| Driver Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Single-channel (need 2 for half-bridge) |
| Blocking Voltage (Voffset) | 650 V | 650 V | 650 V | 600 V | 1200 V |
| Output Drive Current | 2.5 A sink/source (typ.) | 2.5 A | 2.5 A | 0.6 A | 5 A (single channel) |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | N/A (single channel, isolated) |
| Shutdown Pin | Yes | Yes | Yes | Yes | Yes |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | TTL/CMOS | TTL/CMOS | TTL/CMOS | TTL/CMOS |
| Operating Temperature Range | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
| Approx. Unit Price @ 1k (USD) | 1.68 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 650 V blocking voltage with 2.5 A drive current in DSO-14 (vs 2ED2106S06FXUMA1)
- Integrated bootstrap diode eliminates external component (vs IRS2181STRPBF (legacy family))
- Dedicated shutdown pin for fast hardware protection (vs IRS2181STRPBF)
Design Notes
Place the bootstrap capacitor (typically 1 uF to 4.7 uF X7R ceramic) directly between the VB and VS pins, keeping the loop area under 5 mm x 5 mm. Estimated: at 1.5 A source current with 100 ns rise time, a 100 nH loop inductance produces 15 V of ringing that can exceed the VB-VS abs max. Tight layout minimizes VS undershoot during high-side turn-on.
Choose the bootstrap capacitor value to supply the gate charge Qg of the high-side MOSFET/IGBT at the maximum PWM duty cycle and minimum switching frequency. Estimated: Cboot = (Qg_total / delta_V) where delta_V is the allowable droop, often 0.5 V to 1 V. For a 200 nC gate charge and 0.5 V droop, Cboot >= 0.4 uF, so a 1 uF part provides 2x safety margin.
Do not exceed the 650 V rating of the high-side channel even under transient conditions. Add a TVS clamp or snubber across the half-bridge midpoint to ground if VS ringing exceeds -100 V or +650 V during switching transients. The internal negative VS transient immunity is typically -100 V, beyond which the level-shifter can latch up.
The PG-DSO-14-49 package dissipates gate-drive losses as Pdrv = VCC x Qg x fsw. Estimated: at 200 mA average supply current, the driver itself dissipates 2 mW to 4 mW, but the bootstrap supply adds 20 mW to 50 mW at 50 kHz. For most applications no heatsink is needed, but verify theta_JA in confined enclosures without forced airflow.
Route HIN and LIN as a tightly-coupled differential pair or short direct traces from the MCU/DSP, keeping them away from the HO and LO switching outputs. Estimated: capacitive coupling above 5 pF from HO/LIN can inject 1 V to 3 V of common-mode noise, potentially causing double-pulsing. Add 10 kohm pull-downs on HIN/LIN if the MCU outputs float during reset.
Compliance Information
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - industrial/consumer use. Halogen-free status not explicitly confirmed in the verified web data and is marked [DATA_NEEDED].
