IRS2181STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IRS2181STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.18 | $11.80 |
| 100 | $0.98 | $98.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.7 | $700.00 |
| 2,500 | $0.62 | $1,550.00 |
Drop-in alternatives for IRS2181STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2181SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2104STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21171STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2011STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIRS4427STRPBF
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet βNCP5106BDR2G
β Drop-Inπ Reference alternative (not in catalog)
L6384ED013TR
β Drop-Inπ Reference alternative (not in catalog)
IRS2181STRPBF Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver |
| Configuration | High-side and low-side referenced, non-inverting |
| Number of Outputs | 2 (HO, LO) |
| Offset Voltage (max) | 600 V |
| VCC Supply Voltage | 10 V to 20 V |
| VBS Bootstrap Supply Voltage | 10 V to 20 V (referenced to VS) |
| Output Source Current (typ) | 1.9 A |
| Output Sink Current (typ) | 2.3 A |
| Logic Input Compatibility | 3.3 V and 5 V logic |
| Under-Voltage Lockout (UVLO) | Present on VCC and VBS |
| Shutdown Pin (SD) | Yes, active-low compatible input stage |
| Operating Temperature Range | -40 C to +125 C (junction) |
| Package | 8-pin SOIC (SO-8, 0.154" / 3.90 mm body width) |
| Mounting Type | Surface Mount |
| Lead Finish | Pb-free (PBF suffix) |
| RoHS Compliance | Compliant (Pb-free) |
IRS2181STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side supply voltage (10 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side gate driver output (HO), non-inverting |
| Pin 3 | LIN β Logic input for low-side gate driver output (LO), non-inverting |
| Pin 4 | SD β Shutdown input - logic low disables both HO and LO outputs |
| Pin 5 | COM β Low-side return / ground reference for VCC and LO |
| Pin 6 | LO β Low-side gate drive output referenced to COM |
| Pin 7 | VS β High-side floating supply return / bootstrap capacitor negative terminal |
| Pin 8 | HO β High-side gate drive output referenced to VS |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS2181STRPBF is suitable for 6 applications: BLDC Motor Drive (24-48 V DC Bus), 230 VAC Solar Micro-Inverter, Electronic Ballast (HID / Fluorescent), Switch-Mode Power Supply with Synchronous Rectification, Induction-Heating Cooktop, Class-D Audio Amplifier Output Stage.
BLDC Motor Drive (24-48 V DC Bus)
The IRS2181STRPBF is a strong fit for 24 V to 48 V brushless DC motor half-bridge stages in SO-8 packages. Its 1.9 A source / 2.3 A sink current drives typical 40 V-100 V MOSFETs with gate charges under 50 nC in tens of nanoseconds, keeping switching losses small at 20-50 kHz PWM. Its 600 V offset rating leaves huge margin over the 48 V bus, improving robustness against inductive transients. The shutdown pin enables fast fault response for overcurrent protection, and the SO-8 footprint fits compact motor-control PCBs.
Recommended
230 VAC Solar Micro-Inverter
In a 230 VAC micro-inverter the rectified DC bus reaches approximately 325 V, well within the IRS2181STRPBF's 600 V offset rating. Its 10-20 V VCC range is compatible with standard auxiliary supplies derived from the bus, and its bootstrap driver eliminates the need for an isolated DC/DC converter to drive the upper MOSFET. With 1.9 A / 2.3 A drive current it switches IGBTs and high-voltage MOSFETs at 16-50 kHz with low loss. The 8-pin SOIC keeps the inverter PCB small and low-cost.
Recommended
Electronic Ballast (HID / Fluorescent)
For HID and fluorescent electronic ballasts the IRS2181STRPBF drives the resonant half-bridge at 30-100 kHz from a rectified 230 VAC bus (about 325 V DC). Its 600 V rating handles the bus with margin, and its matched high-side / low-side propagation delay keeps the resonant tank balanced, reducing acoustic noise and improving lamp life. The 8-pin SOIC and small footprint enable ultra-compact ballast designs where PCB area is at a premium. UVLO on VCC prevents lamp flicker at low-line brownout conditions.
Recommended
Switch-Mode Power Supply with Synchronous Rectification
In an SMPS with synchronous rectification the IRS2181STRPBF drives the synchronous-rectifier MOSFETs in a half-bridge or push-pull topology from a 12 V or 24 V input. Its 1.9 A / 2.3 A source/sink current keeps the SR MOSFETs switching fast at 100-500 kHz, reducing conduction loss. The 8-pin SOIC footprint simplifies layout on dense primary-side power boards, and the logic-compatible inputs interface directly with most PWM controller ICs. UVLO protects the SR stage during startup transients.
Recommended
Induction-Heating Cooktop
In an induction-heating cooktop the IRS2181STRPBF drives a resonant half-bridge at 20-50 kHz from a rectified 325 V DC bus. Its 600 V offset rating provides substantial margin against resonant tank overshoot and inductive kick. The high peak gate drive current (1.9 A source) enables fast switching of high-current IGBTs, which keeps switching losses low and improves cooking efficiency. The shutdown pin allows rapid disable in response to pan-detection or over-temperature faults for safety compliance.
Recommended
Class-D Audio Amplifier Output Stage
In a class-D audio amplifier the IRS2181STRPBF drives the output half-bridge MOSFETs that deliver the PWM audio signal to the LC low-pass filter and loudspeaker. Its matched channel-to-channel propagation delay preserves audio timing accuracy and reduces distortion, while 1.9 A / 2.3 A source/sink current enables 200-500 kHz switching with reasonable MOSFET sizes. UVLO prevents audible clicks during power-up and power-down sequencing. The 8-pin SOIC keeps amplifier boards compact for slim consumer products.
Recommended
Recommended Products Summary
Engineering reference data for IRS2181STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2181SPBF | IR2104STRPBF | IRS21171STRPBF | NCP5106BDR2G | L6384ED013TR |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | SOIC-8 | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Source / Sink Drive Current | 1.9 A / 2.3 A | 1.9 A / 2.3 A | 0.21 A / 0.36 A | 1.0 A / 1.0 A | 1.0 A / 1.0 A | 0.4 A / 0.65 A |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| UVLO on VCC and VBS | Yes (both rails) | Yes (both rails) | Yes (VCC only) | Yes (both rails) | Yes (both rails) | Yes (both rails) |
| Shutdown Pin (SD) | Yes | Yes | No | Yes | Yes | Yes |
| Logic Polarity | Non-inverting | Non-inverting | Inverting (HIN/SD logic) | Non-inverting | Non-inverting | Non-inverting |
| Integrated Bootstrap Diode | No | No | No | No | No | Yes |
Key Differentiators
- Higher peak drive current than the IR2104 family (vs IR2104STRPBF)
- Integrated shutdown pin for fault response (vs IRS21171STRPBF)
- Same SO-8 footprint as ON Semi NCP5106 with higher drive current (vs NCP5106BDR2G)
Design Notes
Bootstrap capacitor sizing is critical for reliable high-side operation. Use CB >= (QG_max * 2) / (VCC - UVLO_threshold - Vf_bootstrap) as a starting point. For a typical 100 nC gate charge and 1 V allowable droop on VBS, a 0.22 uF to 1 uF X7R ceramic at the VB pin is appropriate. The bootstrap diode must be an ultrafast-recovery type (trr <= 100 ns) rated for the full DC bus voltage; UF4007 or ES1J are common low-cost choices. Add a small resistor (3-10 ohm) in series with the bootstrap diode to limit inrush current during VBS recharge.
Keep the high-current gate-drive loop (HO -> gate -> source -> VS -> VB decoupling -> HO) as small as possible to minimize parasitic inductance. Place the VBS decoupling capacitor (0.1 uF to 1 uF) directly between pins 7 (VS) and 8 (HO bypass to VB) with short traces. Use a 4-layer PCB with a continuous ground plane under the driver for best EMI performance. Keep the high-side loop area below approximately 1 square centimeter to avoid ringing above 100 MHz that can radiate EMI.
Do not operate the IRS2181STRPBF above 600 V offset between VB and COM - even brief transients above this rating can permanently damage the high-side level-shifter. Always include a snubber or TVS clamp across the half-bridge to limit dv/dt-induced overshoot. Ensure that VCC does not drop below the UVLO threshold during high-side switching; if it does, the high-side output can latch in an undefined state. Finally, do not leave the SD pin floating - tie it high through a 10 kohm resistor to VCC if unused.
Compliance Information
Pb-free (PBF suffix) per Infineon product page; RoHS and REACH compliance stated by the manufacturer. Not AEC-Q100 qualified (industrial/commercial grade). Halogen-free status not explicitly stated in the verified data.
